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 Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC2578
DESCRIPTION With TO-3PN package High power dissipation High current capability APPLICATIONS For audio frequency power amplifier applications
PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION
Absolute maximum ratings(Ta=ae )
SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER

INC
Collector-base voltage
E SEM ANG H
Open base
OND IC
CONDITIONS
TOR UC
VALUE 140 100 6 7 UNIT V V V A W ae ae
Open emitter
Collector-emitter voltage
Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature
Open collector
TC=25ae
70 150 -55~150
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC2578
CHARACTERISTICS
Tj=25ae unless otherwise specified PARAMETER CONDITIONS MIN TYP. MAX UNIT
SYMBOL
V(BR)CBO
Collector-base breakdown voltage
IC=5mA; IE=0
140
V
V(BR)CEO V(BR)EBO
Collector-emitter breakdown voltage
IC=10mA ;RBE= IE=5mA; IC=0
100
V
Emitter-base breakdown voltage
6
V
ICBO
Collector cut-off current
VCB=100V; IE=0
0.1
mA
IEBO
Emitter cut-off current
VEB=4V; IC=0
0.1
mA
hFE
DC current gain
IC=3A ; VCE=4V
50
VCE(sat)
Collector-emitter saturation voltage
fT
IN
Transition frequency

IC=3A ; IB=0.3A
ANG CH
MIC E SE
IC=0.5A ; VCE=10V
DUC ON
20
TOR
2
V
MHz
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC2578

CHA IN
E SEM NG
OND IC
TOR UC
Fig.2 outline dimensions (unindicated tolerance:A
0.1mm)
3


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