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  Datasheet File OCR Text:
 Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC2577
DESCRIPTION With TO-3PN package Complement to type 2SA1102 High power dissipation High current capability APPLICATIONS Audio power amplifier DC-DC converter
PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION
Absolute maximum ratings(Ta=ae )
SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER

INC
Collector-base voltage
Collector-emitter voltage
E SEM ANG H
Open emitter Open base Open collector
CONDITIONS
OND IC
TOR UC
VALUE 120 80 6 6
UNIT V V V A W ae ae
Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature
TC=25ae
60 150 -55~150
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25ae unless otherwise specified PARAMETER CONDITIONS MIN
2SC2577
SYMBOL
TYP.
MAX
UNIT
V(BR)CEO
Collector-emitter breakdown voltage
IC=25mA ;IB=0
80
V
V(BR)CBO
Collector-base breakdown voltage
IC=1mA ;IE=0
120
V
V(BR)EBO
Emitter-base breakdown voltage
IE=1mA ;IC=0
6
V
VCEsat
Collector-emitter saturation voltage
IC=3A; IB=0.3A
1.5
V
ICBO
Collector cut-off current
VCB=120V; IE=0
100
|I
A
IEBO
Emitter cut-off current
VEB=6V; IC=0
100
|I
A
hFE
DC current gain
IC=2A ; VCE=4V
50
fT
Transition frequency

IC=0.5A ; VCE=10V
CHA IN
E SEM NG
OND IC
TOR UC
20
MHz
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC2577

CHA IN
E SEM NG
OND IC
TOR UC
Fig.2 outline dimensions (unindicated tolerance:A
0.1mm)
3


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