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N81603M KSD526Y B2012 RF2115L 06100 PA1758 HMCS424 00ETTS
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 Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC2516
DESCRIPTION With TO-220C package Low collector saturation voltage Wide area of safe operation APPLICATIONS Switching regulators DC-DC converters High frequency power amplifiers
PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION
Absolute maximum ratings(Ta=25ae )
SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER

INC
Collector-base voltage
Collector-emitter voltage
ANG H
E SEM
Open emitter Open base Open collector
CONDITIONS
OND IC
TOR UC
VALUE 150 60 12 5 10 2.5 UNIT V V V A A A
Emitter-base voltage Collector current Collector current-peak Base current
Ta=25ae PT Total power dissipation TC=25ae Tj Tstg Junction temperature Storage temperature
1.5 W 30 150 -55~150 ae ae
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25ae unless otherwise specified PARAMETER CONDITIONS MIN
2SC2516
SYMBOL
TYP.
MAX
UNIT
VCEO(SUS)
Collector-emitter sustaining voltage
IC=3.0A ; IB=0;L=1mH
60
V
VCEsat
Collector-emitter saturation voltage
IC=3A; IB=0.3A
0.6
V
VBEsat
Base-emitter saturation voltage
IC=3A; IB=0.3A
1.5
V
ICBO
Collector cut-off current
VCB=100V ;IE=0 VCE=100V; VBE=-1.5V Ta=125ae VEB=10V ;IC=0
10 10 1 10 |I
|I
A A mA
ICEX
Collector cut-off current
IEBO
Emitter cut-off current
|I
A
hFE-1
DC current gain
IC=0.2 A ; VCE=5V
hFE-2
Switching times
IN
DC current gain

IC=3 A ; VCE=5V
ton
Turn-on time
ts
Storage time
CHA
E SEM NG
OND IC
TOR UC
40 200 0.5 |I s 2.5 |I s
40
IC=3A; IB1=-IB2=0.3A RL=17| ; VCC=50V
tf
Fall time
0.5
|I
s
hFE-2 Classifications M 40-80 L 60-120 K 100-200
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC2516

CHA IN
E SEM NG
OND IC
TOR UC
Fig.2 Outline dimensions (unindicated tolerance:A
0.10 mm)
3


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