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| INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SB649A DESCRIPTION *High Collector Current-IC=-1.5A *High Collector-Emitter Breakdown Voltage: V(BR)CEO=-160V(Min) *Good Linearity of hFE *Low Saturation Voltage *Complement to Type 2SD669A APPLICATIONS *Power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VCBO VCEO VEBO IC ICP PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Pulse Collector Power Dissipation @ TC=25 PC Collector Power Dissipation @ Ta=25 TJ Tstg Junction Temperature Storage Temperature Range 1 150 -55~150 VALUE -180 -160 -5 -1.5 -3 20 W UNIT V V V A A isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SB649A TYP. MAX UNIT V(BR)CBO Collector-Base Breakdown Voltage IC= -1mA ; IE= 0 IC= -10mA ; RBE= -180 V V(BR)CEO Collector-Emitter Breakdown Voltage -160 V V(BR)EBO Emitter-Base Breakdown Vltage IE= -1mA ; IC=0 -5 V VCE(sat) Collector-Emitter Saturation Voltage IC= -500mA; IB= -50mA -1.0 V VBE(on) Base-Emitter On Voltage IC= -150mA ; VCE= -5V -1.5 V A ICBO Collector Cutoff Current VCB= -160V; IE= 0 -10 hFE-1 DC Current Gain IC= -150mA ; VCE= -5V 60 200 hFE-2 DC Current Gain IC=-500mA ; VCE= -5V 30 fT Current-Gain--Bandwidth Product IC= -150mA ; VCE= -5V 140 MHz COB Output Capacitance IE= 0; VCB= -10V,ftest= 1MHz 27 pF hFE-1 Classifications B 60-120 C 100-200 isc Websitewww.iscsemi.cn 2 |
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