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MITSUBISHI PM75B6LB060 FLAT-BASE TYPE INSULATED PACKAGE PM75B6LB060 FEATURE a) Adopting new 5th generation IGBT (CSTBT TM ) chip, which performance is improved by 1m fine rule process. For example, typical Vce(sat)=1.55V @Tj=125C b) Over-temperature protection by detecting Tj of the CSTBT TM chips and error output is possible from all each conservation upper and lower arm of IPM. c) New small package Reduce the package size by 10%, thickness by 22% from S-DASH series. * 2 75A, 600V Current-sense IGBT type inverter * 75A, 600V Current-sense Chopper IGBT * Monolithic gate drive & protection logic * Detection, protection & status indication circuits for, shortcircuit, over-temperature & under-voltage (P-Fo available from upper arm devices) * UL Recognized Yellow Card No.E80276(N) File No.E80271 APPLICATION Photo voltaic power conditioner PACKAGE OUTLINES Dimensions in mm LABEL 120 7 19.75 3.25 16 3-2 106 0.25 66.5 17 16 3-2 16 3-2 15.25 2-5.5 6-2 MOUNTING HOLES 1 16 1.5 1.5 3 44 25.75 55 N 35 1 P 5 9 13 19 44 B U V W 25 44 2.5 19.5 22 7.75 23 44 44 44 4 1 2-2.5 2. 9.5 5 23 98.25 23 Terminal code 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. VUPC UFO UP VUP1 VVPC VFO VP VVP1 NC NC 11. 12. 13. 14. 15. 16. 17. 18. 19. NC NC VNC VN1 Br UN VN WN Fo 19-0.5 11.5 27.5 9.5 Oct. 2005 MITSUBISHI PM75B6LB060 FLAT-BASE TYPE INSULATED PACKAGE INTERNAL FUNCTIONS BLOCK DIAGRAM Br FO 1.5k VNC WN VN1 VN UN NC NC NC NC VP VVP1 VVPC VFO UP VUPC UFO VUP1 1.5k 1.5k GND IN Fo Vcc GND IN Fo Vcc GND IN Fo Vcc GND IN Fo Vcc GND IN Fo Vcc GND IN Fo Vcc GND SC OT OUT GND SC OT OUT GND SC OT OUT GND SC OT OUT GND SC OT OUT GND SC OT OUT B N W V U P MAXIMUM RATINGS (Tj = 25C, unless otherwise noted) INVERTER PART Symbol VCES IC ICP PC Tj Parameter Collector-Emitter Voltage Collector Current Collector Current (Peak) Collector Dissipation Junction Temperature Condition VD = 15V, VCIN = 15V TC = 25C TC = 25C TC = 25C Ratings 600 75 150 390 -20 ~ +150 Unit V A A W C CONVERTER PART Symbol VCES IC ICP PC IF VR(DC) Tj Parameter Collector-Emitter Voltage Collector Current Collector Current (Peak) Collector Dissipation FWDi Forward Current FWDi Rated DC Reverse Voltage Junction Temperature Condition VD = 15V, VCIN = 15V TC = 25C TC = 25C TC = 25C TC = 25C TC = 25C Ratings 600 75 150 390 75 600 -20 ~ +150 Unit V A A W A V C (Note-1) CONTROL PART Symbol VD VCIN VFO IFO Parameter Supply Voltage Input Voltage Fault Output Supply Voltage Fault Output Current Condition Applied between : VUP1-VUPC VVP1-VVPC, VN1-VNC Applied between : UP-VUPC, VP-VVPC UN * VN * WN * Br-VNC Applied between : UFO-VUPC, VFO-VVPC, FO-VNC Sink current at UFO, VFO, FO terminals Ratings 20 20 20 20 Unit V V V mA Oct. 2005 MITSUBISHI PM75B6LB060 FLAT-BASE TYPE INSULATED PACKAGE TOTAL SYSTEM Parameter Supply Voltage Protected by VCC(PROT) SC VCC(surge) Supply Voltage (Surge) Storage Temperature Tstg Isolation Voltage Viso Symbol Condition VD = 13.5 ~ 16.5V, Inverter Part, Tj = +125C Start Applied between : P-N, Surge value 60Hz, Sinusoidal, Charged part to Base, AC 1 min. Ratings 450 500 -40 ~ +125 2500 Unit V V C Vrms THERMAL RESISTANCES Symbol Rth(j-c)Q Rth(j-c)F Rth(j-c)Q Rth(j-c)F Rth(j-c)F Rth(c-f) Parameter Condition Inverter IGBT part (per 1/4 module) Inverter FWDi part (per 1/4 module) Converter IGBT part Converter FWDi upper part Converter FWDi lower part Case to fin, (per 1 module) Thermal grease applied (Note-1) (Note-1) (Note-1) (Note-1) (Note-1) (Note-1) Min. -- -- -- -- -- -- Limits Typ. -- -- -- -- -- -- Max. 0.32 0.53 0.32 0.33 0.53 0.038 Unit Junction to case Thermal Resistances C/W Contact Thermal Resistance (Note-1) Tc (under the chip) measurement point is below. (unit : mm) arm axis X Y UP IGBT FWDi 31.2 33.6 4.5 -7.5 VP IGBT FWDi 66.0 66.0 0.6 -8.6 WP FWDi 85.8 -3.1 BP FWDi 22.7 7.2 UN IGBT FWDi 41.6 40.5 0.0 8.0 VN IGBT FWDi 56.2 56.2 -5.5 2.7 WN IGBT FWDi 76.3 76.3 -6.5 2.7 BN IGBT FWDi 26.1 18.7 -10.1 -9.0 Bottom view ELECTRICAL CHARACTERISTICS (Tj = 25C, unless otherwise noted) INVERTER PART Symbol VCE(sat) VEC ton trr tc(on) toff tc(off) ICES Parameter Collector-Emitter Saturation Voltage FWDi Forward Voltage Condition VD = 15V, IC = 75A VCIN = 0V (Fig. 1) -IC = 75A, VD = 15V, VCIN = 15V VD = 15V, VCIN = 0V15V VCC = 300V, IC = 75A Tj = 125C Inductive Load VCE = VCES, VCIN = 15V (Fig. 5) Tj = 25C Tj = 125C (Fig. 2) Min. -- -- -- 0.3 -- -- -- -- -- -- Limits Typ. 1.7 1.55 2.2 0.7 0.1 0.2 0.9 0.2 -- -- Max. 2.3 2.0 3.3 1.4 0.2 0.4 1.8 0.4 1 10 Unit V V Switching Time s (Fig. 3,4) Tj = 25C Tj = 125C Collector-Emitter Cutoff Current mA Oct. 2005 MITSUBISHI PM75B6LB060 FLAT-BASE TYPE INSULATED PACKAGE CONVERTER PART Symbol VCE(sat) VEC VFM ton trr tc(on) toff tc(off) ICES Parameter Collector-Emitter Saturation Voltage FWDi Forward Voltage Forward Voltage Condition VD = 15V, IC = 75A VCIN = 0V, Pulsed (Fig. 1) -IC = 75A, VCIN = 15V, VD = 15V IF = 75A VD = 15V, VCIN = 0V15V VCC = 300V, IC = 75A Tj = 125C Inductive Load VCE = VCES, VD = 15V (Fig. 5) Tj = 25C Tj = 125C (Fig. 2) Min. -- -- -- -- 0.3 -- -- -- -- -- -- Limits Typ. 1.7 1.55 2.2 1.9 0.7 0.1 0.2 0.9 0.2 -- -- Max. 2.3 2.0 3.3 3.0 1.4 0.2 0.4 1.8 0.4 1 10 Unit V V V Switching Time s (Fig. 3,4) Tj = 25C Tj = 125C Collector-Emitter Cutoff Current mA CONTROL PART Symbol ID Vth(ON) Vth(OFF) SC toff(SC) OT OTr UV UVr IFO(H) IFO(L) tFO Parameter Circuit Current Input ON Threshold Voltage Input OFF Threshold Voltage Short Circuit Trip Level Short Circuit Current Delay Time Over Temperature Protection Supply Circuit Under-Voltage Protection Fault Output Current Minimum Fault Output Pulse Width VD = 15V, VCIN = 15V Applied between : UP-VUPC, VP-VVPC UN * VN * WN * Br-VNC -20 Tj 125C, VD = 15V (Fig. 3,6) VD = 15V VD = 15V Detect Tj of IGBT chip -20 Tj 125C VD = 15V, VFO = 15V VD = 15V Inverter part Converter part (Fig. 3,6) Trip level Reset level Trip level Reset level (Note-2) (Note-2) Condition VN1-VNC V*P1-V*PC Min. -- -- 1.2 1.7 150 150 -- 135 -- 11.5 -- -- -- 1.0 Limits Typ. 24 6 1.5 2.0 -- -- 0.2 145 125 12.0 12.5 -- 10 1.8 Max. 34 12 1.8 2.3 -- -- -- -- -- 12.5 -- 0.01 15 -- Unit mA V A s C V mA ms (Note-2) Fault output is given only when the internal SC, OT & UV protections schemes of either upper or lower arm device operate to protect it. MECHANICAL RATINGS AND CHARACTERISTICS Symbol -- -- Parameter Mounting torque Weight Mounting part -- Condition screw : M5 Min. 2.5 -- Limits Typ. 3.0 340 Max. 3.5 -- Unit N*m g RECOMMENDED CONDITIONS FOR USE Symbol VCC VD VCIN(ON) VCIN(OFF) fPWM tdead Parameter Supply Voltage Control Supply Voltage Input ON Voltage Input OFF Voltage PWM Input Frequency Arm Shoot-through Blocking Time Condition Applied across P-N terminals Applied between : VUP1-VUPC, VVP1-VVPC VN1-VNC Applied between : UP-VUPC, VP-VVPC UN * VN * WN * Br-VNC Using Application Circuit of Fig. 8 For IPM's each input signals (Fig. 7) Recommended value 450 (Note-3) 15 1.5 0.8 9.0 20 2.0 Unit V V V kHz s (Note-3) With ripple satisfying the following conditions : dv/dt swing 5V/s, Variation 2V peak to peak Oct. 2005 MITSUBISHI PM75B6LB060 FLAT-BASE TYPE INSULATED PACKAGE PRECAUTIONS FOR TESTING 1. Before appling any control supply voltage (VD), the input terminals should be pulled up by resistores, etc. to their corresponding supply voltage and each input signal should be kept off state. After this, the specified ON and OFF level setting for each input signal should be done. 2. When performing "SC" tests, the turn-off surge voltage spike at the corresponding protection operation should not be allowed to rise above VCES rating of the device. (These test should not be done by using a curve tracer or its equivalent.) P, (U,V,W,B) IN Fo IN Fo P, (U,V,W,B) VCIN (0V) V Ic VCIN (15V) V -Ic VD (all) U,V, (N) VD (all) U,V,W,B, (N) Fig. 1 VCE(sat) Test Fig. 2 VEC, (VFM) Test a) Lower Arm Switching P VCIN (15V) VCIN Signal input (Upper Arm) Signal input (Lower Arm) Fo Fo U,V,W,B trr Irr CS VCE Ic 90% Vcc 90% N b) Upper Arm Switching VCIN Signal input (Upper Arm) Signal input (Lower Arm) VD (all) P Ic 10% 10% tc(on) 10% tc(off) 10% Fo U,V VCIN CS Vcc td(on) tr td(off) tf VCIN (15V) Fo (ton= td(on) + tr) N (toff= td(off) + tf) VD (all) Ic Fig. 3 Switching Time and SC Test Circuit Fig. 4 Switching Time Test Waveform VCIN Short Circuit Current P, (U,V,W,B) A IN Fo Constant Current SC Trip Pulse VCE VCIN (15V) Ic VD (all) U,V,W,B, (N) Fo toff(SC) Fig. 5 ICES Test Fig. 6 SC Test Waveform IPM' input signal VCIN (Upper Arm) 0V IPM' input signal VCIN (Lower Arm) 1.5V 2V 1.5V t 0V 2V 1.5V 2V t tdead tdead tdead 1.5V: Input on threshold voltage Vth(on) typical value, 2V: Input off threshold voltage Vth(off) typical value Fig. 7 Dead Time Measurement Point Example Oct. 2005 MITSUBISHI PM75B6LB060 FLAT-BASE TYPE INSULATED PACKAGE 20k VUP1 UFO 1.5k UP P Vcc Fo IN OUT OT SC U IF 0.1 10 VUPC GND GND 20k VVP1 VFO 1.5k VP IF 0.1 10 Vcc Fo IN OUT OT SC V ~ AC Output VVPC NC NC NC NC GND GND W 20k IF UN 0.1 10 Vcc Fo IN OUT OT SC N GND GND 20k IF VN 0.1 10 Vcc Fo IN OUT OT SC GND GND 20k VN1 IF WN 0.1 10 Vcc Fo IN OUT OT SC VNC GND GND B Vcc OUT OT SC 20k IF 0.1 10 FO 1.5k Br Fo IN GND GND Fig. 8 Application Example Circuit NOTES FOR STABLE AND SAFE OPERATION ; Design the PCB pattern to minimize wiring length between opto-coupler and IPM's input terminal, and also to minimize the stray capacity between the input and output wirings of opto-coupler. Connect low impedance capacitor between the Vcc and GND terminal of each fast switching opto-coupler. Fast switching opto-couplers: tPLH, tPHL 0.8s, Use High CMR type. Slow switching opto-coupler: CTR > 100% Use 3 isolated control power supplies (VD). Also, care should be taken to minimize the instantaneous voltage charge of the power supply. Make inductance of DC bus line as small as possible, and minimize surge voltage using snubber capacitor between P and N terminal. * * * * * * Oct. 2005 MITSUBISHI PM75B6LB060 FLAT-BASE TYPE INSULATED PACKAGE PERFORMANCE CURVES (INVERTER PART) OUTPUT CHARACTERISTICS (TYPICAL) Tj = 25C 15V VD = 17V 13V COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) COLLECTOR-EMITTER SATURATION VOLTAGE (VS. Ic) CHARACTERISTICS (TYPICAL) 2 VD = 15V 100 COLLECTOR CURRENT IC (A) 80 1.5 60 1 40 20 0.5 Tj = 25C Tj = 125C 0 0 20 40 60 80 100 0 0 0.5 1 1.5 2 COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) COLLECTOR-EMITTER SATURATION VOLTAGE (VS. VD) CHARACTERISTICS (TYPICAL) 2 SWITCHING TIME tc(on), tc(off) (s) SWITCHING TIME CHARACTERISTICS (TYPICAL) 100 7 5 3 2 1.5 tc(off) tc(on) tc(off) 1 10-1 7 5 3 0.5 IC = 75A Tj = 25C Tj = 125C 0 12 13 14 15 16 17 18 10-2 0 10 VCC = 300V VD = 15V Tj = 25C 2 Tj = 125C Inductive load 2 3 5 7 101 2 3 5 7 102 CONTROL SUPPLY VOLTAGE VD (V) COLLECTOR CURRENT IC (A) 101 SWITCHING TIME ton, toff (s) 7 5 3 2 SWITCHING LOSS ESW(on), ESW(off) (mJ/Pulse) SWITCHING TIME CHARACTERISTICS (TYPICAL) VCC = 300V VD = 15V Tj = 25C Tj = 125C Inductive load SWITCHING LOSS CHARACTERISTICS (TYPICAL) 101 7 5 3 2 100 7 5 VCC = 300V VD = 15V Tj = 25C Tj = 125C Inductive load ESW(on) 100 7 5 3 2 toff ton ton 3 ESW(on) 2 ESW(off) 10-1 7 5 3 2 toff ESW(off) 10-1 0 10 2 3 5 7 101 2 3 5 7 102 10-2 0 10 2 3 5 7 101 2 3 5 7 102 COLLECTOR CURRENT IC (A) COLLECTOR CURRENT IC (A) Oct. 2005 MITSUBISHI PM75B6LB060 FLAT-BASE TYPE INSULATED PACKAGE COLLECTOR REVERSE CURRENT -IC (A) 7 5 3 2 7 5 3 2 7 5 3 2 100 7 5 3 2 Irr 101 7 5 3 2 VCC = 300V VD = 15V Tj = 25C Tj = 125C Inductive load 101 7 5 3 2 10-1 7 5 3 2 trr 100 7 5 3 2 Tj = 25C Tj = 125C 0 0.5 1 1.5 2 2.5 100 10-2 0 10 2 3 5 7 101 2 3 5 7 102 10-1 EMITTER-COLLECTOR VOLTAGE VEC (V) COLLECTOR CURRENT IC (A) REVERSE RECOVERY LOSS Err (mJ/Pulse) FWDi REVERSE RECOVERY LOSS CHARACTERISTICS (TYPICAL) 101 7 VCC = 300V 5 VD = 15V 3 Tj = 25C 2 Tj = 125C 100 Inductive load 7 5 3 2 10-1 7 5 3 2 Err 10-2 0 10 2 3 5 7 101 2 3 5 7 102 COLLECTOR REVERSE CURRENT -IC (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT PART) 100 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi PART) 100 NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j - c) 3 2 NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j - c) 7 5 7 5 3 2 10-1 7 5 3 2 10-1 7 5 3 2 10-2 Per unit base = Rth(j - c)Q = 0.32C/ W 10-3 -5 10 2 3 5 710-4 2 3 5 710-3 2 3 5 710-2 2 3 5 710-1 2 3 5 7100 2 3 5 7101 TIME (s) 7 5 3 Single Pulse 2 10-2 Per unit base = Rth(j - c)F = 0.53C/ W 10-3 -5 10 2 3 5 710-4 2 3 5 710-3 2 3 5 710-2 2 3 5 710-1 2 3 5 7100 2 3 5 7101 TIME (s) 7 5 3 Single Pulse 2 REVERSE RECOVERY CURRENT lrr (A) Oct. 2005 REVERSE RECOVERY TIME trr (s) FWDi FORWARD VOLTAGE CHARACTERISTICS (TYPICAL) 102 VD = 15V FWDi REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 101 102 MITSUBISHI PM75B6LB060 FLAT-BASE TYPE INSULATED PACKAGE (CONVERTER PART) OUTPUT CHARACTERISTICS (TYPICAL) Tj = 25C 15V VD = 17V 13V COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) COLLECTOR-EMITTER SATURATION VOLTAGE (VS. Ic) CHARACTERISTICS (TYPICAL) 2 VD = 15V 100 COLLECTOR CURRENT IC (A) 80 1.5 60 1 40 20 0.5 Tj = 25C Tj = 125C 0 0 20 40 60 80 100 0 0 0.5 1 1.5 2 COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) COLLECTOR-EMITTER SATURATION VOLTAGE (VS. VD) CHARACTERISTICS (TYPICAL) 2 SWITCHING TIME tc(on), tc(off) (s) SWITCHING TIME CHARACTERISTICS (Lower Arm * TYPICAL) 100 7 5 3 2 1.5 tc(off) tc(on) 10-1 tc(off) VCC = 300V 3 VD = 15V Tj = 25C 2 Tj = 125C Inductive load 10-2 0 10 23 5 7 101 7 5 1 0.5 IC = 75A Tj = 25C Tj = 125C 0 12 13 14 15 16 17 18 2 3 5 7 102 CONTROL SUPPLY VOLTAGE VD (V) COLLECTOR CURRENT IC (A) 101 SWITCHING TIME ton, toff (s) 7 5 3 2 SWITCHING LOSS ESW(on), ESW(off) (mJ/Pulse) SWITCHING TIME CHARACTERISTICS (Lower Arm * TYPICAL) VCC = 300V VD = 15V Tj = 25C Tj = 125C Inductive load SWITCHING LOSS CHARACTERISTICS (Lower Arm * TYPICAL) 101 7 5 3 2 100 7 5 3 2 VCC = 300V VD = 15V Tj = 25C Tj = 125C Inductive load ESW(on) 100 7 5 3 2 toff ton toff ton ESW(on) ESW(off) 10-1 7 5 3 2 ESW(off) 2 3 5 7 101 2 3 5 7 102 10-1 0 10 2 3 5 7 101 2 3 5 7 102 10-2 0 10 COLLECTOR CURRENT IC (A) COLLECTOR CURRENT IC (A) Oct. 2005 MITSUBISHI PM75B6LB060 FLAT-BASE TYPE INSULATED PACKAGE FWDi FORWARD CURRENT IF (A) 7 5 3 2 7 5 3 2 7 5 3 2 100 7 5 3 2 Irr 101 7 5 3 2 trr VCC = 300V VD = 15V Tj = 25C Tj = 125C Inductive load 101 7 5 3 2 10-1 7 5 3 2 100 7 5 3 2 2 3 5 7 101 2 3 5 7 102 Tj = 25C Tj = 125C 0 0.5 1 1.5 2 2.5 100 10-2 0 10 10-1 FWDi FORWARD VOLTAGE VFM (V) FWDi FORWARD CURRENT IF (A) REVERSE RECOVERY LOSS Err (mJ/Pulse) NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j - c) FWDi REVERSE RECOVERY LOSS CHARACTERISTICS (Upper Arm * TYPICAL) 101 7 VCC = 300V 5 VD = 15V 3 Tj = 25C 2 Tj = 125C 100 Inductive load 7 5 3 2 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT PART) 100 7 5 3 2 10-1 7 5 3 2 10-1 7 5 3 2 10-2 Err 10-2 0 10 2 3 5 7 101 2 3 5 7 102 Per unit base = Rth(j - c)Q = 0.32C/W 10-3 -5 10 2 3 5 710-4 2 3 5 710-3 2 3 5 710-2 2 3 5 710-1 2 3 5 7100 2 3 5 7101 TIME (s) 7 5 3 Single Pulse 2 FWDi FORWARD CURRENT IF (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi PART * Upper Arm) 100 NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j - c) 3 2 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi PART * Lower Arm) 100 NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j - c) 7 5 3 2 7 5 10-1 7 5 3 2 10-1 7 5 3 2 10-2 Per unit base = Rth(j - c)F = 0.33C/W 10-3 -5 10 2 3 5 710-4 2 3 5 710-3 2 3 5 710-2 2 3 5 710-1 2 3 5 7100 2 3 5 7101 TIME (s) 7 5 3 Single Pulse 2 10-2 Per unit base = Rth(j - c)F = 0.53C/W 10-3 -5 10 2 3 5 710-4 2 3 5 710-3 2 3 5 710-2 2 3 5 710-1 2 3 5 7100 2 3 5 7101 TIME (s) 7 5 3 Single Pulse 2 REVERSE RECOVERY CURRENT lrr (A) REVERSE RECOVERY TIME trr (s) FWDi FORWARD VOLTAGE CHARACTERISTICS (Upper Arm * TYPICAL) 102 VD = 15V FWDi REVERSE RECOVERY CHARACTERISTICS (Upper Arm * TYPICAL) 101 102 Oct. 2005 |
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