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| The innovative Semiconductor Company! HVV1011-300 HigH Voltage, HigH Ruggedness TM L-Band Avionics Pulsed Power Transistor 1030/1090 MHz, 50s Pulse, 5% Duty For TCAS, IFF and Mode-S Applications FeatuRes * Silicon MOSFET Technology * Operation from 24V to 50V * High Power Gain * Extreme Ruggedness * Internal Input and Output Matching * Excellent Thermal Stability * All Gold Bonding Scheme tYPiCal PeRFoRManCe High voltage vertical technology is well suited for high power pulsed applications in the L-Band including IFF, TCAS and Mode-S applications. MODE Class AB FREQUENCY (MHz) VDD (V) IDQ (mA) Power (W) GAIN (dB) (%) IRL (dB) VSWR 20:1 1400 50 100 120 20 45 -8 Table 1: Typical RF Performance in broadband text fixture at 25C temperature with RF pulse conditions of pulse width = 50s and pulse period = 1ms. desCRiPtion The high power HVV1011-300 device is an enhancement mode RF MOSFET power transistor designed for pulsed applications in the L-Band from 1030MHz to 1090MHz. The high voltage HVVFETTM technology produces over 300W of pulsed output power while offering high gain, high efficiency, and ease of matching with a 50 V supply. The vertical device structure assures high reliability and ruggedness as the device is specified to withstand a 20:1 VSWR at all phase angles under full rated output power. oRdeRing inFoRMation Device Part Number: HVV1011-300 Demo Kit Part Number: HVV1011-300-EK Available through Richardson Electronics (http://rfwireless.rell.com/) HVVi Semiconductors, Inc. 10235 S. 51st St. Suite 100 Phoenix, AZ. 85044 ISO 9001:2000 Certified Tel: (866) 429-HVVi (4884) or visit www.hvvi.com (c) 2008 HVVi Semiconductors, Inc. All Rights Reserved. EG-01-DS02A 12/11/08 1 The innovative Semiconductor Company! HVV1011-300 High Voltage, High Ruggedness HVV1011-300 High Voltage, High Ruggedness L-Band Avionics Pulsed Power Transistor HVV1011-300 L-Band Avionics Pulsed Power Transistor HigH Voltage, HigH Ruggedness 1030/1090 MHz, 50s Pulse, 5% Duty 1030/1090 MHz, 50s Pulse,Applications Pulsed Power Transistor 5% Duty For TCAS, IFF and Mode-S L-Band Avionics For TCAS, IFF and Mode-S Applications 50s Pulse, 5% Duty 1030/1090 MHz, TM The innovative Semiconductor Company! The innovative Semiconductor Company! Symbol Symbol Symbol VBR(DSS) VBR(DSS) IDSS VBR(DSS) IDSS GSS IDSS IGSS GP1 IGSS GP1 1 IRL GP1 IRL1 D1 IRL1 D1 VGS(Q)2 D1 VGS(Q)2 VTH VGS(Q)2 VTH VTH ELECTRICAL CHARACTERISTICS ELECTRICAL CHARACTERISTICS eleCtRiCal CHaRaCteRistiCs Drain-Source Breakdown Drain Leakage Current Drain-Source Breakdown Drain Leakage Current Gate Leakage Current Drain Leakage Current Gate Leakage Current Power Gain Gate LeakageLoss Power Return Current Input Gain Power Return Loss Input Gain Drain Efficiency Input Return Loss Drain Quiescent Voltage Gate Efficiency Drain Quiescent Voltage Gate Efficiency Threshold Voltage Gate Quiescent Voltage Threshold Voltage Threshold Voltage For TCAS, IFF and Mode-S Applications Conditions Parameter Breakdown Parameter Drain-Source Parameter VGS=0V,ID=5mA VGS=0V,VDS=50V VGS=0V,ID=5mA VGS=0V,VDS=50V VGS=5V,VDS=0V VGS=0V,VDS=50V VGS=5V,VDS=0V F=1090MHz VGS=5V,VDS=0V F=1090MHz F=1090MHz F=1090MHz F=1090MHz F=1090MHz VDD=50V,IDQ=100mA F=1090MHz VDD=50V,IDQ=100mA VDD=5V, ID=300A VDD=50V,IDQ=100mA VDD=5V, ID=300A VDD=5V, ID=300A Conditions Conditions VGS=0V,ID=5mA Min 95 16 43 1.1 0.7 Min Typical Typical Typical Max Min 95 102 95102 102 50 50 1 200 50 1 16 18 16 1 18 -12 5 18 -12 48 50.5 48-12 50.5-8 1.1 1.45 1.1 45 1.45 0.7 1.2 1.45 0.7 1.21.8 1.2 1.7 Max Unit Unit Unit Max V V 200 V A 200 5 A A 5 A dB -8 A dB -8 dB dB % 1.8 dB % V 1.8 % V 1.7 1.7 V V V PULSE CHARACTERISTICS PULSE CHaRaCteRistiCs Pulse CHARACTERISTICS Symbol Parameter Symbol Parameter Symbol Parameter tr1 Rise Time Rise Time Tr1 tr1 Rise Time Fall Time f Fall Time Fall Time tf111 PD Pulse Droop Tf PD1 Pulse Droop PD1 Pulse Droop Conditions F=1090MHz F=1090MHz F=1090MHz F=1090MHz F=1090MHz F=1090MHz F=1090MHz Conditions Conditions Typical MinMin Typical Max Min ---Typical <35 <35 <35 50 <15 <15 <15 50 0.3 0.3 0.3 0.5 Max Units Unit Max Units 50 nS nS nS 50 nS nS 50 0.5 dB 0.5 dB dB THERMAL PERFORMANCE THERMAL PeRFoRManCe tHeRMal PERFORMANCE Symbol Symbol JC1 JC1 Parameter Parameter Thermal Resistance Thermal Resistance Max Max 0.20 0.20 Unit Unit C/W C/W RUGGEDNESS PERFORMANCE RUGGEDNESS PERFORMANCE Ruggedness PeRFoRManCe Symbol LMT1 Symbol LMT1 Parameter Load Parameter Mismatch Load Tolerance Mismatch Tolerance Test Condition F = Condition Test 1090 MHz F = 1090 MHz Max 20:1 Max 20:1 Units VSWR Units VSWR The HVV1011-300 device is capable of withstanding an output load mismatch The HVV1011-300 device is at rated an withstanding nominal operating voltage TheHVV1011-300 device 20:1 VSWR capable of output load mismatch corresponding to amismatch corresponding to a is capable of withstanding output power andan output load 20:1 VSWR corresponding to a 20:1 VSWR at rated output the frequency band of operation. at rated the frequency band operating voltage acrossoutput power and nominalof operation. across power and nominal operating voltage across the frequency band of operation. NOTE: : All parameters measured under pulsed conditions at 275W output power measured at the 10% 1.) NOTE: All parameters measured under cycle = conditions at 275W = 100mA in a broadpoint of the pulse with pulse width = 50sec, dutypulsed5% and VDD = 50V, IDQoutput power 1.) NOTE: All the 10% point of the pulse with pulseconditions at 275W output power measured at parameters measured under pulsed width = 50sec, duty cycle = 5% band matched test fixture. measured at theIDQ =point of the pulse with pulse width = 50sec, duty cycle = 5% 10% 100mA in a broadband matched test fixture. 2 and VDD = 50V, NOTE: Amount of gate voltage requiredbroadband matched test current. and VDD = 50V, IDQ = 100mA in a to attain nominal quiescent fixture. 1 2.) NOTE: Amount of gate voltage required to attain nominal quiescent current. 2.) NOTE: Amount of gate voltage required to attain nominal quiescent current. HVVi Semiconductors, Inc. HVVi Semiconductors, Inc. 10235 51st St. Suite 100 HVVi Semiconductors, Inc. 10235 S.S. 51st St. Suite 100 Phoenix, AZ. 85044 10235 S. 51st St. Suite 100 Phoenix, Az. 85044 Phoenix, Az. 85044 ISO 9001:2000 Certified ISO 9001:2000 Certified Tel: (866) 429-HVVi (4884) or Certified ISO 9001:2000 visit www.hvvi.com Tel: (866) 429-HVVi (4884) or visit www.hvvi.com (c) 2008 (866) Semiconductors, Inc.visitAll Rights Reserved. Tel: HVVi 429-HVVi (4884) or All www.hvvi.com (c) 2008 HVVi Semiconductors, Inc. Rights Reserved. (c) 2008 HVVi Semiconductors, Inc. All Rights Reserved. EG-01-DS02A EG-01-DS02A 12/11/08 EG-01-DS02A 12/12/08 22 12/12/08 2 The innovative Semiconductor Company! HVV1011-300 High Voltage,HVV1011-300 HigH Voltage, HigH Ruggedness High Ruggedness L-Band Avionics Pulsed Power Transistor L-Band Avionics Pulsed Power Transistor 1030/1090 MHz, 50s Pulse, 5% Duty MHz, 50s Pulse, 5% Duty 1030/1090 For TCAS, IFF and Mode-S Applications and Mode-S Applications For TCAS, IFF TM Zo = 10 ZIN* 1030MHz The innovative Semiconductor Company! ZOUT* 1030MHz HVVi Semiconductors, Inc. 10235 S. 51st St. Suite 100 HVVi Semiconductors, Inc. Phoenix, Az. 85044 10235 S. 51st St. Suite 100 Phoenix, AZ. 85044 Tel: (866) 429-HVVi (4884) or visit www.hvvi.com (c) 2008 HVVi Semiconductors, Inc. All Rights Reserved. ISO 9001:2000 Certified Tel: (866) 429-HVVi (4884) or visit www.hvvi.com ISO 9001:2000 Certified (c) 2008 HVVi Semiconductors, Inc. All Rights Reserved. EG-01-DS02A 12/12/08 EG-01-DS02A 3 12/11/08 3 HVV1011-300 High Voltage, High Ruggedness L-Band Avionics Pulsed Power Transistor 1030/1090 MHz, 50s Pulse, 5% Duty The innovative Semiconductor Company! For TCAS, IFF and Mode-S Applications TM HVV1011-300 HigH Voltage, HigH Ruggedness HVV1011-300 High Voltage, High Ruggedness L-Band Avionics L-Band Avionics Pulsed Power Transistor Pulsed Power Transistor 1030/1090 1030/1090 MHz, 50s Pulse, 5% DutyMHz, 50s Pulse, 5% Duty For TCAS, IFF and For TCAS, IFF and Mode-S Applications Mode-S Applications The innovative Semiconductor Company! Demonstration Board Outline Demonstration Picture Demonstration Board Outline Demonstration Circuit Board Picture Demonstration Board Outline Demonstration Circuit Board Circuit Board Picture (AutoCAD Files for Demonstration Board available online at www.hvvi.com/products) (AutoCAD Files for Demonstration Boardavailable online at www.hvvi.com/products) (AutoCAD Files for Demonstration Board available online at www.hvvi.com/products) The innovative Semiconductor Company! HVV1011-300 Demonstration Circuit Board Bill of Materials HVVi Semiconductors, Inc. 10235 S. 51st St. Suite 100 Phoenix, Az. 85044 HVV1011-300 Demonstration Circuit Board Bill of Materials HVV1011-300 Demonstration Circuit Board Bill of Materials ISO 9001:2000 Certified Tel: (866) 429-HVVi (4884) or visit www.hvvi.com (c) 2008 HVVi Semiconductors, Inc. All Rights Reserved. ISO 9001:2000 Certified Tel: (866) 429-HVVi (4884) or visit www.hvvi.com (c) 2008 HVVi Semiconductors, Inc. All Rights Reserved. EG-01-DS02A 12/12/08 4 HVVi Semiconductors, Inc. 10235 S. 51st St. Suite 100 HVVi Semiconductors, Inc. 10235 S. 51st St. Suite 100 Phoenix, AZ. 85044 ISO 9001:2000 Certified Tel: (866) 429-HVVi (4884) or visit www.hvvi.com EG-01-DS02A 12/11/08 4 EG-01-DS02A 12/12/08 The innovative Semiconductor Company! HVV1011-300 High Voltage, High Ruggedness L-Band Avionics Pulsed Power Transistor L-Band Avionics Pulsed Power Transistor 50s Pulse, 5% Duty 1030/1090 MHz, 1030/1090 MHz, 50s Pulse, For TCAS, IFF and Mode-S Applications 5% Duty For TCAS, IFF and Mode-S Applications TM HVV1011-300 HigH Voltage, HigH Ruggedness PaCKage diMensions PACKAGE DIMENSIONS DRAIN GATE SOURCE The innovative Semiconductor Company! Note: Drawing is not actual size. Note: Drawing is not actual size. HVVi Semiconductors, Inc. (HVVi) reserves the right to make changes to information published in this document at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Information in this document is believed to be accurate and reliable. However, HVVi does not give any representations or warranties, either express or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Use of HVVi products as critical components in life support systems is not authorized. No licenses, either express or implied, are conveyed under any Semiconductors, property rights, including to make changes to The HVVi published logo HVVi HVVi intellectualInc. (HVVi) reserves the right any patent rights. informationname andin this are document at any time and without notice. Inc. document supersedes and replaces all information trademarks of HVVi Semiconductors, This supplied prior to the publication hereof. Information in this document is believed to be accurate and reliable. However, HVVi does not give any representations or warranties, either express or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Use of HVVi products as critical components in life support systems is not authorized. No licenses, either express or implied, are conveyed under any HVVi intellectual property rights, including any patent rights. The HVVi name and logo are trademarks of HVVi Semiconductors, Inc. HVVi Semiconductors, Inc. 10235 S. 51st St. Suite 100 Phoenix, AZ. 85044 HVVi Semiconductors, Inc. ISO 9001:2000 Certified Tel: (866) 429-HVVi (4884) or visit www.hvvi.com (c) 2008 HVVi Semiconductors, Inc. All Rights Reserved. ISO 9001:2000 Certified 10235 S. 51st St. Suite 100 Phoenix, Az. 85044 Tel: (866) 429-HVVi (4884) or visit www.hvvi.com (c) 2008 HVVi Semiconductors, Inc. All Rights Reserved. EG-01-DS02A 12/11/08 EG-01-DS02A5 12/12/08 5 |
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