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| BZX55C Series Zener diode Features 1.High reliability Voltage Range 2.4 to 75 Volts DO-35 Applications Voltage stabilization 1.02(26.0) MIN .079(2.0) MAX .165(4.2) MAX Construction Silicon epitaxial planer Absoluto Maximum Ratings 0 Tj=25 C .020(.52) TYP 1.02(26.0) MIN Dimensions in inches and (millimeters) Parameter Power dissipation Z-current Junction temperature Storage temperature range Test Conditions I=4mm TL*25 C 0 Type Symbol PD lz Tj Tstg Value 500 PD/Vz 175 -65~+175 Unit mW mA 0C 0C Maximum Thermal Resistance Tj=250C Parameter Junction ambient Test Condltions I=4mm TL=constant Symbol RthJA Value 500 Unit K/W Electrcal Characteristics Tj=250C Parameter Forward voltage Test Conditions lF=200mA Type Symbol VF Min Typ Max 1.5 Unit V Type BZX55C 2V4 2V7 3V0 3V3 3V6 3V9 4V3 4V7 5V1 5V6 6V2 6V8 7V5 8V2 9V1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 43 47 51 56 62 68 75 Vznom V 2.4 2.7 3.0 3.3 3.6 3.9 4.3 4.7 5.1 5.6 6.2 6.8 7.5 8.2 9.1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 43 47 51 56 62 68 75 lzt for Vzr and mA V 5 2.28~2.56 5 2.5~2.9 5 2.8~3.2 5 3.1~3.5 5 3.4~3.8 5 3.7~4.1 5 4.0~4.6 5 4.4~5.0 5 4.8~5.4 5 5.2~6.0 5 5.8~6.6 5 6.4~7.2 5 7.0~7.9 5 7.7~8.7 5 8.5~9.6 5 9.4~10.6 5 10.4~11.6 5 11.4~12.7 5 12.4~14.1 5 13.8~15.6 5 15.3~17.1 5 16.8~19.1 5 18.8~21.2 5 20.8~23.3 5 22.8~25.6 5 25.1~28.9 5 28~32 5 31~35 5 34~38 2.5 37~41 2.5 40~46 2.5 44~50 2.5 48~54 2.5 52~60 2.5 58~66 2.5 64~72 2.5 70~79 r * <85 <85 <85 <85 <85 <85 <75 <60 <35 <25 <10 <8 <7 <7 <10 <15 <20 <20 <26 <30 <40 <50 <55 <55 <80 <80 <80 <80 <80 <90 <90 <110 <125 <135 <150 <200 <250 rzk at * <600 <600 <600 <600 <600 <600 <600 <600 <550 <450 <200 <150 <50 <50 <50 <70 <70 <90 <110 <110 <170 <170 <220 <220 <220 <220 <220 <220 <220 <500 <600 <700 <700 <1000 <1000 <1000 <1500 lzk mA 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 lR at uA <50 <10 <4 <2 <2 <2 <1 <0.5 <0.1 <0.1 <0.1 <0.1 <0.1 <0.1 <0.1 <0.1 <0.1 <0.1 <0.1 <0.1 <0.1 <0.1 <0.1 <0.1 <0.1 <0.1 <0.1 <0.1 <0.1 <0.1 <0.1 <0.1 <0.1 <0.1 <0.1 <0.1 <0.1 VR V 1 1 1 1 1 1 1 1 1 1 2 3 5 6.2 6.8 7.5 8.2 9.1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 43 47 51 56 TKvz %/k -0.09~-0.06 -0.09~-0.06 -0.08~-0.05 -0.08~-0.05 -0.08~-0.05 -0.08~-0.05 -0.06~-0.03 -0.05~+0.02 -0.02~+0.02 -0.05~+0.05 0.03~0.06 0.03~0.07 0.03~0.07 0.03~0.08 0.03~0.09 0.03~0.1 0.03~0.11 0.03~0.11 0.03~0.11 0.03~0.11 0.03~0.11 0.03~0.11 0.03~0.11 0.04~0.12 0.04~0.12 0.04~0.12 0.04~0.12 0.04~0.12 0.04~0.12 0.04~0.12 0.04~0.12 0.04~0.12 0.04~0.12 0.04~0.12 0.04~0.12 0.04~0.12 0.04~0.12 1)Tighter tolerances available request: BZX55A...*1% of Vznom BZ55B...*2% of Vznom 2)at Tj=1500C BZX55C Series Characteristics (Tj=250C unless otherwise specified) 600 1000 500 Ptot-Total Dissipation (mW) *Vz-Voltage Change (mV) Tj=25 C o 400 100 300 Iz=5mA 200 10 100 0 0 40 80 120 160 0 1 200 0 5 10 15 20 25 Tamb-Ambient Temperature Temperature ( C) Figure 1.Total Power Dissipation vs. Ambient Temperature 1.3 Vzm=Vz/Vz(25 C) 0 Vz-Z-Voltage (V) Figure 2. Typical Change of Working Voltage under Operating Conditions at Tamb=25-C 15 1.2 Vzm-Relative Voltage Change TKvz=10x10 /K 8x10 /K -4 -4 -4 TKvz-Temperature Coefficient of Vz(10 /K) 10 1.1 6x10 /K 4x10 /K 2x10 /K -4 -4 -4 5 Iz=5mA 1.0 0 -2x10 /K -4x10 /K -4 -4 0 0.9 0.8 -60 0 60 120 180 0 -5 240 0 10 20 30 40 50 Tj-Junction Temperature Temperature ( C) Figure 3.Typical of Working Voltage vs. Junction Temperature Vz-Z-Voltage (V) Figure 4. Temperature Conefficient of Vz vs. Z-Volltage 200 150 CD-Diode Capacitance (pF) VR=2V 0 Tj=25 C 100 50 0 0 5 10 15 20 25 Vz-Z-Voltage (V) Figure 5.Diode Capacitance vs.Z-Voltage BZX55C Series 100 100 10 Tj=25 C 0 80 Current (mA) 1 Iz-Z-current (mA) 0 0.2 0.4 0.6 0.8 1.0 60 0.1 IF-Forward 40 0.01 20 0.001 0 0 5 8 12 Vz-Z-Voltage (V) Figure 7. Z-Current vs. Z-Voltage 1000 16 20 VF-Forward Voltage (V) Figure 6. Forward Current vs.Forward Voltage 50 Iz=1mA 40 Vzm-Relative Voltage Change Ptot=500mW 0 Tamb=25 C 100 30 rz-Differentical Z-Resistance (*) 5mA 10mA 20 10 10 1 0 15 20 25 Vz- Z- Voltage (V) 30 35 0 5 10 15 20 25 Vz-Z-Voltage (V) Figure 9. Differential Z-Resistance vs. Z-Volltage Figure 8.Z-Current vs.Z-Voltage 1000 tp/T=0.5 100 tp/T=0.2 Single Pulse CD-Diode Capacitance (pF) RthJA=300K/W *T=Tjmax-Tamb 10 tp/T=0.1 tp/T=0.05 tp/T=0.02 tp/T=0.01 iZM=(-Vz+(Vz2+4rzj x*T/Zthp)1/2)/(2rzj) 1 10 -1 10 0 10 tp- Pulse Length (ms) 1 10 2 Figure 10. Thermal Response |
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