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 Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3892
DESCRIPTION *With TO-3P(H)IS package *Built-in damper diode *High voltage ,high speed APPLICATIONS *Horizontal deflection output applications
PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Fig.1 simplified outline (TO-3P(H)IS) and symbol
*
Absolute maximum ratings (Ta=25)
SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 1400 600 5 7 14 3.5 50 150 -55~150 UNIT V V V A A A W
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN
2SC3892
TYP.
MAX
UNIT
V(BR)EBO
Emitter-base breakdown voltage
IE=200mA , IC=0
5
V
VCEsat VBEsat
Collector-emitter saturation voltage
IC=5A ;IB=1.2A IC=5A ;IB=1.2A
5.0
V
Base-emitter saturation voltage
1.5
V A
ICBO
Collector cut-off current
VCB=500V; IE=0
10
IEBO
Emitter cut-off current
VEB=5V; IC=0
66
200
mA
hFE
DC current gain
IC=1A ; VCE=5V
8
12
fT
Transition frequency
IC=0.1A ; VCE=10V
1
3
MHz
COB
Collector output capacitance
IE=0 ; VCB=10V;f=1MHz IF=5A
210
pF
VF ts
Diode forward voltage
2.0
V s s
Storage time Resistive load ICP=5A ;IB1=1A;IB2=-2A;RL=40
2.5
tf
Fall time
0.2
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC3892
Fig.2 Outline dimensions (unindicated tolerance:0.15 mm)
3


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