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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1030 DESCRIPTION *With TO-3 package *Wide area of safe operation APPLICATIONS *For low frequency power amplifier applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 150 80 5 6 50 150 -55~150 UNIT V V V A W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL VCEO(SUS) V(BR)CBO V(BR)EBO VCEsat ICBO IEBO hFE-1 hFE-2 fT PARAMETER Collector-emitter sustaining voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=0.1A ;IB=0 IC=1mA ;IE=0 IE=1mA ;IC=0 IC=5A; IB=1A VCB=100V; IE=0 VEB=5V; IC=0 IC=1A ; VCE=5V IC=5A ; VCE=5V IC=1A ; VCE=5V 35 22 MIN 80 150 5 2SC1030 TYP. MAX UNIT V V V 1.5 0.1 0.1 200 V mA mA 10 MHz hFE-1 classifications A 35-70 B 60-120 C 100-200 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC1030 Fig.2 outline dimensions (unindicated tolerance:0.1mm) 3 |
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