 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| 2N4126 Vishay Semiconductors formerly General Semiconductor Small Signal Transistor (PNP) TO-226AA (TO-92) 0.181 (4.6) min. 0.492 (12.5) 0.181 (4.6) 0.142 (3.6) Features * PNP Silicon Epitaxial Transistor for switching and amplifier applications. * Especially suitable for AF-driver and low-power output stages. * As complementary type, the NPN transistor 2N4124 is recommended. Mechanical Data Case: TO-92 Plastic Package Weight: approx. 0.18g Packaging Codes/Options: E6/Bulk - 5K per container, 20K/box E7/4K per Ammo mag., 20K/box max. 0.022 (0.55) 0.098 (2.5) Dimensions in inches and (millimeters) Bottom View Maximum Ratings & Thermal Characteristics Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Peak Collector Current Base Current Power Dissipation at Tamb = 25C Thermal Resistance Junction to Ambient Air Junction Temperature Storage Temperature Range Symbol -VCEO -VCBO -VEBO -IC -ICM -IB Ptot RJA Tj TS Ratings at 25C ambient temperature unless otherwise specified. Value 25 25 4 200 800 50 625 200 (1) (1) Unit V V V mA mA mA mW C/W C C 150 -65 to +150 Note: (1) Valid provided that leads at a distance of 2 mm from case are kept at ambient temperature. Document Number 88116 07-May-02 www.vishay.com 1 2N4126 Vishay Semiconductors formerly General Semiconductor Electrical Characteristics (TJ = 25C unless otherwise noted) Parameter DC Current Gain Collector Cutoff Current Emitter Cutoff Current Collector Saturation Voltage Base Saturation Voltage Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Gain-Bandwidth Product Collector-Base Capacitance Symbol hFE -ICBO -IEBO -VCEsat -VBEsat -V(BR)CEO -V(BR)CBO -V(BR)EBO fT CCBO Test Condition VCE = -1 V, IC = -2.0 mA VCE = -1 V, IC = -50 mA VCB = -20 V VEB = -3 V IC = -50 mA, IB = -5 mA IC = -50 mA, IB = -5 mA IC = -1 mA IC = -10 A IE = -10 A VCE = -5 V, IC = -10 mA f = 50 MHz VCB = -10 V, f = 1MHz Min 120 -- -- -- -- -- 25 25 4 -- -- Typ -- 60 -- -- -- -- -- -- -- 200 12 Max 360 -- 50 50 0.4 0.95 -- -- -- -- -- Unit -- nA nA V V V V V MHz pF Ratings and Characteristic Curves (TA = 25C unless otherwise noted) www.vishay.com 2 Document Number 88116 07-May-02 2N4126 Vishay Semiconductors formerly General Semiconductor Ratings and Characteristic Curves (TA = 25C unless otherwise noted) Document Number 88116 07-May-02 www.vishay.com 3 2N4126 Vishay Semiconductors formerly General Semiconductor Ratings and Characteristic Curves (TA = 25C unless otherwise noted) www.vishay.com 4 Document Number 88116 07-May-02 |
Price & Availability of 2N4126
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |