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 Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2N3183
DESCRIPTION
*With TO-3 package *Excellent safe operating area *Low collector saturation voltage
APPLICATIONS
*For medium-speed switching and amplifier applications
PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION
ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -40 -40 -5 -5 75 150 -65~200 UNIT V V V A W
THERMAL CHARACTERISTICS SYMBOL R(th) jc PARAMETER Thermal resistance junction to case VALUE 1.17 UNIT /W
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
2N3183
MAX
UNIT
VCEO
Collector-emitter sustaining voltage
IC=-0.2A ;IB=0
-40
V
VCE(sat)
Collector-emitter saturation voltage
IC=-5A; IB=-1A
-1.5
V
VBE(on) ICEO
Base-emitter on voltage
IC=-5A ; VCE=-4V
-2.0
V
Collector cut-off current
VCE=Rated VCEO; IB=0
-5.0
mA
ICBO
Collector cut-off current
VCB=Rated VCBO; IE=0
-0.1
mA
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-1.0
mA
hFE-1
DC current gain
IC=-0.3A ; VCE=-4V
30
hFE-2
DC current gain
IC=-3A ; VCE=-4V
15
2
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2N3183
Fig.2 outline dimensions (unindicated tolerance:0.1mm)
3


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