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S T U/D410S
S amHop Microelectronics C orp. Mar. 26 2007
N-C hannel Logic Level E nhancement Mode Field E ffect Transistor
P R ODUC T S UMMAR Y
V DS S
40V
F E AT UR E S
( mW )
ID
30A
R DS (ON)
S uper high dense cell design for low R DS (ON).
Max
20 @ V G S = 10V 30 @ V G S = 4.5V
R ugged and reliable. S urface Mount P ackage. E S D P rotected.
D
D G S
G D
G
S
S TU S E R IE S TO-252AA(D-P AK)
S TD S E R IE S TO-251(l-P AK)
S
ABS OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwise noted)
P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous b -P ulsed
a
S ymbol VDS VGS @ TC=25 C ID IDM IS PD TJ, TS TG
Limit 40 20 30 100 8 50 -55 to 175
Unit V V A A A W C
Drain-S ource Diode Forward C urrent Maximum P ower Dissipation @ Tc=25 C Operating and S torage Temperature R ange
THE R MAL C HAR AC TE R IS TIC S
Thermal R esistance, Junction-to-C ase Thermal R esistance, Junction-to-Ambient R JC R JA 3 50 C /W C /W
1
S T U/D410S
E LE CTR ICAL CHAR ACTE R IS TICS (TC=25 C unless otherwise noted)
Parameter
5
S ymbol
BVDSS IDSS IGSS VGS(th) R DS (ON) ID(ON) gFS CISS COSS CRSS tD(ON) tr tD(OFF) tf Qg Qgs Qgd
Condition
VGS = 0V, ID = 250uA VDS = 32V, VGS = 0V VGS = 20V, VDS = 0V VDS = VGS, ID = 250uA VGS =10V, ID = 10A VGS =4.5V, ID= 8A VDS = 10V, VGS = 10V VDS = 10V, ID = 10A
Min Typ C Max Unit
40 1 10 1 1.9 16 23 30 17 690 140 95 3 20 30 V uA uA V
m ohm m ohm
OFF CHAR ACTE R IS TICS
Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage
ON CHAR ACTE R IS TICS a
Gate Threshold Voltage Drain-S ource On-S tate R esistance On-S tate Drain Current Forward Transconductance
A S
DYNAMIC CHAR ACTE R IS TICS b
Input Capacitance Output Capacitance R everse Transfer Capacitance VDS =15V, VGS = 0V f =1.0MHZ
PF PF PF
S WITCHING CHAR ACTE R IS TICS b
Turn-On Delay Time R ise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-S ource Charge Gate-Drain Charge VDD = 15V ID = 1 A VGS = 10V R GE N = 3 ohm VDS =20V, ID =10A,VGS =10V VDS =20V, ID =10A,VGS =4.5V VDS =20V, ID = 10A VGS =10V
2
13.1 13.5 45.7 11.8 13.5 6.7 1.65 3.85
ns ns ns ns nC nC nC nC
S T U/D410S
E LE CTR ICAL CHAR ACTE R IS TICS (TC=25 C unless otherwise noted)
Parameter
Diode Forward Voltage
S ymbol
VSD
Condition
VGS = 0V, Is = 8A
Min Typ Max Unit
0.84 1.3 V
DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS a
Notes a.Pulse Test:Pulse Width 300us, Duty Cycle 2%. b.Guaranteed by design, not subject to production testing.
45 V G S =10V 36 V G S =4.5V V G S =4V 16 20
ID, Drain C urrent(A)
27
ID, Drain C urrent (A)
12
18
V G S =3.5V
8 25 C 4
T j= 125 C
9
V G S =3V
-55 C 0 0 0.8 1.6 2.4 3.2 4.0 4.8
0 0
0.5
1.0
1.5
2.0
2.5
3.0
V DS , Drain-to-S ource Voltage (V )
V G S , G ate-to-S ource Voltage (V )
F igure 1. Output C haracteris tics
42 1.75
F igure 2. Trans fer C haracteris tics
R DS (ON), On-R es is tance Normalized
35
1.60 1.45 1.30 1.15 1.0 0.8 -25
V G S =4.5V ID=8A V G S =10V ID=10A
R DS (on) (m ) i
28 21 14 7 0
V G S =4.5V
V G S =10V
1
9
18
27
36
45
0
25
50
75
100
125 150
T j( C )
ID, Drain C urrent (A)
T j, J unction T emperature ( C )
F igure 3. On-R es is tance vs . Drain C urrent and G ate V oltage
F igure 4. On-R es is tance Variation with Drain C urrent and Temperature
3
S T U/D410S
B V DS S , Normalized Drain-S ource B reakdown V oltage V th, Normalized G ate-S ource T hres hold V oltage
1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 -50 -25 0 25 50 75 100 125 150 V DS =V G S ID=250uA 1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 ID=250uA
6
T j, J unction T emperature ( C )
T j, J unction T emperature ( C )
F igure 5. G ate T hres hold V ariation with T emperature
54
F igure 6. B reakdown V oltage V ariation with T emperature
20.0
ID=10A
Is , S ource-drain current (A)
45
10.0
125 C
25 C
R DS (on) (m ) i
36 125 C 27 18 75 C 9 0 25 C
75 C
1.0
0 2 4 6 8 10
0.2
0.4
0.6
0.8
1.0
1.2
V G S , G ate- S ource Voltage (V )
V S D, B ody Diode F orward V oltage (V )
F igure 7. On-R es is tance vs . G ate-S ource V oltage
F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent
4
S T U/D410S
900
V G S , G ate to S ource V oltage (V )
10 8 6 4 2 0 VDS =20V ID=10A
750
C is s
C , C apacitance (pF )
600 450 300 C os s 150 C rs s 0 0 5 10 15 20 25 30
6
0
3
6
9
12
15
18
21 24
V DS , Drain-to S ource Voltage (V )
Qg, T otal G ate C harge (nC )
F igure 9. C apacitance
F igure 10. G ate C harge
220
S witching T ime (ns )
Tr
150 100 10
ID, Drain C urrent (A)
RD
S
100 60 10
(
) ON
L im
it
1m 10 m 10 0m s 1s s s
T D(off) Tf
T D(on)
1
DC
1 1
V DS =15V ,ID=1A V G S =10V
6 10
60 100 300 600
0.1 0.1
V G S =10V S ingle P ulse T c=25 C
1
10
30
60
R g, G ate R es is tance (i )
V DS , Drain-S ource V oltage (V )
F igure 11.s witching characteris tics
2
F igure 12. Maximum S afe O perating Area
r(t),Normalized E ffective T ransient T hermal Impedance
1 D=0.5
0.2 0.1 0.1 P DM 0.05 t1 0.02 0.01 S ING LE P ULS E 0.01 10
-5 -4 -3 -2 -1
t2 1. 2. 3. 4. 10 10 10 R J A (t)=r (t) * R J A R J A=S ee Datas heet T J M-T A = P DM* R J A (t) Duty C ycle, D=t1/t2 1 10
10
S quare Wave P uls e Duration (s ec)
F igure 13. Normalized T hermal T rans ient Impedance C urve 5
S T U/D410S
6
S T U/D410S
5 95 7 84 9 6.00
35 05 85 0.94 4 3 0
9 7 30 3 9 36
3 41 3 3 5 1
4
L2
2.29 9.70 1.425 0.650 0.600
BSC 1 1.625 0.850 REF .
0.090 82 56 6 0.024
BSC 398 0.064 33 REF .
7
S T U/D410S
TO-252 Tape and Reel Data
TO-252 Carrier Tape
UNIT: PACKAGE TO-252 (16 A0 6.80 0.1 B0 10.3 0.1 K0 2.50 0.1 D0 2 D1
1.5 + 0.1 -0
E 16.0 0.3
E1 1.75 0.1
E2 7.5 0.15
P0 8. 0 0.1
P1 4. 0 0.1
P2 2.0 0.15
T 0.3 0.05
TO-252 Reel
S
UNIT: TAPE SIZE 16 REEL SIZE 330 M 330 0.5 N 97 1.0 W
17.0 + 1.5 -0
T 2. 2
H
13.0 + 0.5 - 0.2
K 10.6
S 2.0 0.5
G
R
V
8

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