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| To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices and power devices. Renesas Technology Corp. Customer Support Dept. April 1, 2003 MITSUBISHI Nch POWER MOSFET FS10KM-3 HIGH-SPEED SWITCHING USE FS10KM-3 OUTLINE DRAWING 10 0.3 6.5 0.3 3 0.3 Dimensions in mm 2.8 0.2 15 0.3 f 3.2 0.2 14 0.5 3.6 0.3 1.1 0.2 1.1 0.2 0.75 0.15 E 0.75 0.15 2.54 0.25 2.54 0.25 4.5 0.2 123 2.6 0.2 10V DRIVE VDSS ............................................................................... 150V rDS (ON) (MAX) ...........................................................170m ID ........................................................................................ 10A Integrated Fast Recovery Diode (TYP.) .......... 100ns Viso ............................................................................... 2000V w q q GATE w DRAIN e SOURCE e TO-220FN APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc. MAXIMUM RATINGS Symbol VDSS VGSS ID IDM IDA IS ISM PD Tch Tstg Viso -- (Tc = 25C) Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Isolation voltage Weight L = 100H VGS = 0V VDS = 0V Conditions Ratings 150 20 10 40 10 10 40 25 -55 ~ +150 Unit V V A A A A A W C C V g Feb.1999 AC for 1minute, Terminal to case Typical value -55 ~ +150 2000 2.0 MITSUBISHI Nch POWER MOSFET FS10KM-3 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS Symbol V (BR) DSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) trr Parameter Drain-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage (Tch = 25C) Test conditions ID = 1mA, VGS = 0V VGS = 20V, VDS = 0V VDS = 150V, VGS = 0V ID = 1mA, VDS = 10V ID = 5A, VGS = 10V ID = 5A, VGS = 10V ID = 5A, VDS = 10V VDS = 10V, VGS = 0V, f = 1MHz Limits Min. 150 -- -- 2.0 -- -- -- -- -- -- -- Typ. -- -- -- 3.0 122 0.61 12 1250 175 75 25 30 60 34 1.0 -- 100 Max. -- 0.1 0.1 4.0 170 0.85 -- -- -- -- -- -- -- -- 1.5 5.00 -- Unit V A mA V m V S pF pF pF ns ns ns ns V C/W ns Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time VDD = 80V, ID = 5A, VGS = 10V, RGEN = RGS = 50 -- -- -- -- -- -- IS = 5A, VGS = 0V Channel to case IS = 10A, dis/dt = -100A/s PERFORMANCE CURVES POWER DISSIPATION DERATING CURVE 50 POWER DISSIPATION PD (W) DRAIN CURRENT ID (A) MAXIMUM SAFE OPERATING AREA 3 2 102 7 5 3 2 101 7 5 3 2 40 30 tw = 10ms 20 100ms 10 0 0 50 100 150 200 100 7 TC = 25C 10ms 5 Single Pulse DC 3 1 2 3 5 7 102 2 3 5 7 103 2 2 3 5 7 10 DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) 5 VGS = 20V 10V 7V 6V TC = 25C Pulse Test 1ms CASE TEMPERATURE TC (C) OUTPUT CHARACTERISTICS (TYPICAL) 10 VGS = 20V 10V 7V 6V TC = 25C Pulse Test DRAIN CURRENT ID (A) 8 DRAIN CURRENT ID (A) 4 5V 6 3 4 5V 2 2 1 0 0 0.4 0.8 1.2 1.6 2.0 0 0 0.2 0.4 0.6 0.8 1.0 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN-SOURCE VOLTAGE VDS (V) Feb.1999 MITSUBISHI Nch POWER MOSFET FS10KM-3 HIGH-SPEED SWITCHING USE ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 2.0 TC = 25C Pulse Test 15A ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 200 TC = 25C Pulse Test 1.6 DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (m) DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) 160 VGS = 10V 20V 1.2 10A 120 0.8 5A 80 0.4 40 0 0 0 4 8 12 16 20 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 DRAIN CURRENT ID (A) GATE-SOURCE VOLTAGE VGS (V) TRANSFER CHARACTERISTICS (TYPICAL) 20 TC = 25C VDS = 10V Pulse Test FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) 103 7 5 4 3 2 102 7 5 4 3 2 VDS = 10V Pulse Test TC = 25C 75C 125C DRAIN CURRENT ID (A) 12 8 4 FORWARD TRANSFER ADMITTANCE yfs (S) 16 0 0 4 8 12 16 20 101 0 10 2 3 4 5 7 101 2 3 4 5 7 102 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) 104 7 5 3 2 103 7 5 3 2 102 7 5 3 Tch = 25C 2 f = 1MHZ 101 VGS = 0V Coss Crss SWITCHING CHARACTERISTICS (TYPICAL) 103 7 5 4 3 2 102 7 5 4 3 2 101 0 10 Tch = 25C VDD = 80V VGS = 10V RGEN = RGS = 50 Ciss SWITCHING TIME (ns) CAPACITANCE Ciss, Coss, Crss (pF) td(off) tf td(on) tr 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 DRAIN-SOURCE VOLTAGE VDS (V) 2 3 4 5 7 101 2 3 4 5 7 102 DRAIN CURRENT ID (A) Feb.1999 MITSUBISHI Nch POWER MOSFET FS10KM-3 HIGH-SPEED SWITCHING USE GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) 20 VGS = 0V Pulse Test GATE-SOURCE VOLTAGE VGS (V) 20 Tch = 25C ID = 10A 16 VDS = 50V 80V 100V SOURCE CURRENT IS (A) 16 TC = 125C 75C 25C 12 12 8 8 4 4 0 0 10 20 30 40 50 0 0 0.4 0.8 1.2 1.6 2.0 GATE CHARGE Qg (nC) SOURCE-DRAIN VOLTAGE VSD (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (tC) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) 101 7 VGS = 10V ID = 1/2ID 5 Pulse Test 4 3 2 100 7 5 4 3 2 10-1 -50 0 50 100 150 5.0 THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) VDS = 10V ID = 1mA GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) 4.0 3.0 2.0 1.0 0 -50 0 50 100 150 CHANNEL TEMPERATURE Tch (C) CHANNEL TEMPERATURE Tch (C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25C) TRANSIENT THERMAL IMPEDANCE Zth (ch-c) (C/W) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (tC) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4 VGS = 0V ID = 1mA TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 101 7 D = 1.0 5 3 0.5 2 0.2 1.2 1.0 0.8 100 0.1 7 5 3 2 10-1 7 5 3 2 0.05 0.02 0.01 Single Pulse PDM tw T D= tw T 0.6 0.4 -50 0 50 100 150 10-2 -4 10 2 3 5710-3 2 3 5710-22 3 5710-12 3 57100 2 3 57101 2 3 57102 PULSE WIDTH tw (s) Feb.1999 CHANNEL TEMPERATURE Tch (C) |
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