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| MITSUBISHI IGBT MODULES CM10AD00-12H MEDIUM POWER SWITCHING USE FLAT BASE, INSULATED TYPE CM10AD00-12H IC ..................................................................... 10A VCES ............................................................ 600V Insulated Type CIB Module 3 Inverter + 3 Converter + Brake Thyristor + Thermistor + Current shunt resistor APPLICATION AC & DC motor controls, General purpose inverters OUTLINE DRAWING & CIRCUIT DIAGRAM 100 900.25 7.5 8 8 GT N P1 N1 P2 8 8 8 2.54 2.54 2.54 7.62 7.62 8 Dimensions in mm 0.8 2-4.50.25 MOUNTING HOLES 12 EVP GVP EWP GWP 1 (1) GUP EUP P 13 5 t=0.6 MAIN CIRCUIT TERMINAL 2.5 18 6 530.5 55 56 2.5 18 6 R S 7.5 8 13 4 10 PPS PPS 0.6 t=0.6 T B TH1 U V TH2 W GB E GUN GVN GWN 2-R5 P1 GT P2 P CONTROL CIRCUIT TERMINAL 8 8 8 8 2.54 8 8 8 2.54 2.54 2.54 2.54 R S T GUP B GB GUN EUP GVP EVP GVN GWP EWP GWN 900.3 LABEL N1 TH1 TH2 (sense terminal) N U CIRCUIT DIAGRAM V W E Sep. 2000 MITSUBISHI IGBT MODULES CM10AD00-12H MEDIUM POWER SWITCHING USE FLAT BASE, INSULATED TYPE MAXIMUM RATINGS (Tj = 25C) INVERTER PART Symbol Parameter G-E Short C-E Short TC = 25C PULSE TC = 25C PULSE TC = 25C Conditions Collector-emitter voltage VCES VGES Gate-emitter voltage IC Collector Current ICM IE (Note.1) Emitter Current IEM (Note.1) PC (Note.3) Maximum collector dissipation Rating 600 20 10 20 10 20 40 Unit V V A A A A W (Note. 2) (Note. 2) BRAKE PART Symbol VCES VGES IC ICM PC (Note.3) VRRM IFM (Note.3) Parameter Collector-emitter voltage Gate-emitter voltage Collector Current Maximum collector dissipation Repetitive peak reverse voltage Forward current G-E Short C-E Short TC = 25C PULSE TC = 25C Clamp diode part Clamp diode part Conditions Rating 600 20 10 20 39 600 10 Unit V V A A W V A (Note. 2) CONVERTER PART Symbol VRRM Ea IO IFSM I 2t Parameter Conditions Rating 800 220 10 200 165 Unit V V A A A2s Repetitive peak reverse voltage Recommended AC input voltage DC output current 3 rectifying circuit Surge (non-repetitive) forward current 1/2 cycle at 60Hz, peak value, Non-repetitive I2t for fusing Value for one cycle of surge current THYRISTOR PART Symbol VDRM VRRM IT(AV) ITSM PGM PG(AV) IFGM VFGM VRGM di/dt Parameter Conditions Repetitive peak off-state voltage Repetitive peak reverse voltage Average on-state current Single-phase, half-wave 180 conduction Surge (non-repetitive) on-state current 1/2 cycle at 60Hz, peak value Non-repetitive Rating 800 800 10 200 10 1 3 10 5 100 Unit V V A A W W A V V A/s Peak gate power dissipation Average gate power dissipation Peak gate forward current Peak gate forward voltage Peak gate reverse voltage Critical rate of rise of on-state Current IG=100mA, VD=400V, dIG/dt=1A/s COMMON RATING Symbol Tj Tj Tstg Viso -- -- Parameter Junction temperature Junction temperature Storage temperature Isolation voltage Mounting torque Weight Conditions Inverter, brake, converter part Thyristor part AC 1 min. Mounting M4 screw Typical value Rating -40 ~ +150 -40 ~ +125 -40 ~ +125 2500 1.47 ~ 1.96 120 Unit C C C V N*m g Sep. 2000 MITSUBISHI IGBT MODULES CM10AD00-12H MEDIUM POWER SWITCHING USE FLAT BASE, INSULATED TYPE ELECTRICAL CHARACTERISTICS (Tj = 25C) INVERTER PART Symbol ICES VGE(th) IGES Parameter Collector cutoff current Gate-emitter threshold voltage Gate-emitter cutoff current Test conditions VCE = VCES, VGE = 0V IC = 1.0mA, VCE = 10V Min. -- 4.5 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Limits Typ. -- 6 -- 2.1 2.15 -- -- -- 30 -- -- -- -- -- -- 0.03 -- -- Max. 1 7.5 0.5 2.8 -- 1.0 0.9 0.2 -- 120 300 200 300 2.8 110 -- 3.1 4.9 Unit mA V A V nF nF nF nC ns ns ns ns V ns C C/W C/W VGE = VGES, VCE = 0V Tj = 25C Collector-emitter saturation voltage IC = 10A, VGE = 15V VCE(sat) Tj = 150C Input capacitance Cies VCE = 10V Output capacitance Coes VGE = 0V Cres Reverse transfer capacitance QG VCC = 300V, IC = 10A, VGE = 15V Total gate charge td(on) Turn-on delay time VCC = 300V, IC = 10A tr Turn-on rise time VGE1 = VGE2 = 15V td(off) RG = 63 Turn-off delay time tf Turn-off fall time Resistive load VEC(Note.1) Emitter-collector voltage IE = 10A, VGE = 0V trr (Note.1) Reverse recovery time IE = 10A, VGE = 0V Qrr (Note.1) Reverse recovery charge diE / dt = - 20A / s Rth(j-c)Q IGBT part, Per 1/6 module Thermal resistance Rth(j-c)R FWDi part, Per 1/6 module (Note.4) BRAKE PART Symbol ICES VGE(th) IGES VCE(sat) Cies Coes Cres QG VFM Rth(j-c)Q Rth(j-c)R Parameter Collector cutoff current Gate-emitter threshold voltage Gate-emitter cutoff current Test conditions VCE = VCES, VGE = 0V IC = 1.0mA, VCE = 10V Min. -- 4.5 -- -- -- -- -- -- -- -- -- -- Limits Typ. -- 6 -- 2.1 2.15 -- -- -- 30 -- -- -- Max. 1 7.5 0.5 2.8 -- 1.0 0.9 0.2 -- 2.8 3.2 5.0 Unit mA V A V nF nF nF nC V C/W C/W VGE = VGES, VCE = 0V Tj = 25C IC = 10A, VGE = 15V Collector-emitter saturation voltage Tj = 150C Input capacitance VCE = 10V Output capacitance VGE = 0V Reverse transfer capacitance VCC = 300V, IC = 10A, VGE = 15V Total gate charge IF = 10A, Clamp diode part Forward voltage drop IGBT part Thermal resistance Clamp diode part (Note.4) CONVERTER PART Symbol IRRM VFM Rth(j-c) Parameter Repetitive reverse current Forward voltage drop Thermal resistance Test conditions VR = VRRM, Tj = 150C IF = 10A Per 1/6 module Min. -- -- -- Limits Typ. -- -- -- Max. 8 1.5 3.1 Unit mA V C/W Sep. 2000 MITSUBISHI IGBT MODULES CM10AD00-12H MEDIUM POWER SWITCHING USE FLAT BASE, INSULATED TYPE THYRISTOR PART Symbol IDRM IRRM ITM IGT VGT dv/dt IH Rth(j-c) Parameter Test conditions Min. -- -- -- -- -- 500 -- -- Limits Typ. -- -- -- -- -- -- 50 -- Max. 1 1 1.45 50 3 -- -- 1.75 Unit mA mA V mA V V/s mA C/W Repetitive peak off-state current VD=800V Repetitive peak reverse current VR=800V IT=10A, instantaneous means On-state voltage Gate trigger current Gate trigger voltage Critical rate of rise of off-state Voltage Holding current Thermal resistance VD=6V, IT=1A VD=6V, IT=1A Tj=125C, VD=540V, exp. waveform THERMISTOR PART Symbol RTH B Parameter Resistance B Constant Test conditions TC = 25C Resistance at 25C, 50C Min. -- -- Limits Typ. 100 4000 Max. -- -- Unit k K (Note.5) RESISTOR PART Symbol R -- Parameter Resistance Temperature coefficient Test conditions Measured between N-N1 Limits Min. -- -- Typ. 5.9 0.048 Max. -- -- Unit m %/C COMMON RATING Symbol Rth(c-f) Note. 1 2 3 4 5 Parameter Contact thermal resistance Test conditions Case to fin, Thermal compound applied* 1 (1 module) Min. -- Limits Typ. 0.05 Max. -- Unit C/W IE, VEC, trr, Qrr, diE/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode. Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating. Junction temperature (Tj) should not increase beyond 150C. Pulse width and repetition rate should be such as to cause negligible temperature rise. B = (InR1-InR2)/(1/T1-1/T2) R1 : Resistance at T1(K) R2 : Resistance at T2(K) *1 : Typical value is measured by using Shin-etsu Silicone "G-746". Sep. 2000 |
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