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INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor BU826A DESCRIPTION *Collector-Emitter Sustaining Voltage: VCEO(SUS)= 400V(Min) *High Switching Speed APPLICATIONS Designed for line operated switchmode applications such as: *Switching regulators *Inverters *Solenoid and relay drivers ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VCES VCEO VEBO IC ICM IB B PARAMETER Collector-Emitter Voltage(VBE= 0) Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current Collector Power Dissipation @ TC=25 Junction Temperature Storage Temperature Range VALUE 1000 400 8 6 8 0.5 125 150 -65~150 UNIT V V V A A A W PC TJ Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case MAX 1.0 UNIT /W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN BU826A TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA ;IB= 0,L= 25mH 400 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 2.5A; IB= 55mA 2.0 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 4A; IB= 0.2A B 2.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 2.5A; IB= 55mA VCE= RatedVCES; RBE= 0 VCE= RatedVCES; RBE= 0,TC= 125 VEB= 8V; IC= 0 2.2 1.0 2.0 150 V ICES Collector Cutoff Current mA IEBO Emitter Cutoff Current mA isc Websitewww.iscsemi.cn 2 |
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