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 INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Darlington Power Transistor
BU826A
DESCRIPTION *Collector-Emitter Sustaining Voltage: VCEO(SUS)= 400V(Min) *High Switching Speed
APPLICATIONS Designed for line operated switchmode applications such as: *Switching regulators *Inverters *Solenoid and relay drivers
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL VCES VCEO VEBO IC ICM IB
B
PARAMETER Collector-Emitter Voltage(VBE= 0) Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current Collector Power Dissipation @ TC=25 Junction Temperature Storage Temperature Range
VALUE 1000 400 8 6 8 0.5 125 150 -65~150
UNIT V V V A A A W
PC TJ Tstg
THERMAL CHARACTERISTICS
SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case MAX 1.0 UNIT /W
isc Websitewww.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Darlington Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN
BU826A
TYP.
MAX
UNIT
VCEO(SUS)
Collector-Emitter Sustaining Voltage
IC= 100mA ;IB= 0,L= 25mH
400
V
VCE(sat)-1
Collector-Emitter Saturation Voltage
IC= 2.5A; IB= 55mA
2.0
V
VCE(sat)-2
Collector-Emitter Saturation Voltage
IC= 4A; IB= 0.2A
B
2.5
V
VBE(sat)
Base-Emitter Saturation Voltage
IC= 2.5A; IB= 55mA VCE= RatedVCES; RBE= 0 VCE= RatedVCES; RBE= 0,TC= 125 VEB= 8V; IC= 0
2.2 1.0 2.0 150
V
ICES
Collector Cutoff Current
mA
IEBO
Emitter Cutoff Current
mA
isc Websitewww.iscsemi.cn
2


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