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| AP40P03GH/J Pb Free Plating Product Advanced Power Electronics Corp. Lower On-resistance Simple Drive Requirement Fast Switching Characteristic RoHS Compliant G S D P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -30V 28m -30A Description The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP40P03GJ) is available for low-profile applications. G D S GD S TO-252(H) TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25 ID@TC=100 IDM PD@TC=25 TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating -30 20 -30 -18 -120 31.3 0.25 -55 to 150 -55 to 150 Units V V A A A W W/ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 4 110 Units /W /W Data and specifications subject to change without notice 201109063-1/4 AP40P03GH/J Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS BVDSS/Tj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=-250uA 2 Min. -30 -1 - Typ. -0.02 20 14 3 9 12 56 30 57 915 280 195 Max. Units 28 50 -3 -1 -25 100 22 1465 V V/ m m V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25, ID=-1mA RDS(ON) Static Drain-Source On-Resistance VGS=-10V, ID=-18A VGS=-4.5V, ID=-10A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25oC) Drain-Source Leakage Current (Tj=150 C) o VDS=VGS, ID=-250uA VDS=-10V, ID=-18A VDS=-30V, VGS=0V VDS=-24V, VGS=0V VGS= 20V ID=-18A VDS=-24V VGS=-4.5V VDS=-15V ID=-18A RG=3.3,VGS=-10V RD=0.8 VGS=0V VDS=-25V f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 Source-Drain Diode Symbol VSD trr Qrr Parameter Forward On Voltage 2 2 Test Conditions IS=-18A, VGS=0V IS=-18A, VGS=0V, dI/dt=-100A/s Min. - Typ. 30 21 Max. Units -1.2 V ns nC Reverse Recovery Time Reverse Recovery Charge Notes: 1.Pulse width limited by safe operating area. 2.Pulse width <300us , duty cycle <2%. 2/4 AP40P03GH/J 120 100 -10V 100 -10V TA=150oC 80 T A = 25 o C -7.0V -ID , Drain Current (A) -7.0V -ID , Drain Current (A) 80 60 60 -5.0V -4.5V -5.0V 40 40 -4.5V 20 20 V G = -3.0 V 0 0 2 4 6 8 0 2 4 6 V G = -3.0 V 0 8 -V DS , Drain-to-Source Voltage (V) -V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 50 1.6 I D = -10 A T C =25 Normalized RDS(ON) RDS(ON) (m ) 40 1.4 I D =-1 8 A V G =-10V 1.2 1.0 30 0.8 20 0.6 2 4 6 8 10 -50 0 50 100 150 -V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( o C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 2.5 18 15 2.0 12 Normalized -VGS(th) (V) -IS(A) 1.5 9 T j =150 C o T j =25 C o 1.0 6 0.5 3 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 0.0 -50 0 50 100 150 -V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( o C) Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3/4 AP40P03GH/J f=1.0MHz 12 10000 -VGS , Gate to Source Voltage (V) 10 V DS =- 24 V I D =-1 8 A 8 6 C (pF) 1000 C iss 4 2 C oss C rss 0 0 5 10 15 20 25 30 100 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) -V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1000.0 1 Normalized Thermal Response (Rthjc) Duty factor=0.5 100.0 100us 1ms 10.0 0.2 0.1 -ID (A) 0.1 0.05 10ms 1.0 PDM t 0.02 T c =25 o C Single Pulse 100ms 1s DC T 0.01 Single Pulse Duty factor = t/T Peak Tj = PDM x Rthjc + T C 0.1 0.1 1 10 100 0.01 0.00001 0.0001 0.001 0.01 0.1 1 -V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance VDS 90% VG QG -4.5V QGS QGD 10% VGS td(on) tr td(off) tf Charge Q Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform 4/4 |
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