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SMD Type
Transistors
Silicon NPN Triple Diffusion Planar Type 2SD1259;2SD1259A
TO-252
+0.15 1.50 -0.15
Unit: mm
+0.1 2.30-0.1 +0.8 0.50-0.7
+0.15 6.50-0.15 +0.2 5.30-0.2
Features
Satisfactory linearity of forward current transfer ratio hFE.
+0.2 9.70 -0.2
+0.1 0.80-0.1
+0.15 0.50 -0.15
0.127 max
2.3
+0.15 4.60-0.15
+0.1 0.60-0.1
+0.28 1.50 -0.1
+0.25 2.65 -0.1
+0.15 5.55 -0.15
1 Base 2 Collector 3 Emitter
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage 2SD1259 2SD1259A Collector-emitter voltage 2SD1259 2SD1259A Emitter-base voltage Collector current Peak collector current Base current Collector power dissipation Ta = 25 VEBO IC ICP IB PC Tj Tstg VCEO Symbol VCBO Rating 80 100 60 80 6 3 6 1 1.3 40 Junction temperature Storage temperature 150 -55 to +150 Unit V V V V V A A A W W
Electrical Characteristics Ta = 25
Parameter Collector-emitter voltage 2SD1259 2SD1259A Collector-base cutoff current 2SD1259 2SD1259A Collector-emitter cutoff current Emitter-base cutoff current Forward current transfer ratio Collector-emitter saturation voltage Transition frequency ICEO IEBO hFE ICBO VCB = 80 V, IE = 0 VCB = 100 V, IE = 0 VCE = 40 V, IB = 0 VEB = 6 V, IC = 0 VCE = 4 V, IC = 0.5 A 500 Symbol VCEO Testconditons IC = 25 mA, IB = 0 Min 60 80 100 100 100 100 2500 1.0 50 V MHz Typ Max Unit V V iA iA iA iA
VCE(sat) IC = 2 A, IB = 0.05 A fT VCE = 12 V, IC = 0.2 A, f = 10 MHz
hFE Classification
Rank hFE Q 500 1000 P 800 1500 O 1200 2500
3.80
High forward current transfer ratio hFE.
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