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Datasheet File OCR Text: |
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3552 DESCRIPTION *High Breakdown Voltage *High Switching Speed *Wide Area of Safe Operation APPLICATIONS *Designed for switching regulator applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1100 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current- Continuous 12 A ICM Collector Current-Peak 30 A IB B Base Current- Continuous 6 A PC Collector Power Dissipation @ TC=25 150 W TJ Junction Temperature 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL V(BR)CEO V(BR)EBO V(BR)CBO VCE(sat) VBE(sat) ICBO IEBO hFE-1 hFE-2 COB fT PARAMETER Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Output Capacitance Current-Gain--Bandwidth Product CONDITIONS IC= 5mA; RBE= IE= 1mA; IC= 0 IC= 1mA; IE= 0 IC= 6A; IB= 1.2A B 2SC3552 MIN 800 7 1100 TYP. MAX UNIT V V V 2.0 1.5 10 10 10 8 215 15 40 V V A A IC= 6A; IB= 1.2A B VCB= 800V ; IE= 0 VEB= 5V ; IC= 0 IC= 0.8A ; VCE= 5V IC= 4A ; VCE= 5V IE= 0; VCB= 10V; ftest=1.0MHz IC= 0.8A ; VCE= 10V pF MHz Switching Times ton tstg tf Turn-on Time Storage Time Fall Time IC= 8A , IB1= 1.6A; IB2= -3.2A RL= 500; VCC=400V 0.5 3.0 0.3 s s s hFE-1 Classifications K 10-20 L 15-30 M 20-40 isc Websitewww.iscsemi.cn 2 |
Price & Availability of 2SC3552
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