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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1051 DESCRIPTION With TO-3 package Wide area of safe operation APPLICATIONS For low frequency power amplifier and large power switching applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=ae ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER ANG CH Collector-base voltage IN Collector-emitter voltage EMIC ES Open emitter Open base Open collector CONDITIONS OND TOR UC VALUE 150 100 5 7 UNIT V V V A W ae ae Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25ae 60 150 -55~150 Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER CONDITIONS MIN 2SC1051 SYMBOL TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=50mA ;IB=0 100 V V(BR)CBO V(BR)EBO Collector-base breakdown voltage IC=1mA ;IE=0 IE=1mA ;IC=0 150 V Emitter-base breakdown voltage 5 V VCEsat Collector-emitter saturation voltage IC=5A; IB=0.5A 2.0 V VBE Base-emitter on voltage IC=1A ; VCE=5V 1.5 V ICBO Collector cut-off current VCB=150V; IE=0 0.1 mA IEBO Emitter cut-off current hFE fT DC current gain Transition frequency D VEB=5V; IC=0 0.1 mA IC=1A ; VCE=5V IC=0.5A ; VCE=5V hFE Classifications C 40-80 IN 60-120 ANG CH E F 100-200 EMIC ES OND TOR UC 40 320 8 MHz 160-320 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC1051 SEM GE HAN INC OND IC TOR UC Fig.2 outline dimensions (unindicated tolerance:A 0.1mm) 3 |
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