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| INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SA1358 DESCRIPTION *High Collector-Emitter Breakdown Voltage : V(BR)CEO= -120V(Min) *Complement to Type 2SC3421 APPLICATIONS *Designed for audio frequency power amplifier applications. *Suitable for driver of 60 to 80 Watts audio amplifier. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -5 V IC IB B Collector Current-Continuous -1 A Base Current-Continuous Collector Power Dissipation @ TC=25 -0.1 A 10 W PC Collector Power Dissipation @ Ta=25 TJ Junction Temperature 1.5 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SA1358 TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA ; IB= 0 -120 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -1mA ; IC= 0 -5 V VCE(sat) Collector-Emitter Saturation Voltage IC= -500mA; IB= -50mA -1.0 V VBE(on) ICBO Base-Emitter On Voltage IC= -500mA ; VCE= -5V VCB= -120V; IE= 0 -1.0 V A A Collector Cutoff Current -0.1 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -0.1 hFE DC Current Gain IC= -0.1A ; VCE= -5V 80 240 fT Current-Gain--Bandwidth Product IC= -0.1A ; VCE= -5V 120 MHz COB Output Capacitance IE= 0; VCB= -10V, ftest= 1MHz 30 pF hFE Classifications O 80-160 Y 120-240 isc Websitewww.iscsemi.cn 2 |
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