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| Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N5676 DESCRIPTION With TO-66 package High transition frequency APPLICATIONS For use as high-frequency drivers in audio amplifiers PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-66) and symbol DESCRIPTION Absolute maximum ratings(Ta=ae ) SYMBOL VCBO VCEO VEBO IC PD Tj Tstg Collector-base voltage PARAMETER Collector-emitter voltage IN Emitter-base voltage Collector current HAN C SEM GE TC=25ae Open emitter Open base OND IC CONDITIONS TOR UC VALUE -125 -100 -5 -2 2 150 -65~200 ae ae UNIT V V V A W Open collector Total Power Dissipation Junction temperature Storage temperature THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 2.5 UNIT ae /W Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER CONDITIONS MIN TYP. 2N5676 SYMBOL MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=-0.1A ;IB=0 -100 V VCEsat VBEsat Collector-emitter saturation voltage IC=-1A; IB=-0.1A IC=-1A ;IB=-0.1A -0.5 V Base-emitter saturation voltage -1.2 V VBE Base-emitter on voltage IC=-1A ; VCE=-5V -1.2 V ICEO Collector cut-off current VCE=-50V; IB=0 -0.5 mA ICBO Collector cut-off current VCB=-125V; IE=0 -0.1 mA IEBO Emitter cut-off current hFE-1 hFE-2 DC current gain DC current gain ANG CH VEB=-5V; IC=0 -0.1 mA IC=-0.1A ; VCE=-5V IC=-0.5A ; VCE=-5V 50 fT Transition frequency IN EMIC ES IC=-100mA;VCE=10V OND 50 TOR UC 150 MHz 50 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2N5676 SEM GE HAN INC OND IC TOR UC Fig.2 outline dimensions 3 |
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