 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5293 2N5295 2N5297 DESCRIPTION With TO-220 package High power dissipation APPLICATIONS Power amplifier and medium speed switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Ta=25ae ) SYMBOL PARAMETER 2N5293 2N5295 VCBO Collector-base voltage VCEO Collector-emitter voltage CHA IN NG S 2N5297 2N5293 2N5295 2N5297 Open emitter OND MIC E CONDITIONS TOR UC VALUE 80 60 80 70 40 60 UNIT V Open base V VEBO IC IB PT Tj Tstg Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Storage temperature Open collector 7 4 2 V A A W ae ae TC=25ae 36 150 -65~150 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case MAX 3.47 UNIT ae /W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER 2N5293 VCEO(SUS) Collector-emitter sustaining voltage 2N5295 2N5297 2N5293 VCEsat Collector-emitter saturation voltage 2N5295 2N5297 2N5293 VBE Base-emitter on voltage 2N5295 2N5297 IC=0.1A ;IB=0 SYMBOL 2N5293 2N5295 2N5297 CONDITIONS MIN 70 40 60 TYP. MAX UNIT V IC=0.5A;IB=0.05A IC=1.0A;IB=0.1A IC=1.5A;IB=0.15A IC=0.5A ; VCE=4V IC=1.0A ; VCE=4V IC=1.5A ; VCE=4V VCE=65V;VBE=1.5V TC=150ae VCE=35V;VBE=1.5V TC=150ae VCE=50V;RBE=100| TC=150ae 1.1 1.3 1.5 0.5 3.0 2.0 5.0 0.5 2.0 V 1.0 V ICEV ICER Collector cut-off current Collector cut-off current 2N5293/5297 2N5295 2N5293/5297 2N5295 IEBO Emitter cut-off current hFE DC current gain CHA IN NG S 2N5293/5297 2N5293 2N5295 2N5297 CON EMI VEB=7V; IC=0 VEB=5V; IC=0 IC=0.5A ; VCE=4V IC=1.0A ; VCE=4V IC=1.5A ; VCE=4V IC=0.2A ; VCE=4V TOR DUC 1.0 30 120 mA mA mA 20 0.8 80 MHz fT Transition frequency 2N5293 IC=0.5A;IB=0.05A;VCC=30V IC=1.0A;IB=0.1A;VCC=30V IC=1.5A;IB=0.15A;VCC=30V IC=0.5A;IB=0.05A;VCC=30V IC=1.0A;IB=0.1A;VCC=30V IC=1.5A;IB=0.15A;VCC=30V 15 |I s 5.0 |I s ton Turn-on time 2N5295 2N5297 2N5293 toff Turn-off time 2N5295 2N5297 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2N5293 2N5295 2N5297 NG S HA INC CON EMI TOR DUC Fig.2 Outline dimensions(unindicated tolerance:A 0.10 mm) 3 |
Price & Availability of 2N5293
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |