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| SMD Type SILICON SWITCHING DIODE 1SS123 Diodes SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Unit: mm +0.1 2.4-0.1 Low capacitance: Ct = 4.0 pF MAX High speed switching: trr = 9.0 ns MAX. Wide applications including switching,limitter,clipper. Double diode configuration assures economical use. 1 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.1 1.3-0.1 Features 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Peak Reverse Voltage DC Reverse Voltage Peak Reverse Voltage Average Rectified Current DC Forward Current Junction Temperature Storage Temperature Range Junction to Ambient* Junction to Ambient R R Symbol VRM VR IFM IO IF Tj Tstg Rating 70 70 200 100 100 150 -55 to+ 150 1.0 0.67 /mW /mW Unit V V mA mA mA Electrical Characteristics Ta = 25 Parameter Symbol Test Conditions IF = 1.0 mA Continuous reverse voltage VF IF = 10 mA IF = 50 mA IF = 100 mA Reverse current Capacitance Reverse recovery time Forward recovery voltage IR Ct trr Vf r VR = 70 V VR = 0, f = 1.0 MHz IF = 100 mA,VR = 1 V,RL = 100 IF = 100 mA 2.5 Min Typ 600 750 855 900 Max 715 855 1100 1300 1.0 4.0 9.0 1.75 A pF ns V mV Unit Marking Marking A7 +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1 |
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