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 SUR3020PT thru SUR3060PT
Ultra Fast Recovery Epitaxial Diodes
A C(TAB) A C A C A Dimensions TO-247AD
Dim. A B C D E F G H J K Millimeter Min. Max. 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 4.32 5.4 1.65 1.0 10.8 4.7 0.4 1.5 5.49 6.2 2.13 4.5 1.4 11.0 5.3 0.8 2.49 Inches Min. Max. 0.780 0.819 0.610 0.140 0.170 0.212 0.065 0.040 0.426 0.185 0.016 0.087 0.800 0.845 0.640 0.144 0.216 0.244 0.084 0.177 0.055 0.433 0.209 0.031 0.102
A=Anode, C=Cathode, TAB=Cathode
SUR3020PT SUR3030PT SUR3040PT SUR3060PT Symbol IFRMS IFAVM IFRM
VRSM V 200 300 400 600
VRRM V 200 300 400 600 Test Conditions
L M N
Maximum Ratings 25 15 150 100 110 85 95 50 50 36 37 -40...+150 150 -40...+150
Unit A
TVJ=TVJM TC=100oC; rectangular, d=0.5 tp<10us; rep. rating, pulse width limited by TVJM TVJ=45oC t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine
IFSM
TVJ=150oC TVJ=45oC
A
I2t
TVJ=150oC
A2s
TVJ TVJM Tstg Ptot Md Weight TC=25oC Mounting torque
o
C
62 0.4...0.6 2
W Nm g
SUR3020PT thru SUR3060PT
Ultra Fast Recovery Epitaxial Diodes
Symbol
Test Conditions TVJ=25oC; VR=VRRM TVJ=25oC; VR=0.8.VRRM TVJ=125oC; VR=0.8.VRRM IF=16A; TVJ=150oC TVJ=25oC For power-loss calculations only TVJ=TVJM
Characteristic Values typ. max. 50 25 3 1.5 1.7 1.12 23.2 2 0.5 60
Unit uA uA mA V V m K/W
IR
VF VTO rT RthJC RthCK RthJA trr IRM
IF=1A; -di/dt=200A/us; VR=30V; TVJ=25oC _ VR=100V; IF=60A; -diF/dt=200A/us; L<0.05uH; TVJ=100 C
o
35 4
50 4.4
ns A
FEATURES
* International standard package JEDEC TO-247AD * Planar passivatd chips * Very short recovery time * Extremely low switching losses * Low IRM-values * Soft recovery behaviour
APPLICATIONS
* Antiparallel diode for high frequency switching devices * Antisaturation diode * Snubber diode * Free wheeling diode in converters and motor control circuits * Rectifiers in switch mode power supplies (SMPS) * Inductive heating and melting * Uninterruptible power supplies (UPS) * Ultrasonic cleaners and welders
ADVANTAGES
* High reliability circuit operation * Low voltage peaks for reduced protection circuits * Low noise switching * Low losses * Operating at lower temperature or space saving by reduced cooling
SUR3020PT thru SUR3060PT
Ultra Fast Recovery Epitaxial Diodes
F ig. 1 F orward current vers us voltage drop.
F ig. 2 R ecovery charge vers us -diF /dt.
F ig. 3 P eak revers e current vers us -diF /dt.
F ig. 4 Dynamic parameters vers us junction temperature.
F ig. 5 R ecovery time vers us -diF /dt.
F ig. 6 P eak forward voltage vers us diF /dt.
F ig. 7 T rans ient thermal impedance junction to cas e.


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