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1N6084 SAMTEC AM3020 54198 01OD00 PE45137 F1000 S18LA
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  Datasheet File OCR Text:
 SMD Type
Medium Power Transistor FMMT449
SOT-23
+0.1 2.9-0.1 +0.1 0.4-0.1
Transistors IC
Unit: mm
+0.1 2.4-0.1
1
+0.1 0.95-0.1 +0.1 1.9-0.1
2
0.55
Low equivalent on-resistance.
+0.1 1.3-0.1
Features
0.4
3
+0.05 0.1-0.01
+0.1 0.97-0.1
1.Base 2.Emitter 3.collector
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Peak collector current Collector current Base current Power dissipation Operating and storage temperature range Symbol VCBO VCEO VEBO ICM IC IB Ptot Tj,Tstg Rating 50 30 5 2 1 200 500 -55 to +125 Unit V V V A A mA mW
Electrical Characteristics Ta = 25
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cut-off current Collector-emitter saturation voltage * Base-emitter saturation voltage * Base-emitter voltage * Symbol V(BR)CBO IC=1mA,IE=0 V(BR)CEO IC=10mA,IB=0 V(BR)EBO IE=100iA,IC=0 ICBO IEBO VCE(sat) VCB=40V,IE=0 VCB=40V,TamB=100 VEB=4V,IC=0 IC=1A,IB=100mA IC=2A,IB=200mA Testconditons Min 50 30 5 0.1 10 0.1 0.5 1.0 1.25 1.0 70 100 80 40 150 15 MHz pF 300 Typ Max Unit V V V iA iA iA V V V
VBE(sat) IC=1A,IB=100mA VBE(ON) IC=1A,VCE=2V IC=50mA, VCE=2V*
Static Forward Current Transfer Ratio
hFE
IC=500mA, VCE=2V* IC=1A, VCE=2V* IC=2A, VCE=2V*
Current-gain-bandwidth product Output capacitance * Pulse width=300is. Duty cycle 2%
fT Cobo
IC=50mA,VCE=10V,f=100MHz VCB=10V,f=1MHz
Marking
Marking 449
+0.1 0.38-0.1
0-0.1
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