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FAN5612 SB315 MC1452 MAX4756A MPX55000 875KAC14 2SB647A 2SC4213
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  Datasheet File OCR Text:
 SMD Type
Transistors
PNP Silicon Power Switching Transistor FCX717
Features
2W power dissipation. 10A peak pulse current. Excellent HFE characteristics up to 10 Amps. Extremely low saturation voltage E.g. 12mv Typ. Extremely low equivalent on-resistance. RCE(sat) 77mU at 3A.
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Continuous collector current Peak pulse current Base current Power dissipation Operating and storage temperature range Symbol VCBO VCEO VEBO ICM IC IB Ptot Tj,Tstg Rating -12 -12 -5 -10 -3 -500 1 -55 to +150 Unit V V V A A mA W
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1
SMD Type
FCX717
Electrical Characteristics Ta = 25
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage * Emitter-base breakdown voltage Collector cut-off current Collector Emitter Cut-Off Current Emitter Cut-Off Current Collector-emitter saturation voltage * Base-emitter saturation voltage * Base-emitter ON voltage * Symbol V(BR)CBO IC=-100iA V(BR)CEO IC=-10mA V(BR)EBO IE=-100iA ICBO ICES IEBO VCB=-10V VCE=-10V VEB=-4V Testconditons
Transistors
Min -12 -12 -5
Typ -35 -25 -8.5
Max
Unit V V V
-100 -100 -100 -12 -110 -230 -0.85 300 300 160 60 45 80 475 450 240 100 70 110 21 70 130 30 -20 -150 -320
nA nA nA mV V V
IC=-0.1A, IB=-10mA VCE(sat) IC=-1A, IB=-10mA IC=-3A, IB=-50mA VBE(sat) IC=-3A, IB=-50mA VBE(on) IC=-3A, VCE=-2V IC=-10mA,VCE=-2V IC=-0.1A,VCE=-2V IC=-3A,VCE=-2V IC=-8A,VCE=-2V IC=-10A,VCE=-2V IC=-50mA, VCE=-10V, f=100MHz VCB=-10V, f=1MHz IC=-2A, VCC=-6V IB1=IB2=50mA
-0.92 -1.05 -1.0
Static Forward Current Transfer Ratio *
hFE
Transitional frequency Output capacitance Turn-on time Turn-off time * Pulse test: tp = 300 is; d 0.02.
fT Cobo t(on) t(off)
MHz pF ns ns
Marking
Marking 717
2
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