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2SK3687-01MR
FUJI POWER MOSFET
200311
N-CHANNEL SILICON POWER MOSFET
Outline Drawings [mm]
Super FAP-G Series
Features
High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power
TO-220F
Applications
Switching regulators DC-DC converters UPS (Uninterruptible Power Supply)
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25C unless otherwise specified)
Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Non-Repetitive Maximum avalanche current Non-Repetitive Maximum avalanche energy Maximum Drain-Source dV/dt Peak diode recovery dV/dt Max. power dissipation Operating and storage temperature range Isolation voltage Symbol Ratings VDS 600 VDSX 600 ID 16 ID(puls] 64 VGS 30 IAS 16 EAS dVDS/dt dV/dt PD Tch Tstg VISO 242.7 20 5 2.16 97 +150 -55 to +150 2 Unit V V A A V A mJ kV/s kV/s W Remarks VGS=-30V
Tch<150C = L=1.74mH VCC=60V *1 VDS< 600V = *2 Ta=25C Tc=25C
Equivalent circuit schematic
Drain(D)
C C kVrms t=60sec, f=60Hz
Gate(G) Source(S)
*1 See to Avalanche Energy Graph *2 IF < -ID, -di/dt=50A/s, VCC < BVDSS, Tch < 150C = = =
Electrical characteristics (Tc =25C unless otherwise specified)
Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV VSD trr Qrr Test Conditions ID= 250A VGS=0V ID= 250A VDS=VGS VDS=600V VGS=0V Tch=25C VDS=480V VGS=0V Tch=125C VGS=30V VDS=0V ID=8A VGS=10V ID=8A VDS=25V VDS=25V VGS=0V f=1MHz VCC=300V ID=8A VGS=10V RGS=10 VCC=300V ID=16A VGS=10V L=1.74mH Tch=25C IF=16A VGS=0V Tch=25C IF=16A VGS=0V -di/dt=100A/s Tch=25C Test Conditions channel to case channel to ambient
Min.
600 3.0
Typ.
Max.
5.0 25 250 100 0.57
Units
V V A nA S pF
10 0.42 6.5 13 1590 2390 200 300 8 12 29 43.5 16 24 58 87 8 12 34 51 12 18 10 15 16 1.00 1.50 0.68 7.8
ns
nC
A V s C
Thermalcharacteristics
Item Thermal resistance Symbol Rth(ch-c) Rth(ch-a)
Min.
Typ.
Max.
1.289 58.0
Units
C/W C/W
1
2SK3687-01MR
Characteristics
Allowable Power Dissipation PD=f(Tc)
FUJI POWER MOSFET
120
50
Typical Output Characteristics ID=f(VDS):80 s pulse test,Tch=25 C
100
40
80
PD [W]
60
ID [A]
30
20V 10V 8V 7V
20 40 6.5V 10 20 VGS=6.0V
0 0 25 50 75 100 125 150
0 0 4 8 12 16 20 24
Tc [C]
VDS [V]
100
Typical Transfer Characteristic ID=f(VGS):80 s pulse test,VDS=25V,Tch=25C
100
Typical Transconductance gfs=f(ID):80 s pulse test,VDS=25V,Tch=25C
10 10
ID[A]
1 1
0.1 0.1 0.1
0
1
2
3
4
5
6
7
8
9
10
gfs [S]
1
10
100
VGS[V]
ID [A]
1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0
Typical Drain-Source on-state Resistance RDS(on)=f(ID):80 s pulse test,Tch=25C
VGS=6V 6.5V
1.5 1.4 1.3
Drain-Source On-state Resistance RDS(on)=f(Tch):ID=8A,VGS=10V
7V 8V 10V 20V
1.2 1.1
RDS(on) [ ]
RDS(on) [ ]
1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 typ. max.
0
10
20
30
0.0 -50 -25 0 25 50 75 100 125 150
ID [A]
Tch [C]
2
2SK3687-01MR
FUJI POWER MOSFET
7.0 6.5 6.0 5.5 5.0
Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=250A
14
Typical Gate Charge Characteristics VGS=f(Qg):ID=16A,Tch=25 C
12 Vcc= 120V max. 10 480V 300V
VGS(th) [V]
4.5
3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 min.
VGS [V]
4.0
8
6
4
2
0 0 10 20 30 40 50 60
Tch [C]
Qg [nC]
10
4
Typical Capacitance C=f(VDS):VGS=0V,f=1MHz
100
Typical Forward Characteristics of Reverse Diode IF=f(VSD):80 s pulse test,Tch=25 C
Ciss 10
3
10
C [pF]
10
2
Coss
IF [A]
1 10
3
10
1
Crss
10
0
10
0
10
1
10
2
0.1 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.50
VDS [V]
VSD [V]
10
3
Typical Switching Characteristics vs. ID t=f(ID):Vcc=300V,VGS=10V,RG=10
700
Maximum Avalanche Energy vs. starting Tch E(AV)=f(starting Tch):Vcc=60V,I(AV)<=16A
600
IAS=7A
500 10
2
td(off) td(on)
EAV [mJ]
400
IAS=10A
t [ns]
300 IAS=16A 200
10
1
tr
tf
100
10
0
10
-1
10
0
10
1
10
2
0 0 25 50 75 100 125 150
ID [A]
starting Tch [C]
3
2SK3687-01MR
FUJI POWER MOSFET
10
Maximum Avalanche Current Pulsewidth I =f(tAV):starting Tch=25C,Vcc=50V 2 AV
Avalanche Current I AV [A]
Single Pulse
1
10
10
0
10
-1
10 -8 10
-2
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
tAV [sec]
10
1
Maximum Transient Thermal Impedance Zth(ch-c)=f(t):D=0
10
0
Zth(ch-c) [C/W]
10
-1
10
-2
10
-3
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
t [sec]
http://www.fujielectric.co.jp/fdt/scd/
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