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Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4056 DESCRIPTION With ITO-220 package Switching power transistor PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (ITO-220) and symbol DESCRIPTION Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM PT Tj Tstg Collector-base voltage Collector-emitter voltage PARAMETER CONDITIONS Open emitter Open base CHA IN Collector current Base current Base current-peak Emitter-base voltage E SEM NG Open collector DUC CON I VALUE 600 TOR 7 8 16 4 8 UNIT V V V A A A A W ae ae 450 Collector current-Peak Total power dissipation Junction temperature Storage temperature TC=25ae 45 150 -55~150 THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction case MAX 2.77 UNIT ae /W Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4056 CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current At rated volatge ICEO IEBO hFE-1 hFE-2 fT ton ts tf Collector cut-off current Emitter cut-off current DC current gain DC current gain At rated volatge IC=4A ; VCE=5V IC=1mA ; VCE=5V IC=0.8A ; VCE=10V 10 5 0.1 mA 0.1 mA CONDITIONS IC=0.2A ;IB=0 IC=4A; IB=0.8A IC=4A; IB=0.8A MIN 450 1.0 1.5 TYP. MAX UNIT V V V SYMBOL VCEO(SUS) VCEsat VBEsat ICBO Fall time Transition frequency Turn-on time Storage time INC E SEM ANG H OND IC TOR UC 20 0.5 2.0 0.2 MHz |I |I |I s s s IC=4A;IB1=0.8A IB2=1.6A ,RL=37.5| VBB2=4V 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC4056 CHA IN E SEM NG OND IC TOR UC Fig.2 Outline dimensions (unindicated tolerance:A 0.20 mm) 3 |
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