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| Datasheet File OCR Text: |
| INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC2757 DESCRIPTION *Low Noise *High Current-Gain Bandwidth Product APPLICATIONS *Designed for use in VHF RF amplifier, local oscillator, mixer. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 15 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 50 mA PC Collector Power Dissipation @TC=25 0.15 W TJ Junction Temperature 125 Tstg Storage Temperature Range -55~125 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC2757 TYP. MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= 10mA ; IB= 1mA 0.5 V ICBO Collector Cutoff Current VCB= 12V; IE= 0 0.1 A hFE DC Current Gain IC= 5mA ; VCE= 10V 60 240 fT Current-Gain--Bandwidth Product IC= 5mA ; VCE= 10V 800 1100 MHz COB Output Capacitance IE= 0 ; VCB= 10V;f= 1.0MHz 1.5 pF rbb' * CC Base Time Constant IC= 5mA ; VCB= 10V;f= 31.9MHz 10 15 ps hFE Classifications Marking hFE T32 60-120 T33 90-180 T34 120-240 isc Websitewww.iscsemi.cn 2 |
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