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SMD Type Silicon PNP Epitaxial Planar Type 2SB710A Transistors IC SOT-23 Unit: mm Features Large collector current IC. +0.1 2.4-0.1 +0.1 2.9-0.1 +0.1 0.4-0.1 insertion through the tape packing and the magazine packing. +0.1 1.3-0.1 Mini type package, allowing downsizing of the equipment and automatic 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating -60 -50 -5 -0.5 -1 200 150 -55 to +150 Unit V V V A A mW Electrical Characteristics Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector-base cutoff current Forward current transfer ratio Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Symbol VCBO VCEO VEBO ICBO hFE Testconditons IC = -10 iA, IE = 0 IC = -10 mA, IB = 0 IE = -10 iA, IC = 0 VCB = -20 V, IE = 0 VCE = -10 V, IC = -150 mA 85 -0.35 -1.1 200 6 15 Min -60 -50 -5 -0.1 340 -0.6 -1.5 V V MHz pF Typ Max Unit V V V A VCE(sat) IC = -300 mA, IB = -30 mA VBE(sat) IC = -300 mA, IB = -30 mA fT Cob VCB = -10 V, IE = 50 mA , f = 200 MHz VCB = -10V , IE = 0 , f = 1.0MHz hFE Classification Marking hFE DQ 85 170 DR 120 240 DS 170 340 +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1 |
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