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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor MJ10002 DESCRIPTION *Collector-Emitter Sustaining Voltage: VCEO(SUS)= 350V (Min.) *High Switching Speed APPLICATIONS Designed for high voltage, high speed , power switching in Inductive circuits where fall time is critical. They are particularly suited for line operated switch-mode applications as: *Switching Regulators *Inverters *Solenoid and Relay Drivers *Motor Controls *Deflection Circuits ABSOLUTE MAXIMUM RATINGS (Ta=25) SYMBOL VCEO(SUS) VCEX(SUS) VCEV VEBO IC ICM IB B PARAMETER Collector-Emitter Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continunous Collector Current-Peak Base Current-Continunous Base Current-Peak Collector Power Dissipation @TC=25 Junction Temperature Storage Temperature Range VALUE 350 400 450 8 10 20 2.5 5.0 150 200 -65~200 UNIT V V V V A A A A W IBM PC Tj Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case MAX 1.17 UNIT /W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MJ10002 TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.25A; IB= 0 IC= 5A; IB= 0.25A IC= 5A; IB= 0.25A, TC= 100 B B 350 1.9 2.0 2.9 2.5 2.5 0.25 5.0 5.0 V VCE(sat)-1 Collector-Emitter Saturation Voltage V V CE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A; IB= 1A IC= 5A; IB= 0.25A IC= 5A; IB= 0.25A, TC= 100 B B V VBE(sat) Base-Emitter Saturation Voltage V ICEV Collector Cutoff Current VCE=450V;VBE(off)=1.5V VCE=450V;VBE(off)=1.5V;TC=150 VCE= 450V; RBE= 50; TC= 100 mA ICER Collector Cutoff Current mA IEBO Emitter Cutoff Current VEB= 8V; IC= 0 175 mA hFE-1 DC Current Gain IC= 2.5A, VCE= 5V 40 hFE-2 DC Current Gain IC= 5A, VCE= 5V 30 VECF C-E Diode Forward Voltage IF= 5A 5.0 V COB Output Capacitance IE= 0, VCB= 50V; ftest= 0.1MHz 60 275 pF Switching Times; Resistive Load td tr ts tf Delay Time Rise Time Storage Time Fall Time 0.05 0.25 1.2 0.6 0.2 0.6 3.0 1.5 s s s s VCC= 250V; IC= 5A; IB1= 0.25A VBE(off)= 5V tp= 50s, Duty Cycle2% isc Websitewww.iscsemi.cn |
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