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SMD Type
Digital FET, N-Channel KDV303N
MOSFET IC
SOT-23
Features
0.68 A, 25 V. RDS(ON) = 0.45 @ VGS = 4.5 V
+0.1 2.4-0.1
Unit: mm
+0.1 2.9-0.1 +0.1 0.4-0.1
Very low level gate drive requirements allowing direct operation in 3V circuits. VGS(th) < 1.5V. Gate-Source Zener for ESD ruggedness. 6kV Human Body Model
D
+0.1 1.3-0.1
RDS(ON) = 0.6 @ VGS = 2.7 V.
1
+0.1 0.95-0.1 +0.1 1.9-0.1
2
0.55
0.4
3
+0.05 0.1-0.01
+0.1 0.97-0.1
1.Base 1. Gate 2.Emitter 2. Source
G
S
+0.1 0.38-0.1
0-0.1
3. Drain 3.collector
Absolute Maximum Ratings Ta = 25
Parameter Drain to Source Voltage Gate to Source Voltage Drain Current- Continuous Drain Current- pulse Power Dissipation for Single Operation Operating and Storage Junction Temperature Range Thermal Resistance, Junction-to- Ambient PD TJ, Tstg RJA Symbol VDSS VGSS ID Rating 25 8 0.68 2 0.35 -55 to +150 357 Unit V V A A W /W
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1
SMD Type
KDV303N
Electrical Characteristics Ta = 25
Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current,Forward Gate-Body Leakage Current,Reverse Gate Threshold Voltage * Symbol VDSS IDSS IGSSF IGSSR VGS(th) Testconditons VGS = 0 V, ID = 250 A VDS =20 V, VGS = 0 V VDS =20 V, VGS = 0 V,TJ=55 VGS = 8V, VDS = 0 V VGS = -8 V, VDS = 0 V VDS = VGS, ID = 250 A VGS = 4.5V, ID =0.5A Static Drain-Source On-Resistance* RDS(on) VGS = 4.5V, ID = 0.2A, TJ =125 VGS = 2.7V, ID =0.2 A On-State Drain Current * Forward Transconductance * Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode ForwardVoltage ID(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS VSD VGS = 0 V, IS = 0.5 A VDS = 5 V, ID = 0.5A, VGS = 4.5V, VGS = 2.7 V, VDS =5 V VDS = 5V, ID = 0.5 A VDS = 10 V, VGS = 0 V, f = 1.0 MHz VDD = 6V, ID =0.5A, VGS = 4.5V, RGEN = 50 0.5 0.65 Min 25
MOSFET IC
Typ
Max
Unit V
1 10 100 -100 0.8 0.33 0.52 0.44 1.5 0.45 0.8 0.6
A A nA nA V A
1.45 50 28 9 3 8.5 17 13 1.64 0.38 0.45 0.3 0.83 1.2 6 18 30 25 2.3
S pF pF pF ns ns ns ns nC nC nC A V
* Pulse Test: Pulse Width 300s, Duty Cycle 2.0%.
2
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SMD Type
KDV303N
Typical Characteristics
I D , DRAIN-SOURCE CURRENT (A) 1.5
R DS(on) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE
MOSFET IC
1.2
VGS = 4.5V 3.5 3.0 2.7
2
2.5 2.0
VGS = 2.0V
1.5
0.9
2.5 2.7 3.0 3.5 4.5
0.6
1
0.3
1.5
0
0.5 0 0.5 1 1.5 2 VDS , DRAIN-SOURCE VOLTAGE (V)
0
0.2
0.4
0.6
0.8
1
1.2
I D , DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
1.6 DRAIN-SOURCE ON-RESISTANCE
2
I D =0.5 A
R DS(on) , ON-RESISTANCE (OHM)
ID= 0.5A
1.6
R DS(ON), NORMALIZED
1.4
VGS = 4.5 V
1.2
1.2
1
0.8
125C
0.4
0.8
25C
0.6 -50
0
-25
0 25 50 75 100 TJ , JUNCTION TEMPERATURE (C)
125
150
1
1.5
2 2.5 3 3.5 4 VGS , GATE TO SOURCE VOLTAGE (V)
4.5
5
Figure 3. On-Resistance Variation
with Temperature.
Figure 4. On Resistance Variation with
Gate-To- Source Voltage.
1 IS , REVERSE DRAIN CURRENT (A)
V DS = 5.0V
ID , DRAIN CURRENT (A) 0.8
T = -55C J
25C 125C
1
V GS = 0V
0.1
TJ = 125C 25C
0.6
0.4
0.01
-55C
0.2
0.001
0
0
0.5
1
1.5
2
2.5
0.0001
VGS , GATE TO SOURCE VOLTAGE (V)
0
0.2
0.4
0.6
0.8
1
1.2
VSD , BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
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SMD Type
KDV303N
MOSFET IC
5 V GS , GATE-SOURCE VOLTAGE (V)
I D = 0.5A
VDS = 5V 10V
CAPACITANCE (pF)
150 100
4
15V
50
Ciss Coss
3
2
20
10
f = 1 MHz V GS = 0V
1
5 0.1
C rss
0
0.5 V
DS
1
2
5
10
25
0
0.4
0.8
1.2
1.6
2
, DRAIN TO SOURCE VOLTAGE (V)
Q g , GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
5 3 I D , DRAIN CURRENT (A) 1
IT IM )L ON S( RD
5
1m s 10m s
0m
POWER (W)
4
10
1s
SINGLE PULSE R JA =357 C/W T A = 25C
s
3
0.3
10
0.1
s
2
0.03 0.01 0.1
V GS = 4.5V SINGLE PULSE R JA =357C/W TA = 25C
0.2 0.5 V
DS
DC
1
1
2
5
10
20
40
0 0.001
0.01
0.1
1
10
100
300
, DRAI N-SOURCE VOLTAGE (V)
SINGLE PULSE TIME (SEC)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power Dissipation.
r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE
1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 0.002 0.001 0.0001 0.001 0.01 0.1 t1 , TIME (sec) 1
D = 0.5 0.2 0.1 0.05 0.02 0.01 Single Pulse P(pk)
R JA (t) = r(t) * R JA R JA = 357 C/W
t1
t2
TJ - TA = P * R JA(t) Duty Cycle, D = t1 /t2
10 100 300
Figure 11. Transient Thermal Response Curve.
4
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