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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUS13 DESCRIPTION With TO-3 package High voltage ,high speed APPLICATIONS Converters Inverters Switching regulators Motor controls PINNING (See Fig.2) PIN 1 2 3 Base Emitter Fig.1 simplified outline (TO-3) and symbol Collector DESCRIPTION Absolute maximum ratings(Ta=ae ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM PT Tj Tstg PARAMETER Open emitter CONDITIONS Collector-base voltage Collector-emitter voltage IN Emitter-base voltage Collector current HAN C SEM GE Open base Open collector OND IC TOR UC MAX 850 400 9 15 30 6 9 UNIT V V V A A A A W ae ae Collector current-Peak Base current Base current-Peak Total power dissipation Junction temperature Storage temperature Tmb=25ae 175 200 -65~200 THERMAL CHARACTERISTICS SYMBOL Rth j-mb PARAMETER Thermal resistance from junction to mounting base VALUE 1.0 UNIT ae /W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=0.1A ; IB=0; L=25mH IC=8A; IB=1.6A IC=8A; IB=1.6A VCE=RatedBVCEO; VBE=0 TC=125ae VEB=9V; IC=0 IC=2A ; VCE=5V 15 MIN 400 TYP. BUS13 SYMBOL VCEO(SUS) VCEsat VBEsat ICES IEBO hFE MAX UNIT V 1.5 1.6 1.0 4.0 10 50 V V mA mA Switching times ton ts tf Turn-on time Storage time Fall time IC=8A; IB1=- IB2=1.6A IN ANG CH EMIC ES OND TOR UC 1.0 |I 4.0 0.8 |I s |I s s 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BUS13 SEM GE HAN INC OND IC TOR UC Fig.2 Outline dimensions 3 |
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