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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC792 DESCRIPTION With TO-3 package High breakdown voltage APPLICATIONS For voltage regulator,inverter,switching mode power supply applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=ae ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER ANG CH Collector-base voltage IN Collector-emitter voltage EMIC ES Open emitter Open base Open collector CONDITIONS OND TOR UC VALUE 400 300 5 1.5 UNIT V V V A W ae ae Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25ae 50 150 -55~150 Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER CONDITIONS MIN TYP. 2SC792 SYMBOL MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;IB=0 300 V V(BR)EBO VCEsat Emitter-base breakdown voltage IE=1mA ;IC=0 IC=1.5A; IB=0.3A 5 V Collector-emitter saturation voltage 5.0 V VBEsat Base-emitter saturation voltage IC=1.5A; IB=0.3A 1.5 V ICBO Collector cut-off current VCB=300V; IE=0 50 |I A IEBO Emitter cut-off current VEB=5V; IC=0 50 |I A hFE DC current gain fT Transition frequency ANG CH IC=0.3A ; VCE=10V 30 200 IC=0.1A ; VCE=10V IN EMIC ES DUC ON 10 TOR MHz 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC792 SEM GE HAN INC OND IC TOR UC Fig.2 outline dimensions (unindicated tolerance:A 0.1mm) 3 |
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