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| SMD Type NPN Silicon Epitaxial Transistor 2SC2223 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors IC Unit: mm +0.1 2.4-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 High gain bandwidth product fT=600MHz TYP Low output capacitance. Cob=1.0PF TYP 0.55 Micro package. +0.1 1.3-0.1 Features 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Total power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC PT Tj Tstg Rating 30 20 4 20 150 125 -55 to +125 Unit V V V mA mW Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current gain Base-emitter voltage Collector-emitter saturation voltage Gain bandwidth product Output capacitance Collector to base time constant Noise figure Symbol ICBO IEBO hFE VBE Testconditons VCB = 25V, IE=0 VEB = 3.0V, IC=0 VCE = 6.0V , IC = 1mA IC = 10mA , IB = 1.0mA 40 90 0.72 0.1 400 600 1.0 12 3 0.3 Min Typ Max 100 100 180 V V MHz pF ps dB Unit nA nA VCE(sat) IC = 10mA , IB = 1.0mA fT Cob Cc-rb'b NF VCE = 6.0V , IE = -1.0mA VCB = 6.0V , IE = 0 , f = 1.0MHz VCE = 6.0V, IE = -1.0mA, f = 31.9MHz VCE = 6.0V, IE = -1.0mA, RG = 50U, f = 100MHz hFE Classification Marking hFE F12 40 80 F13 60 120 F14 90 180 +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1 |
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