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| INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors 2SB613 DESCRIPTION *Collector-Emitter Breakdown Voltage: V(BR)CEO= -250V(Min) *High Power Dissipation: PC= 150W(Max)@TC=25 *High Current Capability *Complement to Type 2SD583 APPLICATIONS *Designed for high power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VCBO VCEO VEBO IC IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Base Current Collector Power Dissipation @TC=25 Junction Temperature Storage Temperature VALUE -250 -250 -5 -15 -5 150 200 -65~200 UNIT V V V A A W PC TJ Tstg isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors ELECTRICAL CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCE(sat) ICBO IEBO hFE PARAMETER Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain CONDITIONS IC= -50mA ; IB= 0 IC= -1mA ;IE= 0 IE=-1mA ;IC=0 IC= -10A; IB= -1A VCB= -250V; IE= 0 VEB= -5V; IC= 0 IC= -1A ; VCE= -2V 35 MIN -250 -250 -5 2SB613 MAX UNIT V V -3.0 -0.1 -0.1 200 V mA mA isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors 2SB613 isc Websitewww.iscsemi.cn |
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