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 Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA1094
DESCRIPTION *With MT-200 package *Complement to type 2SC2564 APPLICATIONS *For power amplifier applications
PINNING(see Fig.2) PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (MT-200) and symbol DESCRIPTION
Absolute maximum ratings(Ta=25)
SYMBOL VCBO VCEO VEBO IC IB
B
PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25
CONDITIONS Open emitter Open base Open collector
VALUE -140 -140 -5 -12 -1.2 120 150 -55~150
UNIT V V V A A W
PC Tj Tstg
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified SYMBOL V(BR)CEO V(BR)EBO VCEsat VBE ICBO IEBO hFE-1 hFE-2 Cob fT PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Output capacitance Transition frequency CONDITIONS IC=-0.1A ; IB=0
B
2SA1094
MIN -140 -5
TYP.
MAX
UNIT V V
IE=-0.01A ; IC=0 IC=-5A ;IB=-0.5A
B
-2.0 -2.0 -50 -50 55 30 220 70 240
V V A A
IC=-5A ; VCE=-5V VCB=-140V; IE=0 VEB=-5V; IC=0 IC=-1A ; VCE=-5V IC=-5A ; VCE=-5V IE=0 ; VCB=-10V;f=1MHz IC=-1A ; VCE=-10V
pF MHz
hFE-1 classifications R 55-110 O 80-160 Y 120-240
2
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SA1094
Fig.2 outline dimensions
3


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