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 SI1488DH
New Product
Vishay Siliconix
N-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) rDS(on) () 0.049 at VGS = 4.5 V 20 0.056 at VGS = 2.5 V 0.065 at VGS = 1.8 V ID (A) 6.1a 5.7 5.3 6.0 Qg (Typ)
FEATURES
* TrenchFET(R) Power MOSFET * 100 % Rg & UIS Tested
APPLICATIONS
* Load Switch for Portable Devices
RoHS
COMPLIANT
SOT-363 SC-70 (6-LEADS)
D 1 6 D Marking Code AG XX YY D 2 5 D G Lot Traceability and Date Code Part # Code
D
G
3
4
S
S Top View Ordering Information: SI1488DH-T1-E3 (Lead (Pb)-free) N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise noted
Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 C TC = 70 C TA = 25 C TA = 70 C Symbol VDS VGS Limit 20 8 6.1 4.9 4.6b, c 3.7b, c 20 10 5 2.3 1.3b, c 2.8 1.8 1.5b, c 1.0b, c - 55 to 150 Unit V
Continuous Drain Current (TJ = 150 C)a
ID
A
Pulsed Drain Current Avalanche Current Repetitive Avalanche Energy Continuous Source-Drain Diode Current
L = 0.1 mH TC = 25 C TA = 25 C TC = 25 C TC = 70 C TA = 25 C TA = 70 C
IDM IAS EAS IS
mJ A
Maximum Power Dissipationa
PD
W
Operating Junction and Storage Temperature Range
TJ, Tstg
C
THERMAL RESISTANCE RATINGS
Parameter Maximum Junction-to-Ambientb, d Maximum Junction-to-Foot (Drain) Notes: a. Based on TC = 25 C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 5 sec. d. Maximum under Steady State conditions is 125 C/W. Document Number: 73788 S-61085-Rev. C, 19-Jun-06 www.vishay.com 1 t 5 sec Steady State Symbol RthJA RthJF Typical 60 34 Maximum 80 45 Unit C/W
SI1488DH
Vishay Siliconix
SPECIFICATIONS TJ = 25 C, unless otherwise noted
Parameter Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Currenta VDS VDS/TJ VGS(th)/ TJ VGS(th) IGSS IDSS ID(on) rDS(on) gfs Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf IS ISM VSD trr Qrr ta tb IF = 3.2 A, di/dt = 100 A/s IS = 2.2 A 0.8 10.6 3.7 6.2 4.4 TC = 25 C VDD = 10 V, RL = 2.7 ID 3.7 A, VGEN = 4.5 V, Rg = 1 f = 1 MHz VDS = 10 V, VGS = 5 V, ID = 4.6 A VDS = 10 V, VGS = 4.5 V, ID = 4.6 A VDS = 10 V, VGS = 0 V, f = 1 MHz VGS = 0 V, ID = 250 A ID = 250 A VDS = VGS, ID = 250 A VDS = 0 V, VGS = 8 V VDS = 20 V, VGS = 0 V VDS = 20 V, VGS = 0 V, TJ = 85 C VDS = 5 V, VGS = 4.5 V VGS = 4.5 V, ID = 4.6 A VGS = 2.5 V, ID = 4.3 A VGS = 1.8 V, ID = 3.9 A Forward Transconductance Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off DelayTime Fall Time Drain-Source Body Diode Characteristics Continous Source-Drain Diode Current Pulse Diode Forward Body Diode Voltage Currenta 2.3 20 1.2 16 5.7 ns A V nC
b
Symbol
Test Conditions
Min 20
Typ
Max
Unit V
20.2 - 2.75 0.45 0.95 100 1 10 20 0.041 0.047 0.054 15 530 100 48 6.6 6 1.5 0.9 7.3 8.5 45 35 82 11 13 68 53 123 ns 10 9 pC pF 0.049 0.056 0.065 mS mV/C V nA A A A
Drain-Source On-State Resistancea
VDS = 10 V, ID = 4.6 A
Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Fall Time Reverse Recovery Rise Time
Notes: a. Pulse test; pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
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Document Number: 73788 S-61085-Rev. C, 19-Jun-06
SI1488DH
Vishay Siliconix
TYPICAL CHARACTERISTICS
20 VGS = 5 V thru 2.5 V VGS = 2 V 15 I D - Drain Current (A) I D - Drain Current (A) 4
TA = 25 C, unless otherwise noted
5
3
10 VGS = 1.5 V
2 TJ = 25 C 1 TJ = 125 C TJ = - 55 C 0 0.0
5
VGS = 1 V 0 0.0 0.6 1.2 1.8 2.4 3.0
0.4
0.8
1.2
1.6
2.0
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
0.09 800
Transfer Characteristics curves vs. Temp
rDS(on) - On-Resistance ( )
0.08 C - Capacitance (pF) 600 Ciss
0.07
VGS = 1.8 V
0.06 VGS = 2.5 V 0.05
400
200 0.04 VGS = 4.5 V 0 0 4 8 12 16 20 0 Crss 4 8 12 16 20 Coss
0.03
ID - Drain Current (A)
VDS - Drain-Source Voltage (V)
On-Resistance vs. Drain Current
5 ID = 4.6 A V GS - Gate-to-Source Voltage (V) 4 VDS = 10 V rDS(on) - On-Resistance (Normalized) 1.4 3 VDS = 16 V 2 1.6 1.8
Capacitance
VGS = 2.5 V, ID = 4.3 A VGS = 1.8 V, ID = 3.9 A
1.2 VGS = 4.5 V, ID = 4.6 A
1.0
1
0.8 0 0 2 4 6 8
0.6 - 50
- 25
0
25
50
75
100
125
150
Qg - Total Gate Charge (nC)
TJ - Junction Temperature ( C)
Qg - Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 73788 S-61085-Rev. C, 19-Jun-06
www.vishay.com 3
SI1488DH
Vishay Siliconix
TYPICAL CHARACTERISTICS TA = 25 C, unless otherwise noted
20 10 0.12 ID = 4.6 A rDS(on) - On-Resistance () 0.09
I S - Source Current (A)
1
TJ = 150 C 0.1
TJ = 25 C
0.06 TA = 125 C TA = 25 C 0.03
0.01
0.001 0.0
0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 1 2 3 4 5
VSD - Source-to-Drain Voltage (V)
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
1.0 30 25 0.8 V GS(th) Variance (V) ID = 250 A 0.6 Power (W) 20
rDS(on) vs VGS vs Temperature
15
0.4
10 0.2
5
0.0 - 50
- 25
0
25
50
75
100
125
150
0 0.001
0.01
0.1
1 Time (sec)
10
100
600
TJ - Temperature (C)
Threshold Voltage
100 * Limited by r DS(on) 10 I D - Drain Current (A) 1 ms 10 ms 1 100 ms 1s 10 s 0.1 BVDSS Limited 0.01 TA = 25 C Single Pulse 0.001 0.1 1 10 100 dc
Single Pulse Power
VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which rDS(on) is specified
Safe Operating Area, Junction-to-Ambient
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Document Number: 73788 S-61085-Rev. C, 19-Jun-06
SI1488DH
Vishay Siliconix
TYPICAL CHARACTERISTICS
8
TA = 25 C, unless otherwise noted
3.5
2.8 6 ID - Drain Current (A) Power Dissipation (W) 2.1
Package Limited 4
1.4
2
0.7
0 0 25 50 75 100 125 150
0.0 0 25 50 75 100 125 150
TC - Case Temperature ( C)
T C - Case Temperature (C)
Current Derating*
Power Derating
* The power dissipation PD is based on TJ(max) = 150 C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit.
Document Number: 73788 S-61085-Rev. C, 19-Jun-06
www.vishay.com 5
SI1488DH
Vishay Siliconix
TYPICAL CHARACTERISTICS TA = 25 C, unless otherwise noted
2 1 Duty Cycle = 0.5
Normalized Effective Transient Thermal Impedance
0.2
Notes:
0.1 0.1 0.05 0.02
t1 t2 1. Duty Cycle, D = t1 t2 PDM
2. Per Unit Base = RthJA = 100 C/W
Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (sec)
3. TJM - TA = PDMZthJA(t) 4. Surface Mounted
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient
2 1 Duty Cycle = 0.5
Normalized Effective Transient Thermal Impedance
0.2 0.1 0.1 0.05 0.02 Single Pulse
0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (sec) 1 10
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?73788.
www.vishay.com 6
Document Number: 73788 S-61085-Rev. C, 19-Jun-06
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 Revision: 18-Jul-08
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