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| FDS4141 P-Channel PowerTrench(R) MOSFET November 2007 FDS4141 P-Channel PowerTrench(R) MOSFET -40V, -10.8A, 13.0m Features Max rDS(on) = 13.0m at VGS = -10V, ID = -10.5A Max rDS(on) = 19.0m at VGS = -4.5V, ID = -8.4A High performance trench technology for extremely low rDS(on) RoHS Compliant General Description This P-Channel MOSFET has been produced using Fairchild Semiconductor's proprietary PowerTrench(R) technology to deliver low rDS(on) and optimized BVDSS capability to offer superior performance benefit in the applications and optimized switching performance capability reducing power dissipation losses in converter/inverter applications. Applications Control switch in synchronous & non-synchronous buck Load switch Inverter D D D D D D G S S Pin 1 S D D 5 6 7 8 4 3 2 1 G S S S SO-8 MOSFET Maximum Ratings TA = 25C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Single Pulse Avalanche Energy Power Dissipation Power Dissipation TA = 25C TA = 25C (Note 3) (Note 1a) (Note 1b) Ratings -40 20 -10.8 -36 294 5 2.5 -55 to +150 Units V V A mJ W C Operating and Storage Junction Temperature Range Thermal Characteristics RJC RJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient (Note 1) (Note 1a) 25 50 C/W Package Marking and Ordering Information Device Marking FDS4141 Device FDS4141 Package SO-8 Reel Size 13'' Tape Width 12mm Quantity 2500units (c)2007 Fairchild Semiconductor Corporation FDS4141 Rev.C 1 www.fairchildsemi.com FDS4141 P-Channel PowerTrench(R) MOSFET Electrical Characteristics TJ = 25C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS BVDSS TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = -250A, VGS = 0V ID = -250A, referenced to 25C VDS = -32V, VGS = 20V, VDS = 0V -40 -33 -1 100 V mV/C A nA On Characteristics VGS(th) VGS(th) TJ rDS(on) gFS Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = -250A ID = -250A, referenced to 25C VGS = -10V, ID = -10.5A VGS = -4.5V, ID = -8.4A VGS = -10V, ID = -10.5A, TJ= 125C VDD = -5V, ID = -10.5A -1.0 -1.6 5.3 11.0 15.2 16.8 37 13.0 19.0 19.9 S m -3.0 V mV/C Dynamic Characteristics Ciss Coss Crss Rg Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VDS = -20V, VGS = 0V, f = 1MHz f = 1MHz 2005 355 190 5 2670 475 285 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qg Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Total Gate Charge Gate to Source Charge Gate to Drain "Miller" Charge VGS = 0V to -10V VGS = 0V to -5V VDD = -20V, ID = -10.5A VDD = -20V, ID = -10.5A, VGS = -10V, RGEN = 6 10 5 42 12 35 19 6 7 20 10 68 22 49 27 ns ns ns ns nC nC nC nC Drain-Source Diode Characteristics VSD trr Qrr Source to Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, IS = -10.5A VGS = 0V, IS = -2.1A (Note 2) (Note 2) -0.8 -0.7 26 14 -1.3 -1.2 42 26 V ns nC IF = -10.5A, di/dt = 100A/s NOTES: 1. RJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RJC is guaranteed by design while RCA is determined by the user's board design. a) 50C/W when mounted on a 1in2 pad of 2 oz copper. b) 125C/W when mounted on a minimum pad. 2. Pulse Test: Pulse Width < 300s, Duty cycle < 2.0%. 3. UIL condition: Starting TJ = 25C, L = 3mH, IAS = -14A, VDD = -40V, VGS = -10V. (c)2007 Fairchild Semiconductor Corporation FDS4141 Rev.C 2 www.fairchildsemi.com FDS4141 P-Channel PowerTrench(R) MOSFET Typical Characteristics TJ = 25C unless otherwise noted 36 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE VGS = -3.5V VGS = -4V VGS = - 4.5V VGS = -10V 4.0 3.5 VGS = -3V PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX -ID, DRAIN CURRENT (A) 27 3.0 2.5 2.0 1.5 1.0 0.5 0 9 18 27 36 -ID, DRAIN CURRENT(A) VGS = - 4.5V VGS = -10V VGS = -3.5V VGS = -4V 18 VGS = -3V 9 PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX 0 0 1 2 3 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 50 1.8 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE SOURCE ON-RESISTANCE (m) 1.6 1.4 ID = -10.5A VGS = -10V ID = -10.5A PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX 40 30 20 10 TJ = 25oC TJ = 125oC 1.2 1.0 0.8 0.6 -75 rDS(on), DRAIN TO 0 -50 -25 0 25 50 75 100 125 150 o 2 4 6 8 10 TJ, JUNCTION TEMPERATURE ( C) -VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On- Resistance vs Junction Temperature 36 PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX -IS, REVERSE DRAIN CURRENT (A) Figure 4. On-Resistance vs Gate to Source Voltage 100 VGS = 0V 10 1 0.1 0.01 TJ = -55oC TJ = 150oC TJ = 25oC -ID, DRAIN CURRENT (A) 27 VDS = -5V TJ = 150oC 18 TJ = 25oC 9 TJ = -55oC 0 0 1 2 3 4 0.001 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VGS, GATE TO SOURCE VOLTAGE (V) -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current (c)2007 Fairchild Semiconductor Corporation FDS4141 Rev.C 3 www.fairchildsemi.com FDS4141 P-Channel PowerTrench(R) MOSFET Typical Characteristics TJ = 25C unless otherwise noted 10 -VGS, GATE TO SOURCE VOLTAGE(V) ID = -10.5A 5000 Ciss VDD = -20V 8 CAPACITANCE (pF) 6 VDD = -15V VDD = -25V 1000 Coss 4 2 0 0 5 10 15 20 25 30 35 40 Qg, GATE CHARGE(nC) Crss 100 60 0.1 f = 1MHz VGS = 0V 1 10 40 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage 12 -ID, DRAIN CURRENT (A) 20 -IAS, AVALANCHE CURRENT(A) 10 9 VGS = -10V TJ = 25oC TJ = 125oC 6 VGS = -4.5V 3 RJA = 50 C/W o 1 0.01 0.1 1 10 100 500 0 25 50 75 100 o 125 150 tAV, TIME IN AVALANCHE(ms) TA, AMBIENT TEMPERATURE ( C) Figure 9. Unclamped Inductive Switching Capability 100 P(PK), PEAK TRANSIENT POWER (W) Figure 10. Maximum Continuous Drain Current vs Ambient Temperature 2000 1000 VGS = -10V SINGLE PULSE RJA = 125oC/W TA = 25oC -ID, DRAIN CURRENT (A) 10 1ms 100 1 10ms THIS AREA IS LIMITED BY rDS(on) 100ms 1s 10s DC 10 0.1 SINGLE PULSE TJ = MAX RATED RJA = 125oC/W TA = 25oC 0.01 0.01 0.1 1 10 100 200 1 0.5 -4 10 10 -3 10 -2 10 -1 1 10 100 1000 -VDS, DRAIN to SOURCE VOLTAGE (V) t, PULSE WIDTH (sec) Figure 11. Forward Bias Safe Operating Area Figure 12. Single Pulse Maximum Power Dissipation (c)2007 Fairchild Semiconductor Corporation FDS4141 Rev.C 4 www.fairchildsemi.com FDS4141 P-Channel PowerTrench(R) MOSFET Typical Characteristics TJ = 25C unless otherwise noted 2 1 NORMALIZED THERMAL IMPEDANCE, ZJA DUTY CYCLE-DESCENDING ORDER 0.1 0.01 D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 0.001 SINGLE PULSE RJA = 125 C/W o NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJA x RJA + TA 0.0001 -4 10 10 -3 10 -2 10 -1 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Transient Thermal Response Curve (c)2007 Fairchild Semiconductor Corporation FDS4141 Rev.C 5 www.fairchildsemi.com Preliminary Datasheet FDS4141 P-Channel PowerTrench(R) MOSFET TRADEMARKS The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx(R) Build it NowTM CorePLUSTM CROSSVOLTTM CTLTM Current Transfer LogicTM EcoSPARK(R) (R) Fairchild(R) Fairchild Semiconductor(R) FACT Quiet SeriesTM FACT(R) FAST(R) FastvCoreTM FPSTM FRFET(R) Global Power ResourceSM Green FPSTM Green FPSTM e-SeriesTM GTOTM i-LoTM IntelliMAXTM ISOPLANARTM MegaBuckTM MICROCOUPLERTM MicroFETTM MicroPakTM MillerDriveTM Motion-SPMTM OPTOLOGIC(R) OPTOPLANAR(R) (R) PDP-SPMTM Power220(R) Power247(R) POWEREDGE(R) Power-SPMTM PowerTrench(R) Programmable Active DroopTM QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM SMART STARTTM SPM(R) STEALTHTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM The Power Franchise(R) TinyBoostTM TinyBuckTM TinyLogic(R) TINYOPTOTM TinyPowerTM TinyPWMTM TinyWireTM SerDesTM UHC(R) UniFETTM VCXTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. tm Rev. I31 Preliminary First Production This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor. The datasheet is printed for reference information only. No Identification Needed Full Production Obsolete Not In Production (c)2007 Fairchild Semiconductor Corporation FDS4141 Rev.C 6 www.fairchildsemi.com |
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