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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor BU910 DESCRIPTION *Collector-Emitter Sustaining Voltage: VCEO(SUS)= 350V(Min) *High Switching Speed APPLICATIONS *Designed for applications such as electronic ignition, DC and AC motor controls, solenoid drivers,etc. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VCBO VCEO VEBO IC ICM IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current Collector Power Dissipation @ TC=25 Junction Temperature Storage Temperature Range VALUE 400 350 5 6 10 1 60 150 -65~150 UNIT V V V A A A W PC TJ Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case MAX 2.08 UNIT /W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. BU910 MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA ;IB= 0 350 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 2.5A; IB= 50mA 1.8 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 4A; IB= 0.2A B 1.8 V VBE(sat)-1 Base-Emitter Saturation Voltage IC= 2.5A; IB= 50mA 2.2 V VBE(sat)-2 Base-Emitter Saturation Voltage IC= 4A; IB= 0.2A B 2.5 1 5 1 V ICES Collector Cutoff Current VCE= 400V; VBE= 0 VCE= 400V; VBE= 0,TC= 125 VCE= 350V; IB= 0 mA ICEO Collector Cutoff Current mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 5 mA VECF C-E Diode Forward Voltage IF= 4A 2.5 V isc Websitewww.iscsemi.cn 2 |
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