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| 2SC5631 Silicon NPN Epitaxial UHF / VHF Wide Band Amplifier REJ03G0128-0300Z (Previous ADE-208-981A(Z)) Rev.3.00 Oct.20.2003 Features * High gain bandwidth product fT = 11 GHz typ. * High power gain and low noise figure ; PG = 10 dB typ. , NF = 1.2 dB typ. at f = 900 MHz Outline UPAK 3 2 1 4 1. Base 2. Collector 3. Emitter 4. Collector Note: Marking is "JR". Rev.3.00, Oct.20.2003, page 1 of 9 2SC5631 Absolute Maximum Ratings (Ta = 25C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC Pc Tj Tstg Ratings 15 6 1.5 80 800* 150 -55 to +150 Unit V V V mA mW C C * When using alumina ceramic board (12.5 x 20 x 0.7 mm) Electrical Characteristics (Ta = 25C) Item Collector to base breakdown voltage Collector cutoff current Collector cutoff current Emitter cutoff current DC current transfer ratio Collector output capacitance Gain bandwidth product Power gain Noise figure Symbol V(BR)CBO ICBO ICEO IEBO hFE Cob fT PG NF Min 15 -- -- -- 80 -- 8 7 -- Typ -- -- -- -- 120 1.6 11 10 1.2 Max -- 1 1 10 160 2.2 -- -- 1.9 Unit V A mA A V pF GHz dB dB Test Conditions IC = 10 A , IE = 0 VCB = 12 V , IE = 0 VCE = 6 V , RBE = VEB = 1.5 V , IC = 0 VCE = 5 V , IC = 50 mA VCB = 5 V , IE = 0 f = 1 MHz VCE = 5 V , IC = 50 mA f = 1 GHz VCE = 5 V , IC = 50 mA f = 900 MHz VCE = 5 V , IC = 5 mA f = 900 MHz Rev.3.00, Oct.20.2003, page 2 of 9 2SC5631 Main Characteristics Collector Power Dissipation Curve DC Current Transfer Ratio vs. Collector Current Pc (mW) 1600 200 DC Current Transfer Ratio 1200 hFE Collector Power Dissipation VCE = 5 V 100 800 3V 400 0 0 50 100 150 Ta (C) 200 1 2 5 10 20 IC 50 (mA) 100 Ambient Temperature Collector Current (pF) 4.0 Collector Output Capacitance vs. Collector to Base Voltage IE = 0 f = 1MHz 20 Gain Bandwidth Product vs. Collector Current Cob (GHz) fT Gain Bandwidth Product 3.2 16 Collector Output Capacitance 2.4 12 8 VCE = 5 V 3V 1.6 0.8 4 0 0.1 0 1 2 5 10 20 IC 50 (mA) 100 0.2 0.5 1 2 5 10 Collector to Base Voltage VCB (V) Collector Current Rev.3.00, Oct.20.2003, page 3 of 9 2SC5631 Power Gain vs. Collector Current 20 f = 900 MHz NF (dB) Noise Figure vs. Collector Current 5 f = 900 MHz 4 16 (dB) PG 12 VCE = 5 V 8 3V 3 VCE = 3 V Power Gain Noise Figure 2 5V 1 4 0 1 0 2 5 10 20 IC 50 (mA) 100 1 2 5 10 20 IC 50 (mA) 100 Collector Current Collector Current 20 |S21|2 (dB) S21Parameter vs. Collector Current f = 1 GHz 16 12 VCE = 5 V 8 3V S21 Parameter 4 0 1 2 5 10 20 IC 50 (mA) 100 Collector Current Rev.3.00, Oct.20.2003, page 4 of 9 2SC5631 S21 Paramter vs. Frequency 90 2 .4 3 .2 4 5 10 0 .2 .4 .6 .8 1 1.5 2 3 45 10 -10 -.2 -5 -4 -3 -.4 -.6 -.8 -1 -1.5 -2 -120 -90 180 0 150 30 120 S11 Parameter vs. Frequency .8 .6 1 1.5 Scale: 6 / div. 60 -150 -30 -60 Condition : VCE = 3 V , IC = 50 mA 100 to 2000 MHz (100 MHz step) Condition : VCE = 3 V , IC = 50 mA 100 to 2000 MHz (100 MHz step) S12 Parameter vs. Frequency 90 120 S22 Parameter vs. Frequency .8 .6 .4 3 1 1.5 2 Scale: 0.1 / div. 60 150 30 .2 4 5 10 180 0 0 .2 .4 .6 .8 1 1.5 2 3 45 10 -10 -.2 -150 -30 -.4 -2 -.6 -.8 -1 -1.5 -5 -4 -3 -120 -60 -90 Condition : VCE = 3 V , IC = 50 mA 100 to 2000 MHz (100 MHz step) Condition : VCE = 3 V , IC = 50 mA 100 to 2000 MHz (100 MHz step) Rev.3.00, Oct.20.2003, page 5 of 9 2SC5631 S21 Paramter vs. Frequency 90 2 .4 3 .2 4 5 10 0 .2 .4 .6 .8 1 1.5 2 3 45 10 -10 -.2 -5 -4 -3 -.4 -.6 -.8 -1 -1.5 -2 -120 -90 180 0 150 30 120 S11 Parameter vs. Frequency .8 .6 1 1.5 Scale: 6 / div. 60 -150 -30 -60 Condition : VCE = 5 V , IC = 50 mA 100 to 2000 MHz (100 MHz step) Condition : VCE = 5 V , IC = 50 mA 100 to 2000 MHz (100 MHz step) S12 Parameter vs. Frequency 90 120 S22 Parameter vs. Frequency .8 .6 .4 3 1 1.5 2 Scale: 0.1 / div. 60 150 30 .2 4 5 10 180 0 0 .2 .4 .6 .8 1 1.5 2 3 45 10 -10 -.2 -150 -30 -.4 -2 -.6 -.8 -1 -1.5 -5 -4 -3 -120 -60 -90 Condition : VCE = 5 V , IC = 50 mA 100 to 2000 MHz (100 MHz step) Condition : VCE = 5 V , IC = 50 mA 100 to 2000 MHz (100 MHz step) Rev.3.00, Oct.20.2003, page 6 of 9 2SC5631 S parameter (VCE = 3V, IC = 50 mA, Zo = 50 ) S11 f (MHz) MAG 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 0.234 0.233 0.234 0.238 0.242 0.249 0.250 0.259 0.267 0.274 0.282 0.290 0.297 0.307 0.318 0.324 0.334 0.345 0.357 0.366 ANG -135.7 -165.2 179.3 170.1 161.2 153.9 145.9 140.4 134.2 128.0 123.5 119.2 114.2 109.6 105.3 101.7 97.7 93.9 91.6 87.9 S21 MAG 26.57 13.47 8.92 6.70 5.37 4.52 3.89 3.43 3.08 2.80 2.58 2.40 2.25 2.12 2.01 1.92 1.83 1.77 1.72 1.65 ANG 109.9 96.1 89.7 84.9 81.2 77.8 74.5 71.4 68.6 65.8 63.2 60.3 57.9 55.9 53.4 51.3 48.6 46.8 44.6 42.6 S12 MAG 0.0299 0.0575 0.0863 0.114 0.142 0.169 0.196 0.223 0.249 0.275 0.299 0.323 0.346 0.367 0.389 0.409 0.430 0.448 0.468 0.485 ANG 75.5 78.0 77.8 76.9 75.4 73.9 72.2 70.4 68.4 66.9 65.0 63.2 61.3 59.7 57.8 56.2 54.4 52.8 50.9 49.5 S22 MAG 0.353 0.199 0.153 0.135 0.127 0.124 0.125 0.126 0.128 0.131 0.136 0.140 0.144 0.149 0.153 0.159 0.163 0.170 0.174 0.180 ANG -77.7 -99.6 -112.5 -121.8 -128.3 -133.5 -138.0 -141.3 -145.0 -147.7 -150.3 -153.0 -155.6 -158.1 -160.5 -162.7 -165.1 -167.9 -170.2 -172.6 Rev.3.00, Oct.20.2003, page 7 of 9 2SC5631 S parameter (VCE = 5V, IC = 50 mA, Zo = 50 ) S11 f (MHz) MAG 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 0.205 0.193 0.190 0.193 0.201 0.206 0.206 0.221 0.224 0.234 0.243 0.249 0.261 0.270 0.280 0.285 0.298 0.312 0.321 0.330 ANG -123.9 -159.6 -177.1 169.9 162.0 153.7 145.4 139.0 132.6 126.8 120.8 116.8 111.3 107.4 103.5 99.1 95.4 91.8 87.9 85.6 S21 MAG 28.04 14.24 9.44 7.09 5.68 4.76 4.11 3.62 3.25 2.94 2.72 2.53 2.36 2.23 2.10 2.01 1.92 1.84 1.79 1.71 ANG 110.8 96.9 90.2 85.3 81.8 78.4 75.1 72.2 69.4 66.6 64.0 61.3 59.0 56.9 54.5 52.1 50.3 47.6 45.7 43.8 S12 MAG 0.0284 0.0547 0.0820 0.109 0.135 0.162 0.188 0.213 0.238 0.262 0.286 0.309 0.331 0.353 0.373 0.393 0.414 0.431 0.450 0.467 ANG 74.9 78.2 78.3 77.5 76.3 74.6 72.9 71.3 69.4 67.8 66.0 64.3 62.5 60.9 59.1 57.6 56.0 54.3 52.5 51.4 S22 MAG 0.360 0.197 0.145 0.123 0.112 0.107 0.105 0.105 0.106 0.110 0.113 0.117 0.120 0.125 0.129 0.135 0.139 0.145 0.148 0.155 ANG -69.1 -84.5 -92.5 -99.0 -104.1 -109.5 -113.7 -117.6 -121.8 -125.4 -128.7 -132.0 -135.5 -138.7 -142.0 -144.9 -148.1 -151.3 -154.5 -157.5 Rev.3.00, Oct.20.2003, page 8 of 9 2SC5631 Package Dimensions As of January, 2003 Unit: mm 4.5 0.1 1.5 1.5 3.0 0.8 Min 0.44 Max Package Code JEDEC JEITA Mass (reference value) (0.4) 0.53 Max 0.48 Max (2.5) 1 2.5 0.1 4.25 Max 0.4 1.8 Max 1.5 0.1 0.44 Max (1.5) UPAK -- Conforms 0.050 g Rev.3.00, Oct.20.2003, page 9 of 9 (0.2) Sales Strategic Planning Div. Keep safety first in your circuit designs! Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. 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