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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1173 DESCRIPTION With TO-220 package Complement to type 2SA473 Collector current :IC=3A Collector dissipation:PC=10W@TC=25ae APPLICATIONS Low frequency power amplifier Power regulator PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings (Ta=25ae ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER HAN INC Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Junction temperature Storage temperature SEM GE Open base CONDITIONS Open emitter OND IC TOR UC VALUE 30 30 5 3 UNIT V V V A W ae ae Open collector Collector power dissipation TC=25ae 10 150 -55~150 Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=10mA ;IB=0 IC=0.5mA ;IE=0 IE=1mA ;IC=0 IC=2A IB=0.2A IC=0.5A ; VCE=2V VCB=20V;IE=0 VEB=5V; IC=0 IC=0.5A ; VCE=2V IC=2.5A ; VCE=2V 70 25 MIN 30 30 5 TYP. 2SC1173 SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBE ICBO IEBO hFE-1 hFE-2 COB fT MAX UNIT V V V 0.8 1.0 1.0 1.0 240 |I |I V V A A Output capacitance ANG CH Y 120-240 Transition frequency hFE-1 classifications O 70-140 IN EMIC ES IC=0.5A ; VCE=2V IE=0; VCB=10V;f=1MHz OND TOR UC 35 100 pF MHz 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC1173 SEM GE HAN INC OND IC TOR UC Fig.2 outline dimensions (unindicated tolerance:A 0.10 mm) 3 |
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