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| New Product SUD50N04-37P Vishay Siliconix N-Channel 40-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 40 rDS(on) () 0.037 at VGS = 10 V 0.046 at VGS = 4.5 V ID (A)a 8 8 Qg (Typ.) 5.3 nC FEATURES * TrenchFET(R) Power MOSFET * 100 % UIS Tested RoHS COMPLIANT APPLICATIONS * Backlight Inverter for LCD Display * Full Bridge DC/DC Converter TO-252 D Drain Connected to Tab G D S G Top View Ordering Information: SUD50N04-37P-E3 (Lead (Pb)-free) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 C TC = 70 C TA = 25 C TA = 70 C TC = 25 C TA = 25 C L = 0.1 mH TC = 25 C TC = 70 C TA = 25 C TA = 70 C Symbol VDS VGS Limit 40 20 8a 8a 5.4b 4.4b 30 8a 1.6b 7 2.45 10.8 6.9 2.0b 1.3b - 55 to 150 mJ Unit V Continuous Drain Current (TJ = 150 C) ID IDM IS IAS EAS Pulsed Drain Current Continuous Source-Drain Diode Current Single Pulse Avalanche Current Avalanche Energy A Maximum Power Dissipation PD TJ, Tstg W Operating Junction and Storage Temperature Range C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb Maximum Junction-to-Case Notes: a. Package limited. b. Surface mounted on 1" x 1" FR4 board. Document Number: 69732 S-80109-Rev. B, 21-Jan-08 www.vishay.com 1 Steady State Steady State Symbol RthJA RthJC Typical 49 9.4 Maximum 60 11.5 Unit C/W New Product SUD50N04-37P Vishay Siliconix SPECIFICATIONS TJ = 25 C, unless otherwise noted Parameter Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea VDS VDS/TJ VGS(th)/TJ VGS(th) IGSS IDSS ID(on) rDS(on) gfs Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf td(on) tr td(off) tf IS ISM VSD trr Qrr ta tb IF = 2 A, di/dt = 100 A/s, TJ = 25 C IS = 2 A 0.805 19 14 13 6 TC = 25 C VDD = 20 V, RL = 4 ID 5 A, VGEN = 10 V, Rg = 1 VDD = 20 V, RL = 4 ID 5 A, VGEN = 4.5 V, Rg = 1 f = 1 MHz VDS = 20 V, VGS = 10 V, ID = 5 A VDS = 20 V, VGS = 4.5 V, ID = 5 A VDS = 20 V, VGS = 0 V, f = 1 MHz VGS = 0 V, ID = 1 mA ID = 250 A VDS = VGS, ID = 250 A VDS = 0 V, VGS = 20 V VDS = 40 V, VGS = 0 V VDS = 40 V, VGS = 0 V, TJ = 70 C VDS 5 V, VGS = 10 V VGS = 10 V, ID = 5 A VGS = 4.5 V, ID = 4 A VDS = 15 V, ID = 5 A 10 0.0305 0.037 22 640 73 41 11.7 5.3 1.9 1.7 2.2 18 14 14 10 9 11 14 8 30 25 25 20 18 20 25 18 8 30 1.2 30 25 ns 20 9 nC pF 0.037 0.046 1.4 40 44 - 5.5 2.5 100 1 20 V mV/C V nA A A S Symbol Test Conditions Min. Typ. Max. Unit Forward Transconductancea Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Currenta Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Fall Time Reverse Recovery Rise Time A V ns nC ns Notes: a. Pulse test; pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 69732 S-80109-Rev. B, 21-Jan-08 New Product SUD50N04-37P Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 30 VGS = 10 thru 5 V 4V 24 I D - Drain Current (A) I D - Drain Current (A) 4 5 18 3 TC = 25 C 2 12 6 3V 0 0.0 1 TC = 125 C 0 0.5 1.0 1.5 2.0 2.5 0 1 2 3 TC = - 55 C 4 5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics 0.060 800 Transfer Characteristics Ciss r DS(on) - On-Resistance () 0.052 C - Capacitance (pF) 640 0.044 VGS = 4.5 V 0.036 VGS = 10 V 0.028 480 320 Coss 160 Crss 0 6 12 18 24 30 0.020 0 6 12 18 24 30 0 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current 10 ID = 5 A VGS - Gate-to-Source Voltage (V) 8 r DS(on) - On-Resistance VDS = 20 V 6 VDS = 30 V 4 VDS = 10 V 1.8 ID = 5 A 1.6 Capacitance VGS = 10 V 1.4 (Normalized) VGS = 4.5 V 1.2 1.0 2 0.8 0 0.0 2.5 5.0 7.5 10.0 12.5 0.6 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (C) Gate Charge Document Number: 69732 S-80109-Rev. B, 21-Jan-08 On-Resistance vs. Junction Temperature www.vishay.com 3 New Product SUD50N04-37P Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 100 TJ = 150 C r DS(on) - On-Resistance () 10 I S - Source Current (A) TJ = 25 C 1 0.16 0.20 ID = 5 A 0.12 0.1 0.08 TA = 125 C 0.04 TA = 25 C 0.01 0.001 0.0 0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage 0.4 100 On-Resistance vs. Gate-to-Source Voltage 0.2 V GS(th) Variance (V) ID = 5 mA ID = 250 A 80 0.0 Power (W) - 25 0 25 50 75 100 125 150 60 - 0.2 40 - 0.4 20 - 0.6 - 0.8 - 50 0 0.0001 0.001 0.01 0.1 Time (s) 1 10 TJ - Temperature (C) Threshold Voltage 100 100 Single Pulse Power, Junction-to-Ambient 80 10 I D - Drain Current (A) Power (W) Limited by rDS(on)* 100 s 1 1 ms 10 ms 100 ms 0.1 10 s DC TA = 25 C Single Pulse 60 40 20 0 0.0001 0.001 0.01 Time (s) 0.1 1 0.01 0.01 0.1 1 10 100 Single Pulse Power, Junction-to-Case VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which rDS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 Document Number: 69732 S-80109-Rev. B, 21-Jan-08 New Product SUD50N04-37P Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 100 7 Limited by rDS(on)* I D - Drain Current (A) I D - Drain Current (A) 10 100 s 5 4 1 1 ms 10 ms 100 ms, DC 3 0.1 TC = 25 C Single Pulse 0.01 0.01 1 0 0.1 1 10 100 0 25 50 75 100 125 150 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which rDS(on) is specified TA - Ambient Temperature (C) Safe Operating Area, Junction-to-Case 15 2.5 Current Derating*, Junction-to-Ambient 12 I D - Drain Current (A) 2.0 6 Power (W) 75 100 125 150 9 Package Limited 1.5 1.0 3 0.5 0 0 25 50 0.0 0 25 50 75 100 125 150 TC - Case Temperature (C) TA - Ambient Temperature (C) Current Derating*, Junction-to-Case 15 Power Derating*, Junction-to-Ambient 12 Power (W) 9 6 3 * The power dissipation PD is based on TJ(max) = 175 C, using 0 0 25 50 75 100 125 150 junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www.vishay.com 5 TC - Case Temperature (C) Power Derating*, Junction-to-Case Document Number: 69732 S-80109-Rev. B, 21-Jan-08 New Product SUD50N04-37P Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 PDM t1 t2 1. Duty Cycle, D = t1 t2 Notes: 2. Per Unit Base = RthJA = 60 C/W 0.01 10 -4 Single Pulse 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) 10 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.05 0.02 Single Pulse 0.1 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?69732. www.vishay.com 6 Document Number: 69732 S-80109-Rev. B, 21-Jan-08 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1 |
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