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| Pb Free Plating Product ISSUED DATE :2005/03/01 REVISED DATE :2005/09/30B GSC4410 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 30V 13.5m 10A The GSC4410 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. *Dynamic dv/dt Rating *Simple Drive Requirement *Repetitive Avalanche Rated *Fast Switching Description Features Package Dimensions REF. A B C D E F Millimeter Min. Max. 5.80 4.80 3.80 0C 0.40 0.19 6.20 5.00 4.00 8C 0.90 0.25 REF. M H L J K G Millimeter Min. Max. 0.10 0.25 0.35 0.49 1.35 1.75 0.375 REF. 45 C 1.27 TYP. Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS@10V Continuous Drain Current, VGS@10V Pulsed Drain Current 1 Symbol VDS VGS ID @TA=25 : ID @TA=70 : IDM PD @TA=25 : Tj, Tstg Ratings 30 f 20 10 8 50 2.5 0.02 -55 ~ +150 Unit V V A A A W W/ Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Thermal Data Parameter Thermal Resistance Junction-ambient Max. Symbol Rthj-amb Value 50 Unit /W GSC4410 Page: 1/5 ISSUED DATE :2005/03/01 REVISED DATE :2005/09/30B Electrical Characteristics(Tj = 25 Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Unless otherwise specified) Min. 30 1.0 Typ. 0.037 20 11.5 16.5 20 3 11 7.5 10.2 29 33 955 555 204 Max. 3.0 D 100 1 25 13.5 20 pF ns nC Unit V V/ : V S nA uA uA mL Test Conditions VGS=0, ID=250uA Reference to 25 : , ID=1mA VDS=VGS, ID=250uA VDS=15V, ID=10A 20V VGS= D VDS=30V, VGS=0 VDS=24V, VGS=0 VGS=10V, ID=10A VGS=4.5V, ID=5A ID=10A VDS=15V VGS=5V VDS=25V ID=1A VGS=5V RG=3.3 L RD=25 L VGS=0V VDS=15V f=1.0MHz Symbol BVDSS BVDSS / Tj Gate Threshold Voltage Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj=25 : ) Drain-Source Leakage Current(Tj=55 : ) VGS(th) gfs IGSS IDSS Static Drain-Source On-Resistance Total Gate Charge2 Gate-Source Charge Gate-Drain ("Miller") Change Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance RDS(ON) Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss Source-Drain Diode Parameter Forward On Voltage 2 Symbol VSD IS ISM 1 Min. - Typ. - Max. 1.3 2.3 50 Unit V A A Test Conditions IS=2.3A, VGS=0V, Tj=25 : VD=VG=0V, VS=1.3V Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Notes: 1. Pulse width limited by safe operating area. 2. Pulse width 300us, duty cycle 2%. GSC4410 Page: 2/5 ISSUED DATE :2005/03/01 REVISED DATE :2005/09/30B Characteristics Curve Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Maximum Drain Current v.s. Case Temperature GSC4410 Fig 6. Type Power Dissipation Page: 3/5 ISSUED DATE :2005/03/01 REVISED DATE :2005/09/30B Fig 7. Maximum Safe Operating Area Fig 8. Effective Transient Thermal Impedance Fig 9. Gate Charge Characteristics Fig 10. Typical Capacitance Characteristics Fig 11. Forward Characteristics of Reverse Diode GSC4410 Fig 12. Gate Threshold Voltage v.s. Junction Temperature Page: 4/5 ISSUED DATE :2005/03/01 REVISED DATE :2005/09/30B Fig 13. Switching Time Circuit Fig 14. Switching Time Waveform Fig 15. Gate Charge Circuit Fig 16. Gate Charge Waveform Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 GSC4410 Page: 5/5 |
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