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 Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC5382
DESCRIPTION With TO-220F package High Voltage High speed switching
PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION
Absolute maximum ratings (Ta=25ae )
SYMBOL VCBO VCEO VEBO IC ICM IB IBM PT Tj Tstg
TOR NDU ICO E SEM ANG INCH
PARAMETER CONDITIONS VALUE 1200 550 9 Collector-base voltage Open emitter Collector-emitter voltage Open base Emitter-base voltage Open collector Collector current 6 Collector current-peak 12 3 6 TC=25ae 40 150 -55~150 Base current Base current-peak Total power dissipation Junction temperature Storage temperature
UNIT V V V A A A A W ae ae
THERMAL CHARACTERISTICS
SYMBOL Rth j-C PARAMETER Thermal resistance junction case MAX 3.13 UNIT ae /W
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25ae unless otherwise specified PARAMETER CONDITIONS MIN
2SC5382
SYMBOL
TYP.
MAX
UNIT
VCEO(SUS)
Collector-emitter sustaining voltage
IC=0.1A; IB=0
550
V
VCEsat
Collector-emitter saturation voltage
IC=3A; IB=0.6 A
1.0
V
VBEsat ICBO ICEO IEBO hFE-1
Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain
IC=3A; IB=0.6 A VCB=1200V; IE=0 VCE=550V; IB=0 VEB=9V; IC=0 IC=3A ; VCE=5V 10
1.5 0.1 0.1 0.1
V mA mA mA
hFE-2
Switching times ton ts tf
TOR NDU ICO E SEM ANG INCH
DC current gain IC=1mA ; VCE=5V 10 Turn-on time Storage time IC=3A;IB1=0.6A ;IB2=1.2A RL=50| ;VBB2=4V Fall time
1.3 4.0 |I
|I |I
s s s
0.3
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC5382
TOR NDU ICO E SEM ANG INCH
Fig.2 outline dimensions
3


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