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| SMD Type Silicon PNP Epitaxial 2SA1171 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors IC Unit: mm +0.1 2.4-0.1 Low frequency small signal amplifier +0.1 1.3-0.1 Features 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating -90 -90 -5 -50 150 150 -55 to +150 Unit V V V mA mW Electrical Characteristics Ta = 25 Parameter Collector to emitter breakdown voltage Collector cutoff current DC current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Gain bandwidth product Collector output capacitance Symbol Testconditons Min -90 -0.5 250 800 -0.75 -0.5 200 1.6 V V MHz pF Typ Max Unit V iA V(BR)CEO IC = -1 mA, RBE = ICBO hFE VBE VCB = -75 V, IE = 0 VCE = -12 V, IC = -2 mA VCE = -12 V, IC = -2 mA VCE(sat) IC = -10 mA, IB = -1 mA fT Cob VCE = -12 V, IC = -2 mA VCB = -25 V, IE = 0, f = 1 MHz hFE Classification Marking hFE PD 250 500 PE 400 800 +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1 |
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