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STB20NM50FD STF20NM50FD - STP20NM50FD N-channel 500 V, 0.22 20 A D2PAK, TO-220FP, TO-220 , FDmeshTM Power MOSFET (with fast diode) Features Type VDSS RDS(on) RDS(on)* Qg max ID 20 A 20 A 20 A STB20NM50FD 500 V < 0.25 8.36 * nC STF20NM50FD 500 V < 0.25 8.36 * nC STP20NM50FD 500 V < 0.25 8.36 * nC 3 1 2 1 3 2 High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Tight process control and high manufacturing yields TO-220FP 1 3 TO-220 DPAK Figure 1. Internal schematic diagram Application Switching applications Description The FDmeshTM associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode. It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters. Table 1. Device summary Marking B20NM50FD F20NM50FD P20NM50FD Package DPAK TO-220FP TO-220 Packaging Tape and reel Tube Tube Order codes STB20NM50FD STF20NM50FD STP20NM50FD April 2008 Rev 9 1/16/ www.st.com 16 Contents STB20NM50FD - STF20NM50FD - STP20NM50FD Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 4 5 6 Test circuit ................................................ 9 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 2/16 STB20NM50FD - STF20NM50FD - STP20NM50FD Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Value Symbol Parameter DPAK TO-220 VDS VGS ID ID IDM (2) PTOT dv/dt (3) VISO Tstg Tj Drain-source voltage (VGS=0) Gate-source voltage Drain current (continuous) at TC = 25 C Drain current (continuous) at TC = 100 C Drain current (pulsed) Total dissipation at TC = 25 C Peak diode recovery voltage slope Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1 s;TC=25 C) Storage temperature Operating junction temperature -20 14 80 192 20 2500 -65 to 150 150 500 30 20 (1) 14(1) 80(1) 45 Unit TO-220FP V V A A A W V/ns V C C 1. Limited only by maximum temperature allowed 2. Pulse width limited by safe operating area 3. ISD 20 A, di/dt 200 A/s, VDD = 80% V(BR)DSS Table 3. Symbol Rthj-case Rthj-amb Rthj-pcb Tl Thermal data Parameter Thermal resistance junction-case max Thermal resistance junction-amb max Thermal resistance junction-pcb max Maximum lead temperature for soldering purposes 62.5 -TO-220 0.65 -30 300 DPAK TO-220FP 2.8 62.5 -Unit C/W C/W C/W C Table 4. Symbol IAS EAS Avalanche characteristics Parameter Avalanche current, repetitive or not-repetitive (pulse width limited by Tj max) Single pulse avalanche energy (starting Tj = 25 C, ID = IAS, VDD = 35 V) Max value 10 700 Unit A mJ 3/16 Electrical characteristics STB20NM50FD - STF20NM50FD - STP20NM50FD 2 Electrical characteristics (TCASE=25C unless otherwise specified) Table 5. Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on) On/off states Parameter Drain-source breakdown voltage Zero gate voltage drain current (VGS = 0) Gate body leakage current (VDS = 0) Gate threshold voltage Static drain-source on resistance Test conditions ID = 250 A, VGS= 0 VDS = Max rating, VDS = Max rating,@125 C VGS = 30 V VDS= VGS, ID = 250 A VGS= 10 V, ID= 10 A 3 4 0.22 Min. 500 1 10 100 5 0.25 Typ. Max. Unit V A A nA V Table 6. Symbol gfs(1) Ciss Coss Crss Coss eq.(2) Dynamic Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Equivalent output capacitance Gate input resistance Test conditions VDS > ID(on) x RDS(on)max, ID= 10 A VDS = 25V, f =1 MHz, VGS = 0 Min. Typ. 9 1380 290 40 130 Max. Unit S pF pF pF pF VGS = 0, VDS = 0 to 400 V f=1 MHz Gate DC Bias=0 Test signal level=20 mV open drain VDD = 400 V, ID = 20 A VGS = 10 V (see Figure 16) Rg 2.8 53 nC nC nC Qg Qgs Qgd 1. Total gate charge Gate-source charge Gate-drain charge 38 18 10 Pulsed: pulse duration = 300 s, duty cycle 1.5% 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 4/16 STB20NM50FD - STF20NM50FD - STP20NM50FD Electrical characteristics Table 7. Symbol td(on) tr tr(Voff) tf tc Switching times Parameter Turn-on delay time Rise time Off-voltage rise time Fall time Cross-over time Test conditions VDD = 250 V, ID = 10 A, RG = 4.7 , VGS = 10 V (see Figure 15) VDD = 400 V, ID = 20 A, RG = 4.7 , VGS = 10 V (see Figure 15) Min Typ 22 20 6 15 30 Max Unit ns ns ns ns ns Table 8. Symbol ISD ISDM (1) VSD(2) trr Qrr IRRM 2. Source drain diode Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 20 A, VGS=0 ISD =20 A, di/dt =100 A/s, VDD = 60 V, TJ=150 C (see Figure 17) 245 2 16 Test conditions Min Typ Max 20 80 1.5 Unit A A V ns nC A 1. Pulse width limited by safe operating area Pulsed: pulse duration = 300 s, duty cycle 1.5% 5/16 Electrical characteristics STB20NM50FD - STF20NM50FD - STP20NM50FD 2.1 Figure 2. Electrical characteristics (curves) Safe operating area for TO-220 / DPAK Figure 3. Thermal impedance for TO-220 / DPAK Figure 4. Safe operating area for TO-220FP Figure 5. Thermal impedance for TO-220FP Figure 6. Output characteristics Figure 7. Transfer characteristics 6/16 STB20NM50FD - STF20NM50FD - STP20NM50FD Figure 8. Transconductance Figure 9. Electrical characteristics Static drain-source on resistance Figure 10. Gate charge vs gate-source voltage Figure 11. Capacitance variations Figure 12. Normalized gate threshold voltage vs temperature Figure 13. Normalized on resistance vs temperature 7/16 Electrical characteristics Figure 14. Source-drain diode forward characteristics STB20NM50FD - STF20NM50FD - STP20NM50FD 8/16 STB20NM50FD - STF20NM50FD - STP20NM50FD Test circuit 3 Test circuit Figure 16. Gate charge test circuit Figure 15. Switching times test circuit for resistive load Figure 17. Test circuit for inductive load Figure 18. Unclamped Inductive load test switching and diode recovery times circuit Figure 19. Unclamped inductive waveform Figure 20. Switching time waveform 9/16 Package mechanical data STB20NM50FD - STF20NM50FD - STP20NM50FD 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 10/16 STB20NM50FD - STF20NM50FD - STP20NM50FD Package mechanical data TO-220 mechanical data mm Dim Min A b b1 c D D1 E e e1 F H1 J1 L L1 L20 L30 P Q 4.40 0.61 1.14 0.48 15.25 1.27 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 Typ Max 4.60 0.88 1.70 0.70 15.75 Min 0.173 0.024 0.044 0.019 0.6 inch Typ Max 0.181 0.034 0.066 0.027 0.62 0.050 0.409 0.106 0.202 0.051 0.256 0.107 0.551 0.154 0.645 1.137 0.151 0.116 11/16 Package mechanical data STB20NM50FD - STF20NM50FD - STP20NM50FD TO-220FP mechanical data Dim. A B D E F F1 F2 G G1 H L2 L3 L4 L5 L6 L7 Dia 28.6 9.80 2.9 15.90 9 3 mm. Min. 4.40 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.40 10 16 30.6 10.60 3.6 16.40 9.30 3.2 1.126 0.385 0.114 0.626 0.354 0.118 Typ Max. 4.60 2.7 2.75 0.70 1.00 1.50 1.50 5.20 2.70 10.40 Min. 0.173 0.098 0.098 0.017 0.030 0.045 0.045 0.195 0.094 0.393 0.630 1.204 0.417 0.141 0.645 0.366 0.126 inch Typ. Max. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409 A B L3 L6 L7 Dia F1 D F G1 H F2 L2 L5 E 123 L4 7012510-I 12/16 G STB20NM50FD - STF20NM50FD - STP20NM50FD Package mechanical data DPAK (TO-263) mechanical data mm Dim Min A A1 b b2 c c2 D D1 E E1 e e1 H J1 L L1 L2 R V2 4.40 0.03 0.70 1.14 0.45 1.23 8.95 7.50 10 8.50 2.54 4.88 15 2.49 2.29 1.27 1.30 0.4 0 8 0 5.28 15.85 2.69 2.79 1.40 1.75 0.192 0.590 0.099 0.090 0.05 0.051 Typ Max 4.60 0.23 0.93 1.70 0.60 1.36 9.35 10.40 Min 0.173 0.001 0.027 0.045 0.017 0.048 0.352 0.295 0.394 0.334 inch Typ Max 0.181 0.009 0.037 0.067 0.024 0.053 0.368 0.409 0.1 0.208 0.624 0.106 0.110 0.055 0.069 0.016 8 0079457_M 13/16 Packaging mechanical data STB20NM50FD - STF20NM50FD - STP20NM50FD 5 Packaging mechanical data D2PAK FOOTPRINT TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. A B C D G N T 1.5 12.8 20.2 24.4 100 30.4 26.4 13.2 mm MIN. MAX. 330 0.059 0.504 0.520 0795 0.960 1.039 3.937 1.197 BULK QTY 1000 inch MIN. MAX. 12.992 TAPE MECHANICAL DATA DIM. A0 B0 D D1 E F K0 P0 P1 P2 R T W mm MIN. 10.5 15.7 1.5 1.59 1.65 11.4 4.8 3.9 11.9 1.9 50 0.25 23.7 24.3 MAX. 10.7 15.9 1.6 1.61 1.85 11.6 5.0 4.1 12.1 2.1 inch MIN. MAX. 0.413 0.421 0.618 0.626 0.059 0.063 0.062 0.063 0.065 0.073 0.449 0.456 0.189 0.197 0.153 0.161 0.468 0.476 0.075 0.082 1.574 0.35 0.0098 0.0137 0.933 0.956 BASE QTY 1000 * on sales type 14/16 STB20NM50FD - STF20NM50FD - STP20NM50FD Revision history 6 Revision history Table 9. Date 21-Jun-2004 21-Apr-2008 Document revision history Revision 8 9 Figure 4: Safe operating area for TO-220FP and Figure 5: Thermal impedance for TO-220FP added. Changes 15/16 STB20NM50FD - STF20NM50FD - STP20NM50FD Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST's terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST'S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER'S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. (c) 2008 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 16/16 |
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