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| FUJITSU SEMICONDUCTOR INTRODUCTION SHEET NP05-11453-1E 64 Mbit SDR I/F Consumer FCRAM Consumer Embedded Application Specific Memory MB81ES641645A-07 FEATURES * * * * * * * * * * TM SDRAM Interface 1 M word x 16 bit x 4 bank organization 1.8 V Low Power Supply (VDD = VDDQ) 4K Refresh Cycle every 64ms Auto- and Self-Refresh Burst Read / Burst Write and Burst Read / Single Write Operation Capability Programmable Partial Array Self Refresh (PASR) Programmable Driver Strength (DS) Deep Power Down Mode CKE Power Down Mode MAIN SPECIFICATIONS Part Number Organization Supply Voltage (VDD = VDDQ) Clock Frequency (Max.) CL2 CL3 Clock Period (tCK) (Min.) Access Time from Clock (tAC) (Max.) Operating Current (Max.) Standby Current (Power Down Mode) (Max.) Self Refresh Current (Max.) CL2 CL3 CL2 CL3 MB81ES641645A-07 1 M Word x 16 bit x 4 bank 1.7 V to 1.95 V 81 MHz 135 MHz 12.3 ns 7.4 ns 9 ns 6.5 ns T.B.D. T.B.D. T.B.D. Note: FCRAM is a trademark of Fujitsu Limited, Japan. July, 2007 1/1 Copyright(c)2007 FUJITSU LIMITED All rights reserved |
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