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FDP18N20F / FDPF18N20F N-Channel MOSFET
November 2007
FDP18N20F / FDPF18N20F
N-Channel MOSFET, FRFET
200V, 18A, 0.145 Features
* RDS(on) = 0.12 ( Typ.)@ VGS = 10V, ID = 9A * Low gate charge ( Typ. 20nC) * Low Crss ( Typ. 24pF) * Fast switching * 100% avalanche tested * Improve dv/dt capability * RoHS compliant
UniFETTM
tm
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switching mode power supplies and active power factor correction.
D
G GDS
TO-220 FDP Series
GD S
TO-220F FDPF Series
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted
Symbol VDSS VGSS ID IDM EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25oC) - Derate above 25oC -Continuous (TC = 25oC) -Continuous (TC = 100oC) - Pulsed (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) 100 0.83 -55 to +150 300 18 10.8 72 324 18 10 4.5 35 0.27 FDP18N20F FDPF18N20F 200 30 18* 10.8* 72* Units V V A A mJ A mJ V/ns W W/oC
o o
Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8" from Case for 5 Seconds
C C
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol RJC RCS RJA Parameter Thermal Resistance, Junction to Case Thermal Resistance, Case to Sink Typ. Thermal Resistance, Junction to Ambient FDP18N20F FDPF18N20F 1.2 0.5 62.5 3.6 62.5
o
Units C/W
(c)2007 Fairchild Semiconductor Corporation FDP18N20F / FDPF18N20F Rev. A
1
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FDP18N20F / FDPF18N20F N-Channel MOSFET
Package Marking and Ordering Information TC = 25oC unless otherwise noted
Device Marking FDP18N20F FDPF18N20F Device FDP18N20F FDPF18N20F Package TO-220 TO-220F Reel Size Tape Width Quantity 50 50
Electrical Characteristics
Symbol Parameter Test Conditions Min. Typ. Max. Units
Off Characteristics
BVDSS BVDSS / TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Body Leakage Current ID = 250A, VGS = 0V, TJ = 25oC ID = 250A, Referenced to VDS = 200V, VGS = 0V VDS = 160V, TC = 125oC VGS = 30V, VDS = 0V 25oC 200 0.2 10 100 100 V V/oC A nA
On Characteristics
VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 250A VGS = 10V, ID = 9A VDS = 20V, ID = 9A
(Note 4)
3.0 -
0.12 13.6
5.0 0.145 -
V S
Dynamic Characteristics
Ciss Coss Crss Qg(tot) Qgs Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge at 10V Gate to Source Gate Charge Gate to Drain "Miller" Charge VDS = 160V, ID = 18A VGS = 10V
(Note 4, 5)
VDS = 25V, VGS = 0V f = 1MHz
-
885 200 24 20 5 9
1180 270 35 26 -
pF pF pF nC nC nC
Switching Characteristics
td(on) tr td(off) tf Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time VDD = 100V, ID = 18A RG = 25
(Note 4, 5)
-
16 50 50 40
40 110 110 90
ns ns ns ns
Drain-Source Diode Characteristics
IS ISM VSD trr Qrr Maximum Continuous Drain to Source Diode Forward Current Maximum Pulsed Drain to Source Diode Forward Current Drain to Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, ISD = 18A VGS = 0V, ISD = 18A dIF/dt = 100A/s
(Note 4)
-
80 240
18 72 1.5 -
A A V ns nC
Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 2mH, IAS = 18A, VDD = 50V, RG = 25, Starting TJ = 25C 3. ISD 18A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test: Pulse width 300s, Duty Cycle 2% 5. Essentially Independent of Operating Temperature Typical Characteristics
FDP18N20F / FDPF18N20F Rev. A
2
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FDP18N20F / FDPF18N20F N-Channel MOSFET
Typical Performance Characteristics
Figure 1. On-Region Characteristics
50
VGS = 10.0V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V
Figure 2. Transfer Characteristics
30
ID,Drain Current[A]
ID,Drain Current[A]
10
10
150 C 25 C
o
o
1
*Notes: 1. 250s Pulse Test 2. TC = 25 C
o
*Notes: 1. VDS = 20V 2. 250s Pulse Test
1 0.1 1 VDS,Drain-Source Voltage[V] 10 4 5 6 VGS,Gate-Source Voltage[V] 7
Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage
0.25
Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature
100
RDS(ON) [], Drain-Source On-Resistance
IS, Reverse Drain Current [A]
150 C
o
o
0.20
VGS = 10V
25 C
10
0.15
VGS = 20V
*Note: TJ = 25 C
o
*Notes: 1. VGS = 0V
2. 250s Pulse Test
0.10 0 10 20 30 ID, Drain Current [A] 40 50
1 0.0
0.4 0.8 1.2 1.6 VSD, Body Diode Forward Voltage [V]
2.0
Figure 5. Capacitance Characteristics
2000
Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd
Figure 6. Gate Charge Characteristics
10
VGS, Gate-Source Voltage [V]
VDS = 40V VDS = 100V VDS = 160V
8
1500
Capacitances [pF]
*Note: 1. VGS = 0V 2. f = 1MHz Ciss
6
1000
4
Coss
500
Crss
2
*Note: ID = 18A
0 0.1
0
1 10 VDS, Drain-Source Voltage [V]
30
0
6 12 18 Qg, Total Gate Charge [nC]
24
FDP18N20F / FDPF18N20F Rev. A
3
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FDP18N20F / FDPF18N20F N-Channel MOSFET
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation vs. Temperature
1.2 BVDSS, [Normalized] Drain-Source Breakdown Voltage
Figure 8. Maximum Safe Operating Area - FDP18N20F
100
20s 100s
ID, Drain Current [A]
1.1
10
1ms
1.0
1
Operation in This Area is Limited by R DS(on)
10ms DC
0.9
*Notes: 1. VGS = 0V 2. ID = 250A
0.1
*Notes: 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse
o o
0.8 -100
0.01
-50 0 50 100 150 o TJ, Junction Temperature [ C]
200
1
10 100 VDS, Drain-Source Voltage [V]
600
Figure 9. Maximum Drain Current vs. Case Temperature
20
16
ID, Drain Current [A]
12
8
4
0 25
50 75 100 125 o TC, Case Temperature [ C]
150
Figure 10. Transient Thermal Response Curve - FDP18N20F
2
1
Thermal Response [ZJC]
0.5 0.2
0.1
PDM t1 t2
0.1 0.05 0.02 0.01
*Notes: 1. ZJC(t) = 3.0 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZJC(t)
o
0.01
Single pulse
10
-5
10
-4
10 10 10 1 Rectangular Pulse Duration [sec]
-3
-2
-1
10
10
2
FDP18N20F / FDPF18N20F Rev. A
4
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FDP18N20F / FDPF18N20F N-Channel MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FDP18N20F / FDPF18N20F Rev. A
5
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FDP18N20F / FDPF18N20F N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+ V
DS
_ I
SD
L D r iv e r R
G
S am e T ype as DUT
V
DD
V
GS
* d v / d t c o n t r o lle d b y R G * I S D c o n t r o lle d b y p u ls e p e r io d
V GS ( D r iv e r )
G a t e P u ls e W id th D = -------------------------G a te P u ls e P e r io d
10V
I F M , B o d y D io d e F o r w a r d C u r r e n t
I SD (DUT ) IR M
d i/ d t
B o d y D io d e R e v e r s e C u r r e n t
V DS (DUT )
B o d y D io d e R e c o v e r y d v / d t
V
SD
V
DD
B o d y D io d e F o r w a r d V o lt a g e D r o p
FDP18N20F / FDPF18N20F Rev. A
6
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FDP18N20F / FDPF18N20F N-Channel MOSFET
Mechanical Dimensions
TO-220
FDP18N20F / FDPF18N20F Rev. A
7
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FDP18N20F / FDPF18N20F N-Channel MOSFET
Mechanical Dimensions
TO-220F
3.30 0.10
10.16 0.20 (7.00)
o3.18 0.10
2.54 0.20 (0.70)
6.68 0.20
15.80 0.20
(1.00x45)
9.75 0.30
MAX1.47 0.80 0.10
(3 ) 0
0.35 0.10 2.54TYP [2.54 0.20]
#1 0.50 -0.05 2.54TYP [2.54 0.20]
4.70 0.20
+0.10
2.76 0.20
9.40 0.20
Dimensions in Millimeters
15.87 0.20
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FDP18N20F / FDPF18N20F Rev. A
8
FDP18N20F / FDPF18N20F N-Channel MOSFET
TRADEMARKS
The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx(R) Build it NowTM CorePLUSTM CROSSVOLTTM CTLTM Current Transfer LogicTM EcoSPARK(R)
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Power247(R) POWEREDGE(R) Power-SPMTM PowerTrench(R) Programmable Active DroopTM QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM SMART STARTTM SPM(R) STEALTHTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6
SuperSOTTM-8 SyncFETTM The Power Franchise(R)
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LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition
This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.
tm
Rev. I31
Preliminary
First Production
This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor. The datasheet is printed for reference information only.
No Identification Needed
Full Production
Obsolete
Not In Production
9 FDP18N20F / FDPF18N20F Rev. A
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