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FDP12N35 / FDPF12N35 350V N-Channel MOSFET
UniFET
FDP12N35 / FDPF12N35
350V N-Channel MOSFET
Features
* * * * * 12A, 350V, RDS(on) = 0.38 @VGS = 10 V Low gate charge ( typical 18 nC) Low Crss ( typical 15 pF) Fast switching Improved dv/dt capability
April 2007
TM
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction.
D
G GDS
TO-220
FDP Series
GD S
TO-220F
FDPF Series
S
Absolute Maximum Ratings
Symbol
VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current Gate-Source voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25C) - Derate above 25C
(Note 2) (Note 1) (Note 1) (Note 3)
Parameter
- Continuous (TC = 25C) - Continuous (TC = 100C) - Pulsed
(Note 1)
FDP12N35
12 7.2 48
FDPF12N35
350 12* 7.2* 48*
Unit
V A A A V mJ A mJ V/ns
30 335 12 13.5 4.5 135 1.09 -55 to +150 300 31.3 0.25
W W/C C C
Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8" from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
RJC RCS RJA
Parameter
Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Typ. Thermal Resistance, Junction-to-Ambient
FDP12N35
0.92 0.5 62.5
FDPF12N35
4.0 -62.5
Unit
C/W C/W C/W
(c)2007 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
FDP12N35 / FDPF12N35 Rev. B
FDP12N35 / FDPF12N35 350V N-Channel MOSFET
Package Marking and Ordering Information
Device Marking
FDP12N35 FDPF12N35
Device
FDP12N35 FDPF12N35
Package
TO-220 TO-220F
TC = 25C unless otherwise noted
Reel Size
-
Tape Width
-
Quantity
50 50
Electrical Characteristics
Symbol
Off Characteristics BVDSS BVDSS / TJ IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS ISM VSD trr Qrr
Notes:
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
Conditions
VGS = 0V, ID = 250A, TJ = 25C ID = 250A, Referenced to 25C VDS = 350V, VGS = 0V VDS = 280V, TC = 125C VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V VDS = VGS, ID = 250A VGS = 10V, ID = 6A VDS = 40V, ID = 6A VDS = 25V, VGS = 0V, f = 1.0MHz
(Note 4)
Min
350 -----3.0 ------
Typ
-0.35 -----0.32 13 855 135 15 30 180 35 60 18 5 8 ---270 2.3
Max Units
--1 10 100 -100 5.0 0.38 -1110 175 25 70 370 80 130 25 --12 48 1.4 --V V/C A A nA nA V S pF pF pF ns ns ns ns nC nC nC A A V ns C
On Characteristics
Dynamic Characteristics
Switching Characteristics VDD = 175V, ID = 12A RG = 25
(Note 4, 5)
------(Note 4, 5)
VDS = 280V, ID = 12A VGS = 10V
------
Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, IS = 12A VGS = 0V, IS = 12A dIF/dt =100A/s
(Note 4)
--
1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 4mH, IAS = 12A, VDD = 50V, RG = 25, Starting TJ = 25C 3. ISD 12A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test: Pulse width 300s, Duty Cycle 2% 5. Essentially Independent of Operating Temperature Typical Characteristics
FDP12N35 / FDPF12N35 Rev. B
2
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FDP12N35 / FDPF12N35 350V N-Channel MOSFET
Typical Performance Characteristics
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
VGS Top : 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V
10
1
ID, Drain Current [A]
ID, Drain Current [A]
10
1
150 C
o
o
10
0
25 C
-55 C
* Notes : 1. VDS = 40V 2. 250s Pulse Test
o
* Notes : 1. 250s Pulse Test 2. TC = 25 C
o
10
-1
10
-1
10
0
10
1
10
0
2
4
6
8
10
12
VDS, Drain-Source Voltage [V]
VGS, Gate-Source Voltage [V]
Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue
10
2
1.2
RDS(ON) [], Drain-Source On-Resistance
1.0
0.8
VGS = 10V
IDR, Reverse Drain Current [A]
10
1
0.6
0.4
VGS = 20V
150 C 25 C
* Notes : 1. VGS = 0V 2. 250s Pulse Test
o
o
0.2 0 5 10 15 20 25
* Note : TJ = 25 C
o
30
35
10
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
ID, Drain Current [A]
VSD, Source-Drain voltage [V]
Figure 5. Capacitance Characteristics
1800
Ciss = Cgs + Cgd (Cds = shorted)
Figure 6. Gate Charge Characteristics
12
1600 1400
Crss = Cgd
VGS, Gate-Source Voltage [V]
Coss = Cds + Cgd
10
VDS = 70V VDS = 175V VDS = 280V
Coss Ciss
8
Capacitances [pF]
1200 1000 800 600 400 200 0 -1 10
6
4
Crss
* Note : 1. VGS = 0 V 2. f = 1 MHz
2
* Note : ID = 12A
0
10
0
10
1
0
2
4
6
8
10
12
14
16
18
20
VDS, Drain-Source Voltage [V]
QG, Total Gate Charge [nC]
FDP12N35 / FDPF12N35 Rev. B
3
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FDP12N35 / FDPF12N35 350V N-Channel MOSFET
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation vs. Temperature
1.2
Figure 8. On-Resistance Variation vs. Temperature
3.0
BVDSS, (Normalized) Drain-Source Breakdown Voltage
1.1
RDS(ON), (Normalized) Drain-Source On-Resistance
2.5
2.0
1.0
1.5
1.0
* Notes : 1. VGS = 10 V 2. ID = 6 A
0.9
* Notes : 1. VGS = 0 V 2. ID = 250 A
0.5
0.8 -100
-50
0
50
100
o
150
200
0.0 -100
-50
0
50
100
o
150
200
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
Figure 9-1. Maximum Safe Operating Area for FDP12N35
Figure 9-2. Maximum Safe Operating Area for FDPF12N35
10
2
10
2
10 s 100 s
10 s
ID, Drain Current [A]
10
1 ms 10 ms 100 ms
ID, Drain Current [A]
1
10
1
100 s 1 ms 10 ms 100 ms DC
10
0
Operation in This Area is Limited by R DS(on)
DC
10
0
Operation in This Area is Limited by R DS(on)
10
-1
* Notes : o 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse
o
10
-1
* Notes : o 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse
o
10
-2
10
0
10
1
10
2
10
-2
10
0
10
1
10
2
VDS, Drain-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 10. Maximum Drain Current vs. Case Temperature
15
ID, Drain Current [A]
10
5
0 25
50
75
100
o
125
150
TC, Case Temperature [ C]
FDP12N35 / FDPF12N35 Rev. B
4
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FDP12N35 / FDPF12N35 350V N-Channel MOSFET
Typical Performance Characteristics (Continued)
Figure 11-1. Transient Thermal Response Curve for FDP12N35
10
0
ZJC(t), Thermal Response
D=0.5 0.2
10
-1
0.1 0.05 0.02 0.01
PDM t1
* Notes : 1. Z JC (t) = 0.92 C /W Max. 2. D uty Factor, D =t 1 /t 2
o
t2
10
-2
single pulse
3. T JM - T C = P DM * Z JC (t)
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t 1, Square W ave Pulse Duration [sec]
Figure 11-2. Transient Thermal Response Curve for FDPF12N35
D=0.5
ZJC(t), Thermal Response
10
0
0.2 0.1 0.05
PDM t1 t2
10
-1
0.02 0.01
* Notes : 0 1. Z JC(t) = 4.0 C/W Max. 2. Duty Factor, D=t1/t2
single pulse
10
-2 -5 -4 -3 -2
3. T JM - T C = P DM * ZJC(t)
10
10
10
10
10
-1
10
0
10
1
t1, Square Wave Pulse Duration [sec]
FDP12N35 / FDPF12N35 Rev. B
5
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FDP12N35 / FDPF12N35 350V N-Channel MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FDP12N35 / FDPF12N35 Rev. B
6
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FDP12N35 / FDPF12N35 350V N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
FDP12N35 / FDPF12N35 Rev. B
7
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FDP12N35 / FDPF12N35 350V N-Channel MOSFET
Mechanical Dimensions
TO-220
Dimensions in Millimeters
FDP12N35 / FDPF12N35 Rev. B
8
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FDP12N35 / FDPF12N35 350V N-Channel MOSFET
Mechanical Dimensions
(Continued)
TO-220F
3.30 0.10 10.16 0.20 (7.00) o3.18 0.10 2.54 0.20 (0.70)
6.68 0.20
15.80 0.20
(1.00x45)
MAX1.47 9.75 0.30 0.80 0.10
(3 ) 0
0.35 0.10 2.54TYP [2.54 0.20]
#1 2.54TYP [2.54 0.20] 4.70 0.20
0.50 -0.05
+0.10
2.76 0.20
9.40 0.20
Dimensions in Millimeters
FDP12N35 / FDPF12N35 Rev. B
9
15.87 0.20
www.fairchildsemi.com
FDP12N35 / FDPF12N35 350V N-Channel MOSFET
tm
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PRODUCT STATUS DEFINITIONS Definition of Terms
2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
Datasheet Identification Advance Information Preliminary
Product Status Formative or In Design First Production
Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor.The datasheet is printed for reference information only.
Rev. I26
No Identification Needed
Full Production
Obsolete
Not In Production
10 FDP12N35 / FDPF12N35 Rev. B
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